IXTA3N60P

IXTY3N60P IXTA3N60P IXTP3N60P PolarTM Power MOSFET VDSS ID25 RDS(on) = 600V = 3A  2.9  N-Channel Enhancement Mode Avalanche Rated TO-252 (IXTY) G S D (Tab) TO-263 (IXTA) Symbol Test Conditions Maximum Ratings VDSS TJ = 25C to 150C 600 V VDGR TJ = 25C to 150C, RGS = 1M 600 V VGSS Continuous 30 V VGSM Transient 40 V ID25 TC = 25C 3 A IDM TC = 25C, Pulse Width Limited by TJM 6 A IA TC = 25C 3 A EAS TC = 25C 100 mJ dv/dt IS  IDM, VDD  VDSS, TJ  150°C 5 V/ns PD TC = 25C 70 W -55 ... +150 C TJM 150 C Tstg -55 ... +150 C 300 260 °C °C 10..65 / 2.2..14.6 1.13 / 10 N/lb Nm/lb.in 0.35 2.50 3.00 g g g TJ TL TSOLD Maximum Lead Temperature for Soldering 1.6 mm (0.062in.) from Case for 10s FC Md Mounting Force (TO-263) Mounting Torque (TO-220) Weight TO-252 TO-263 TO-220 G S D (Tab) TO-220 (IXTP) GD G = Gate S = Source Characteristic Values Min. Typ. Max. BVDSS VGS = 0V, ID = 250μA 600 VGS(th) VDS = VGS, ID = 50μA 3.0 5.5 D (Tab) D = Drain Tab = Drain Features      International Standard Packages Low QG Avalanche Rated Low Package Inductance Fast Intrinsic Rectifier Advantages  Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) S   High Power Density Easy to Mount Space Savings V Applications V  DC-DC Converters Switch-Mode and Resonant-Mode Power Supplies  AC and DC Motor Drives   Discharge Circiuts in Lasers, Spark Igniters, RF Generators  High Voltage Pulse Power Applications  IGSS VGS = 30V, VDS = 0V 100 nA IDSS VDS = VDSS, VGS = 0V RDS(on) VGS = 10V, ID = 0.5 • ID25, Note 1 TJ = 125C © 2017 IXYS CORPORATION, All Rights Reserved 5 A 50 A 2.9  DS99449F(6/17) IXTY3N60P Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max gfs 2.2 VDS = 20V, ID = 0.5 • ID25, Note 1 3.4 S 411 pF 44 pF Crss 6.4 pF Qg(on) 9.8 nC 3.4 nC 3.5 nC 25 ns 25 ns 58 ns 22 ns Ciss Coss Qgs VGS = 0V, VDS = 25V, f = 1MHz VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 Qgd td(on) tr td(off) tf Resistive Switching Times VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 RG = 30 (External) 1.8 C/W RthJC RthCS IXTA3N60P IXTP3N60P TO-220 C/W 0.50 Source-Drain Diode Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max IS VGS = 0V 3 A ISM Repetitive, Pulse Width Limited by TJM 9 A VSD IF = IS, VGS = 0V, Note 1 1.5 V trr IF = 3A, -di/dt = 100A/μs, VR = 100V 500 ns Note 1. Pulse test, t  300s, duty cycle, d 2%. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,860,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123B1 6,306,728B1 6,404,065B1 6,534,343 6,583,505 6,683,344 6,710,405B2 6,710,463 6,727,585 7,005,734B2 6,759,692 7,063,975B2 6,771,478B2 7,071,537 7,157,338B2 IXTY3N60P o o Fig. 2. Extended Output Characteristics @ TJ = 25 C Fig. 1. Output Characteristics @ TJ = 25 C 3.0 6 VGS = 10V 8V 2.5 VGS = 10V 8V 5 7V 2.0 7V 4 I D - Amperes I D - Amperes IXTA3N60P IXTP3N60P 1.5 1.0 3 2 6V 0.5 1 0.0 6V 0 0 1 2 3 4 5 6 7 8 9 10 0 5 10 VDS - Volts 3.2 3.0 VGS = 10V 7V 25 30 6V 1.5 1.0 0.5 VGS = 10V 2.8 RDS(on) - Normalized I D - Amperes 2.0 I D = 3A 2.4 2.0 I D = 1.5A 1.6 1.2 0.8 5V 0.4 0.0 0 2 4 6 8 10 12 14 16 18 -50 20 -25 0 VDS - Volts 50 75 100 125 150 Fig. 6. Maximum Drain Current vs. Case Temperature 3.5 VGS = 10V 3.0 o TJ = 125 C 2.5 25 TJ - Degrees Centigrade Fig. 5. RDS(on) Normalized to ID = 1.5A Value vs. Drain Current 3.0 2.5 I D - Amperes RDS(on) - Normalized 20 Fig. 4. RDS(on) Normalized to ID = 1.5A Value vs. Junction Temperature o Fig. 3. Output Characteristics @ TJ = 125 C 2.5 15 VDS - Volts 2.0 o TJ = 25 C 1.5 2.0 1.5 1.0 1.0 0.5 0.0 0.5 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 I D - Amperes © 2017 IXYS CORPORATION, All Rights Reserved 4.5 5.0 5.5 6.0 -50 -25 0 25 50 75 TC - Degrees Centigrade 100 125 150 IXTY3N60P IXTA3N60P IXTP3N60P Fig. 8. Transconductance Fig. 7. Input Admittance 7 5.0 o 4.5 VDS = 10V TJ = - 40 C VDS = 10V 6 4.0 5 g f s - Siemens I D - Amperes 3.5 3.0 2.5 o TJ = 125 C 2.0 o 25 C 1.5 o 25 C 4 o 125 C 3 2 o - 40 C 1.0 1 0.5 0 0.0 4.0 4.5 5.0 5.5 6.0 6.5 0 7.0 0.5 1 1.5 2 9 10 8 9 3.5 4 4.5 5 7 8 9 10 VDS = 300V I D = 1.5A 8 7 I G = 10mA 7 V GS - Volts 6 I S - Amperes 3 Fig. 10. Gate Charge Fig. 9. Forward Voltage Drop of Intrinsic Diode 5 4 6 5 4 o TJ = 125 C 3 3 o TJ = 25 C 2 2 1 1 0 0 0.4 0.5 0.6 0.7 0.8 0.9 0 1.0 1 2 VSD - Volts 3 4 5 6 QG - NanoCoulombs Fig. 11. Capacitance Fig. 12. Forward-Bias Safe Operating Area 10 1,000 RDS(on) Limit Ciss 25μs 100 I D - Amperes Capacitance - PicoFarads 2.5 I D - Amperes VGS - Volts Coss 100μs 1 1ms 10 DC o TJ = 150 C Crss f = 1 MHz 10ms o TC = 25 C Single Pulse 1 0.1 0 5 10 15 20 25 30 35 40 VDS - Volts IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 10 100 VDS - Volts 1,000 IXTY3N60P IXTA3N60P IXTP3N60P Fig. 13. Maximum Transient Thermal Impedance 10 Fig. 13. Maximum Transient Thermal Impedance Z (th )JC - K / W 3 1 0.1 0.0001 0.001 0.01 0.1 1 Pulse Width - Second © 2017 IXYS CORPORATION, All Rights Reserved IXYS REF: T_3N60P(2J) 6-20-17-A IXTY3N60P TO-252 AA Outline A A E b3 4 L3 TO-263 Outline E c2 C2 TO-220 Outline A E1 L1 A1 L4 1 2 A2 3 L1 e e1 e1 b2 L L2 c 0 5.55MIN OPTIONAL 1 1 - Gate 2,4 - Drain 3 - Source 2 L2 3 b2 A1 6.40 A1 H1 Q D2 D b L3 c e 0.43 [11.0] D1 e E1 0 2.85MIN 2.28 1.25MIN LAND PATTERN RECOMMENDATION IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 0.20 [5.0] 0.10 [2.5] A2 EJECTOR PIN 0.66 [16.6] A2 1 - Gate 2,4 - Drain 3 - Source 4 A oP 4 H 0.34 [8.7] 6.50MIN BOTTOM VIEW E D1 D H IXTA3N60P IXTP3N60P L1 L 0.12 [3.0] 0.06 [1.6] e c e1 3X b 3X b2 1 - Gate 2,4 - Drain 3 - Source Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. 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