IXTA44P15T

IXTA44P15T IXTP44P15T IXTQ44P15T IXTH44P15T TrenchPTM Power MOSFETs P-Channel Enhancement Mode Avalanche Rated TO-263 AA (IXTA) VDSS ID25 RDS(on) TO-220AB (IXTP) G D S G DS S D (Tab) Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C - 150 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ - 150 V VGSS Continuous ±15 V VGSM Transient ±25 V ID25 TC = 25°C - 44 A IDM TC = 25°C, Pulse Width Limited by TJM -130 A IA EAS TC = 25°C TC = 25°C - 22 1 A J PD TC = 25°C 298 W -55 ... +150 150 -55 ... +150 °C °C °C 300 260 °C °C 1.13/10 Nm/lb.in. 2.5 3.0 5.5 6.0 g g g g TJ TJM Tstg TL TSOLD 1.6mm (0.062 in.) from Case for 10s Plastic Body for 10s Md Mounting Torque (TO-220, TO-247 & TO-3P) Weight TO-263 TO-220 TO-3P TO-247 G Characteristic Values Min. Typ. Max. BVDSS VGS = 0V, ID = - 250μA -150 VGS(th) VDS = VGS, ID = - 250μA - 2.0 IGSS VGS = ±15V, VDS = 0V ±100 nA IDSS VDS = VDSS, VGS = 0V - 15 μA - 750 μA RDS(on) VGS = -10V, ID = 0.5 • ID25, Note 1 TJ = 125°C - 4.0 D S G = Gate S = Source D (Tab) D = Drain Tab = Drain Features z International Standard Packages Avalanche Rated z Extended FBSOA z Fast Intrinsic Diode z Low RDS(ON) and QG z Advantages z z Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) Tab TO-247 (IXTH) z © 2013 IXYS CORPORATION, All Rights Reserved - 150V - 44A Ω 65mΩ TO-3P (IXTQ) G D (Tab) = = ≤ Easy to Mount Space Savings High Power Density Applications V z V z z z z z High-Side Switching Push Pull Amplifiers DC Choppers Automatic Test Equipment Current Regulators Battery Charger Applications 65 mΩ DS100023B(01/13) IXTA44P15T IXTP44P15T IXTQ44P15T IXTH44P15T Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max. gfs 27 VDS = -10V, ID = 0.5 • ID25, Note 1 Ciss Coss VGS = 0V, VDS = - 25V, f = 1MHz Crss td(on) tr td(off) tf Resistive Switching Times VGS = -10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 RG = 1Ω (External) Qg(on) Qgs VGS = -10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 Qgd 45 S 13.4 nF 675 pF 183 pF 25 ns 42 ns 50 ns 17 ns 175 nC 65 nC 58 nC 0.42 °C/W RthJC RthCS TO-220 TO-247 & TO-3P 0.50 0.21 °C/W °C/W Source-Drain Diode Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max. IS VGS = 0V - 44 A ISM Repetitive, Pulse Width Limited by TJM -176 A VSD IF = IS, VGS = 0V, Note 1 -1.3 V trr QRM IRM IF = - 22A, -di/dt = -100A/μs VR = - 75V, VGS = 0V Note 140 0.87 -12.4 ns μC A 1. Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,860,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 IXTA44P15T IXTP44P15T IXTQ44P15T IXTH44P15T TO-247 Outline TO-3P Outline Pins: 1 = Gate 2 = Drain 3 = Source 1 - Gate 3 - Source 2,4 - Drain TO-263 Outline TO-220 Outline Pins: 1 - Gate 3 - Source 2 - Drain © 2013 IXYS CORPORATION, All Rights Reserved IXTA44P15T IXTP44P15T IXTQ44P15T IXTH44P15T Fig. 1. Output Characteristics @ T J = 25ºC Fig. 2. Extended Output Characteristics @ T J = 25ºC -180 -44 VGS = -10V - 8V - 7V -140 -120 - 6V -28 ID - Amperes ID - Amperes -36 VGS = -10V - 9V - 8V -160 -20 - 7V -100 -80 -60 - 6V -12 -40 - 5V - 5V -20 -4 0 0 -0.4 -0.8 -1.2 -1.6 -2 -2.4 -2.8 0 -10 -15 -20 -25 -30 VDS - Volts Fig. 3. Output Characteristics @ T J = 125ºC Fig. 4. RDS(on) Normalized to ID = - 22A Value vs. Junction Temperature -44 2.2 VGS = -10V - 8V - 7V -36 2.0 VGS = -10V 1.8 R DS(on) - Normalized - 6V ID - Amperes -5 VDS - Volts -28 - 5V -20 I D = - 44A 1.6 I D = -22A 1.4 1.2 1.0 -12 0.8 0.6 -4 0.4 0 -0.5 -1 -1.5 -2 -2.5 -3 -3.5 -4 -4.5 -5 -50 -25 0 VDS - Volts 25 50 75 100 125 150 125 150 TJ - Degrees Centigrade Fig. 5. RDS(on) Normalized to ID = - 22A Value vs. Drain Current Fig. 6. Maximum Drain Current vs. Case Temperature -50 2.2 VGS = -10V TJ = 125ºC 2.0 ID - Amperes R DS(on) - Normalized -40 1.8 1.6 1.4 -30 -20 1.2 TJ = 25ºC -10 1.0 0 0.8 0 -20 -40 -60 -80 -100 -120 -140 ID - Amperes IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. -50 -25 0 25 50 75 TC - Degrees Centigrade 100 IXTA44P15T IXTP44P15T IXTQ44P15T IXTH44P15T Fig. 8. Transconductance Fig. 7. Input Admittance 70 -50 TJ = - 40ºC TJ = 125ºC 25ºC - 40ºC 25ºC 50 g f s - Siemens -40 ID - Amperes 60 -30 -20 125ºC 40 30 20 -10 10 0 -3.0 0 -3.5 -4.0 -4.5 -5.0 -5.5 -6.0 0 -5 -10 -15 -20 VGS - Volts Fig. 9. Forward Voltage Drop of Intrinsic Diode -30 -35 -40 -45 -50 Fig. 10. Gate Charge -140 -10 VDS = - 75V -9 -120 I D = - 22A -8 -100 I G = -1mA -7 VGS - Volts IS - Amperes -25 ID - Amperes -80 -60 TJ = 125ºC -40 -6 -5 -4 -3 TJ = 25ºC -2 -20 -1 0 -0.4 0 -0.5 -0.6 -0.7 -0.8 -0.9 -1.0 -1.1 0 -1.2 20 40 60 80 100 120 140 160 180 QG - NanoCoulombs VSD - Volts Fig. 11. Capacitance Fig. 12. Forward-Bias Safe Operating Area - 1000 100,000 f = 1 MHz 10,000 Ciss Coss 1,000 25µs 100µs ID - Amperes Capacitance - PicoFarads RDS(on) Limit - 100 - 10 1ms 10ms -1 100ms TJ = 150ºC Crss DC TC = 25ºC Single Pulse - 0.1 100 0 -5 -10 -15 -20 -25 VDS - Volts © 2013 IXYS CORPORATION, All Rights Reserved -30 -35 -40 -1 -10 - 100 VDS - Volts - 1000 IXTA44P15T IXTP44P15T IXTQ44P15T IXTH44P15T Fig. 13. Resistive Turn-on Rise Time vs. Junction Temperature Fig. 14. Resistive Turn-on Rise Time vs. Drain Current 50 48 46 RG = 1Ω, VGS = -10V t r - Nanoseconds 42 t r - Nanoseconds 44 VDS = - 75V 38 I 34 D = - 22A 30 I D = - 44A 40 TJ = 25ºC RG = 1Ω, VGS = -10V VDS = - 75V 36 32 28 26 TJ = 125ºC 24 22 18 20 25 35 45 55 65 75 85 95 105 115 125 -22 -24 -26 -28 -30 TJ - Degrees Centigrade Fig. 15. Resistive Turn-on Switching Times vs. Gate Resistance 20 80 19 20 16 0 15 0 8 10 12 14 16 18 td(off) - - - - RG = 1Ω, VGS = -10V 55 50 I D = - 44A 45 25 20 35 45 55 Fig. 17. Resistive Turn-off Switching Times vs. Drain Current 60 55 TJ = 25ºC 16 50 td(off) - - - - 45 TJ = 25ºC RG = 1Ω, VGS = -10V VDS = - 75V 14 40 -32 -34 -36 -38 -40 tf 140 -42 -44 ID - Amperes IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. t f - Nanoseconds 17 -30 115 40 125 td(off) - - - - 270 240 VDS = - 75V 120 210 I D = - 22A 100 180 80 150 I D = - 44A 60 120 40 90 20 60 0 30 0 2 4 6 8 10 RG - Ohms 12 14 16 18 20 t d(off) - Nanoseconds TJ = 125ºC -28 105 TJ = 125ºC, VGS = -10V t d(off) - Nanoseconds t f - Nanoseconds 18 -26 95 300 160 TJ = 125ºC -24 85 180 65 -22 75 Fig. 18. Resistive Turn-off Switching Times vs. Gate Resistance 19 tf 65 TJ - Degrees Centigrade RG - Ohms 15 60 17 50 6 -44 I D = - 22A 40 4 -42 18 100 2 -40 t d(off) - Nanoseconds 60 I D = - 44A, - 22A 0 -38 VDS = - 75V t f - Nanoseconds VDS = - 75V 150 -36 65 tf t d(on) - Nanoseconds t r - Nanoseconds 100 td(on) - - - - TJ = 125ºC, VGS = -10V 200 -34 Fig. 16. Resistive Turn-off Switching Times vs. Junction Temperature 250 tr -32 ID - Amperes IXTA44P15T IXTP44P15T IXTQ44P15T IXTH44P15T Fig. 19. Maximum Transient Thermal Impedance Z (th)JC - ºC / W 1 0.1 0.01 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 Pulse Width - Seconds © 2013 IXYS CORPORATION, All Rights Reserved IXYS REF: T_44P15T(A6)11-05-10-A Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics.