IXTA50N20P

PolarHTTM Power MOSFET IXTA50N20P IXTP50N20P IXTQ50N20P VDSS ID25 = = ≤ RDS(on) 200V 50A Ω 60mΩ N-Channel Enhancement Mode Avalanche Rated TO-263 (IXTA) Symbol Test Conditions VDSS TJ = 25°C to 175°C Maximum Ratings 200 V VDGR TJ = 25°C to 175°C, RGS = 1MΩ 200 V VGSS Continuous ±20 V VGSM Transient ±30 V ID25 TC = 25°C 50 A IDM TC = 25°C, pulse width limited by TJM 120 A IA TC = 25°C 50 A EAS TC = 25°C 1 J dV/dt IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 175°C 10 V/ns PD TC = 25°C 360 W - 55 ... +175 175 - 55 ... +175 °C °C °C 300 260 °C °C 1.13/10 Nm/lb.in. 2.5 3.0 5.5 g g g TJ TJM Tstg TL TSOLD 1.6mm (0.062 in.) from case for 10s Plastic body for 10s Md Mounting torque Weight TO-263 TO-220 TO-3P (TO-3P,TO-220) G S (TAB) TO-220 (IXTP) G (TAB) D S TO-3P (IXTQ) G D (TAB) S G = Gate S = Source D = Drain TAB = Drain Features Symbol Test Conditions (TJ = 25°C, unless otherwise specified) Characteristic Values Min. Typ. Max. BVDSS VGS = 0V, ID = 250μA 200 VGS(th) VDS = VGS, ID = 250μA 2.5 IGSS VGS = ±20V, VDS = 0V IDSS VDS = VDSS VGS = 0V RDS(on) VGS = 10V, ID = 0.5 • ID25, Note 1 © 2008 IXYS CORPORATION, All rights reserved V 5.0 V ±100 nA TJ = 150°C 25 μA 250 μA 60 mΩ • International standard packages • Unclamped Inductive Switching (UIS) rated • Low package inductance - easy to drive and to protect Advantages • Easy to mount • Space savings • High power density DS99156F(07/08) IXTA50N20P IXTP50N20P IXTQ50N20P Symbol Test Conditions (TJ = 25°C, unless otherwise specified) Characteristic Values Min. Typ. Max. gfs 12 VDS = 10V, ID = 0.5 • ID25, Note 1 Ciss Coss VGS = 0V, VDS = 25V, f = 1MHz Crss td(on) tr td(off) tf Resistive Switching Times VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 RG = 10Ω (External) Qg(on) Qgs VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 Qgd 23 S 2720 pF 490 pF 105 pF 26 ns 35 ns 70 ns 30 ns 70 nC 17 nC 37 nC 0.42 °C/W RthJC RthCS TO-3P (IXTQ) Outline (TO-3P) 0.21 °C/W (TO-220) 0.25 °C/W Source-Drain Diode Symbol Test Conditions (TJ = 25°C, unless otherwise specified) IS VGS = 0V ISM Characteristic Values Min. Typ. Max. 50 A Repetitive, pulse width limited by TJM 120 A VSD IF = 50A, VGS = 0V, Note 1 1.5 V trr QRM IF = 25A, -di/dt = 100A/μs VR = 100V, VGS = 0V 150 2.0 TO-220 (IXTP) Outline ns μC Note 1: Pulse test, t ≤ 300μs; duty cycle, d ≤ 2%. TO-263 (IXTA) Outline Pins: 1 - Gate 3 - Source 2 - Drain 4 - Drain IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 IXTA50N20P IXTP50N20P IXTQ50N20P Fig. 1. Output Characteristics Fig. 2. Extended Output Characteristics @ 25ºC @ 25ºC 50 100 45 40 80 9V 35 9V 70 30 I D - Amperes I D - Amperes VGS = 10V 90 VGS = 10V 8V 25 20 7V 15 60 50 8V 40 30 10 6V 5 0 20 7V 10 6V 0 0.0 0.4 0.8 1.2 1.6 2.0 2.4 2.8 3.2 0 3.6 2 4 6 Fig. 3. Output Characteristics @ 150ºC VGS = 10V I D - Amperes R D S ( o n ) - Normalized 9V 40 35 8V 30 25 20 7V 15 6V 10 5 5V 0 0 1 2 3 4 5 6 7 3.2 3.0 2.8 2.6 12 14 16 18 20 VGS = 10V 2.4 2.2 2.0 1.8 1.6 1.4 1.2 ID = 50A ID = 25A 1.0 0.8 0.6 0.4 8 -50 -25 0 VD S - Volts 25 50 75 100 125 150 175 150 175 TJ - Degrees Centigrade Fig. 5. RDS(on) Normalized to I D = 25A Value vs. Drain Current Fig. 6. Drain Current vs. Case Temperature 55 4.2 3.8 50 VGS = 10V 45 3.4 40 TJ = 175ºC 3 I D - Amperes R D S ( o n ) - Normalized 10 Fig. 4. RDS(on) Normalized to I D = 25A Value vs. Junction Temperature 50 45 8 V D S - Volts V D S - Volts 2.6 2.2 TJ = 125ºC 1.8 35 30 25 20 15 1.4 10 TJ = 25ºC 1 5 0 0.6 0 10 20 30 40 I D 50 60 - Amperes © 2008 IXYS CORPORATION, All rights reserved 70 80 90 100 -50 -25 0 25 50 75 100 125 T C - Degrees Centigrade IXTA50N20P IXTP50N20P IXTQ50N20P Fig. 8. Transconductance 90 36 80 32 70 28 60 24 g f s - Siemens I D - Amperes Fig. 7. Input Admittance 50 40 TJ = 150ºC 30 25ºC - 40ºC 20 TJ = - 40ºC 25ºC 20 150ºC 16 12 8 4 10 0 0 4 5 6 7 8 9 0 10 10 20 30 40 V G S - Volts Fig. 9. Source Current vs. Source-To-Drain Voltage D 60 70 80 90 100 110 120 - Amperes Fig. 10. Gate Charge 10 150 125 100 VG S - Volts I S - Amperes 50 I 75 50 9 VDS = 100V 8 ID = 25A 7 IG = 10mA 6 5 4 3 TJ = 150ºC 2 TJ = 25ºC 25 1 0 0 0 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4 1.5 V S D - Volts 10 20 Q 30 G 40 50 60 70 - nanoCoulombs Fig. 12. Forward-Bias Safe Operating Area Fig. 11. Capacitance 10000 1000 RDS(ON) Limit 1000 TC = 25ºC Single Puls e C iss I D - Amperes Capacitance - picoFarads TJ = 175ºC C oss 100 100 25µs 100µs 1m s 10 C rss DC 10ms f = 1MHz 10 1 0 5 10 15 20 25 30 35 40 VD S - Volts IXYS reserves the right to change limits, test conditions, and dimensions. 10 100 V D S - Volts 1000 IXTA50N20P IXTP50N20P IXTQ50N20P Fig. 13. Maximum Transient Thermal Impedance Z ( t h ) J C - ºC / W 1.00 0.10 0.01 0.1 1 10 100 1000 Pulse Width - milliseconds © 2008 IXYS CORPORATION, All rights reserved IXYS REF: T_50N20P(5S)7-31-08-F Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics.