IXTA60N10T

IXTA60N10T IXTP60N10T TrenchTM Power MOSFET VDSS ID25 RDS(on) N-Channel Enhancement Mode Avalanche Rated = 100V = 60A   18m TO-263 (IXTA) G S D (Tab) Symbol Test Conditions Maximum Ratings VDSS TJ = 25C to 175C 100 V VDGR TJ = 25C to 175C, RGS = 1M 100 V VGSS VGSM Continuous Transient  20  30 V V ID25 IDM TC = 25C TC = 25C, Pulse Width Limited by TJM 60 180 A A IA TC = 25C 10 A EAS TC = 25C 500 mJ PD TC = 25C 176 W -55 ... +175  C TJM 175  C Tstg -55 ... +175  C TJ TL TSOLD Maximum Lead Temperature for Soldering 1.6 mm (0.062in.) from Case for 10s FC Md Mounting Force (TO-263) Mounting Torque (TO-220) Weight TO-263 TO-220 300 260 °C °C 10..65 / 2.2..14.6 1.13 / 10 N/lb Nm/lb.in 2.5 3.0 g g TO-220 (IXTP) G D S G = Gate S = Source D (Tab) D = Drain Tab = Drain Features      Ultra-Low On Resistance Avalanche Rated Low Package Inductance - Easy to Drive and to Protect 175C Operating Temperature Fast Intrinsic Diode Advantages    Easy to Mount Space Savings High Power Density Applications Symbol Test Conditions (TJ = 25C Unless Otherwise Specified) Characteristic Values Min. Typ. Max. BVDSS VGS = 0V, ID = 250A 100 VGS(th) VDS = VGS, ID = 50A 2.5 IGSS VGS =  20V, VDS = 0V IDSS VDS = VDSS, VGS = 0V V 4.5 V             100 nA 1 A 100  A TJ = 150C RDS(on)  VGS = 10V, ID = 25A, Notes 1& 2 14.8 18.0 m       © 2018 IXYS CORPORATION, All rights reserved Automotive - Motor Drives - 42V Power Bus - ABS Systems DC/DC Converters and Off-line UPS Primary Switch for 24V and 48V Systems Distributed Power Architechtures and VRMs Electronic Valve Train Systems High Current Switching Applications High Voltage Synchronous Recifier DS99647C(11/18) IXTA60N10T IXTP60N10T Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) gfs Characteristic Values Min. Typ. Max. VDS = 10V, ID = 30A, Note 1 25 Ciss Coss VGS = 0V, VDS = 25V, f = 1MHz Crss td(on) tr td(off) tf Resistive Switching Times VGS = 10V, VDS = 0.5 • VDSS, ID = 10A RG = 15 (External) Qg(on) Qgs VGS = 10V, VDS = 0.5 • VDSS, ID = 10A Qgd E 42 S 2650 pF 335 pF 60 pF 27 ns 40 ns 43 ns 37 ns 49 nC 15 nC 11 nC C2 A E1 L1 D1 D 1 2 L2 3 b b2 A1 4 H L3 c e 0.43 [11.0] e 0 0.34 [8.7] 0.66 [16.6] A2 1 - Gate 2,4 - Drain 3 - Source 0.20 [5.0] 0.10 [2.5] 0.12 [3.0] 0.06 [1.6] 0.85C/W RthJC RthCH TO-263 Outline TO-220 0.50  C/W Source-Drain Diode Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) IS VGS = 0V ISM VSD trr IRM QRM Characteristic Values Min. Typ. Max. 60 A Repetitive, Pulse Width Limited by TJM 240 A IF = 25A, VGS = 0V, Note 1 1.2 V 59 5.1 180 IF = 30A, VGS = 0V -di/dt = 100A/s, VR = 50V TO-220 Outline E ns A nC A oP A1 H1 Q D2 D D1 E1 A2 EJECTOR PIN L1 L Notes: 1. Pulse test, t  300s; duty cycle, d  2%. e 3X b c e1 2. On through-hole packages, RDS(on) Kelvin test contact location must be 5mm or less from the package body. 3X b2 1 - Gate 2,4 - Drain 3 - Source IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,860,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 IXTA60N10T IXTP60N10T Fig. 1. Output Characteristics @ TJ = 25oC Fig. 2. Extended Output Characteristics @ TJ = 25oC 60 200 VGS = 10V 9V 8V 160 9V 140 40 I D - Amperes I D - Amperes 50 VGS = 10V 180 7V 30 20 120 8V 100 80 7V 60 40 10 6V 6V 20 0 0 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 1.1 1.2 0 5 10 2.8 60 VGS = 10V 9V 8V 40 RDS(on) - Normalized I D - Amperes 25 30 VGS = 10V 2.4 7V 30 6V 20 10 I D = 60A 2.0 I D = 30A 1.6 1.2 0.8 5V 0 0.4 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2 2.2 2.4 -50 -25 0 25 Fig. 5. RDS(on) Normalized to ID = 30A Value vs. Drain Current 3.2 50 75 100 125 150 175 TJ - Degrees Centigrade VDS - Volts Fig. 6. Drain Current vs. Case Temperature 70 o VGS = 10V 15V 2.8 TJ = 175 C 60 50 2.4 I D - Amperes RDS(on) - Normalized 20 Fig. 4. RDS(on) Normalized to ID = 30A Value vs. Junction Temperature Fig. 3. Output Characteristics @ TJ = 150oC 50 15 VDS - Volts VDS - Volts 2.0 1.6 40 30 20 o TJ = 25 C 1.2 10 0 0.8 0 15 30 45 60 75 90 I D - Amperes © 2018 IXYS CORPORATION, All rights reserved 105 120 135 150 -50 -25 0 25 50 75 100 TC - Degrees Centigrade 125 150 175 IXTA60N10T IXTP60N10T Fig. 8. Transconductance Fig. 7. Input Admittance 70 90 o 80 TJ = - 40 C 60 70 50 g f s - Siemens I D - Amperes 60 50 40 o TJ = 150 C o 25 C 30 o - 40 C o 25 C 40 30 o 150 C 20 20 10 10 0 0 4.0 4.5 5.0 5.5 6.0 6.5 7.0 0 7.5 10 20 30 Fig. 9. Forward Voltage Drop of Intrinsic Diode 50 60 70 80 90 Fig. 10. Gate Charge 180 10 160 9 VDS = 50V I D = 10A 8 140 I G = 10mA 7 120 VGS - Volts I S - Amperes 40 I D - Amperes VGS - Volts 100 80 o TJ = 150 C 60 5 4 3 o TJ = 25 C 40 6 2 20 1 0 0 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4 0 5 10 VSD - Volts 15 20 25 30 35 40 45 50 QG - NanoCoulombs Fig. 11. Capacitance Fig. 12. Maximum Transient Thermal Impedance 1 10,000 C iss 1,000 Z (th)JC - K / W Capacitance - PicoFarads f = 1 MHz C oss 0.1 100 C rss 10 0 5 10 15 20 25 30 35 40 VDS - Volts IXYS reserves the right to change limits, test conditions, and dimensions. 0.01 0.00001 0.0001 0.001 0.01 0.1 Pulse Width - Seconds 1 10 IXTA60N10T IXTP60N10T Fig. 14. Resistive Turn-on Rise Time vs. Drain Current Fig. 13. Resistive Turn-on Rise Time vs. Junction Temperature 60 60 RG = 15Ω, VGS = 10V RG = 15Ω, VGS = 10V 55 55 VDS = 50V VDS = 50V o t r - Nanoseconds t r - Nanoseconds TJ = 25 C 50 45 I D = 30A 40 35 50 45 40 35 o TJ = 125 C 30 30 I D = 10A 25 25 25 35 45 55 65 75 85 95 105 115 125 10 12 14 16 18 td(on) 70 o TJ = 125 C, VGS = 10V 50 10A < I D < 30A 40 I D = 10A 70 30 50 20 30 38 20 25 60 30 35 40 45 50 37 tf 56 td(off) RG = 15Ω, VGS = 10V VDS = 50V 36 52 I D = 30A 35 48 34 44 33 10 15 25 55 35 45 55 Fig. 17. Resistive Turn-off Switching Times vs. Drain Current 55 36 51 35 47 43 o TJ = 25 C 33 32 12 14 16 18 20 22 95 105 115 40 125 24 I D - Amperes © 2018 IXYS CORPORATION, All rights reserved 26 28 185 I D = 10A, 30A td(off) 170 30 TJ = 125 C, VGS = 10V 100 155 VDS = 50V 90 140 80 125 70 110 60 95 50 80 39 40 65 35 30 t d(off) - Nanoseconds o 10 tf 110 t d ( o f f ) - Nanoseconds 59 TJ = 125 C 34 85 o VDS = 50V 37 75 Fig. 18. Resistive Turn-off Switching Times vs. Gate Resistance 120 63 RG = 15Ω, VGS = 10V 38 t f - Nanoseconds 67 td(off) t f - Nanoseconds tf 39 65 TJ - Degrees Centigrade RG - Ohms 40 30 I D = 10A 60 90 28 t d(off) - Nanoseconds 110 26 64 I D = 30A VDS = 50V 130 24 39 t d(on) - Nanoseconds t r - Nanoseconds 80 t f - Nanoseconds tr 150 22 Fig. 16. Resistive Turn-off Switching Times vs. Junction Temperature Fig. 15. Resistive Turn-on Switching Times vs. Gate Resistance 170 20 I D - Amperes TJ - Degrees Centigrade 50 15 20 25 30 35 40 45 50 55 RG - Ohms IXYS REF: T_60N10T (2V)8-07-08-A Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics.