IXTA64N10L2

Preliminary Technical Information IXTA64N10L2 IXTP64N10L2 IXTH64N10L2 LinearL2TM Power MOSFET w/Extended FBSOA VDSS ID25 = 100V = 64A  32m  RDS(on) N-Channel Enhancement Mode Guaranteed FBSOA Avalanche Rated TO-263 (IXTA) G S D (Tab) TO-220 (IXTP) Symbol Test Conditions Maximum Ratings VDSS TJ = 25C to 150C 100 V VDGR TJ = 25C to 150C, RGS = 1M 100 V VGSS Continuous 20 V VGSM Transient 30 V ID25 TC = 25C 64 A IDM TC = 25C, Pulse Width Limited by TJM 140 A IA EAS TC = 25C TC = 25C 32 2 A J PD TC = 25C 357 W -55 to +150 C TJM +150 C Tstg -55 to +150 C TJ G D S TO-247 (IXTH) G D S G = Gate S = Source TL TSOLD Maximum Lead Temperature for Soldering Plastic Body for 10s 300 260 °C °C FC Md Mounting Force (TO-263) 10..65 / 2.2..14.6 Mounting Torque (TO-220 & TO-247) 1.13 / 10 N/lb Nm/lb.in  Weight TO-263 TO-220 TO-247 g g g  2.5 3.0 6.0 D (Tab) D (Tab) D = Drain Tab = Drain Features   Designed for Linear Operation International Standard Packages Avalanche Rated Guaranteed FBSOA at 75C Advantages    Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max. BVDSS VGS = 0V, ID = 250A 100 VGS(th) VDS = VGS, ID = 250A 2.5 IGSS VGS = 20V, VDS = 0V IDSS VDS = VDSS, VGS = 0V TJ = 125C RDS(on) VGS = 10V, ID = 0.5 • ID25, Note 1 © 2018 IXYS CORPORATION, All Rights Reserved Easy to Mount Space Savings High Power Density Applications V  4.5 V  100 nA  5 A 25 A   Solid State Circuit Breakers Soft Start Controls Linear Amplifiers Programmable Loads Current Regulators 32 m DS100557A(11/18) IXTA64N10L2 Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max. gfs 21 VDS = 10V, ID = 0.5 • ID25, Note 1 27 VGS = 0V, VDS = 25V, f = 1MHz Crss RGi Integrated Gate Input Resistor td(on) Resistive Switching Times tr td(off) tf 720 pF pF 1.2  14 ns 27 ns 38 ns RG = 0 (External) 11 ns 100 nC 16 nC 45 nC VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 Qgd 0.35 C/W RthJC RthCS pF 235 VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 Qg(on) Qgs S 3620 Ciss Coss 33 IXTP64N10L2 IXTH64N10L2 TO-220 TO-247 0.50 0.21 C/W C/W Safe Operating Area Specification Characteristic Values Min. Typ. Max. Symbol Test Conditions SOA VDS = 100V, ID = 2.15A, TC = 75°C, Tp = 5s 215 W Source-Drain Diode Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max. IS VGS = 0V ISM Repetitive, Pulse Width Limited by TJM VSD IF = IS, VGS = 0V, Note 1 trr IRM QRM IF = 32A, -di/dt = 100A/s, VR = 50V, VGS = 0V 180 16.2 1.46 64 A 256 A 1.4 V ns A μC Note 1. Pulse test, t  300s, duty cycle, d 2%. PRELIMINARY TECHNICAL INFORMATION The product presented herein is under development. The Technical Specifications offered are derived from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a "considered reflection" of the anticipated result. IXYS reserves the right to change limits, test conditions, and dimensions without notice. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,860,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 IXTA64N10L2 o o Fig. 1. Output Characteristics @ TJ = 25 C 13V 11V 10V VGS = 20V 160 8V 140 120 7V 40 I D - Amperes I D - Amperes 50 Fig. 2. Extended Output Characteristics @ TJ = 25 C 180 VGS = 20V 15V 12V 10V 9V 60 IXTP64N10L2 IXTH64N10L2 30 6V 9V 100 8V 80 60 20 7V 40 10 5V 20 0 6V 0 0 0.5 1 1.5 2 2.5 0 5 10 15 VDS - Volts VGS = 20V 13V 10V 9V 2.6 8V 7V I D - Amperes 30 VGS = 10V 2.2 RDS(on) - Normalized 50 25 Fig. 4. RDS(on) Normalized to ID = 32A Value vs. Junction Temperature o Fig. 3. Output Characteristics @ TJ = 125 C 60 20 VDS - Volts 40 30 6V 20 10 I D = 64A 1.8 1.4 I D = 32A 1.0 0.6 5V 0 0.2 0 1 2 3 4 5 -50 -25 0 VDS - Volts Fig. 5. RDS(on) Normalized to ID = 32A Value vs. Drain Current 4.5 50 75 100 125 150 Fig. 6. Maximum Drain Current vs. Case Temperature 70 VGS = 10V 4.0 60 3.5 50 3.0 I D - Amperes RDS(on) - Normalized 25 TJ - Degrees Centigrade o TJ = 125 C 2.5 2.0 40 30 20 1.5 o TJ = 25 C 10 1.0 0.5 0 0 20 40 60 80 100 I D - Amperes © 2018 IXYS CORPORATION, All Rights Reserved 120 140 160 -50 -25 0 25 50 75 TC - Degrees Centigrade 100 125 150 IXTA64N10L2 Fig. 7. Input Admittance IXTP64N10L2 IXTH64N10L2 Fig. 8. Transconductance 100 45 90 40 o 80 35 o 25 C 70 30 g f s - Siemens I D - Amperes TJ = - 40 C 60 50 40 o 20 15 o TJ = 125 C 30 o 25 C 20 125 C 25 10 o - 40 C 5 10 0 0 3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5 8.0 0 8.5 10 20 30 40 VGS - Volts Fig. 9. Forward Voltage Drop of Intrinsic Diode 60 70 80 90 100 Fig. 10. Gate Charge 240 10 VDS = 50V 9 200 I D = 32A 8 I G = 10mA 7 V GS - Volts 160 I S - Amperes 50 I D - Amperes 120 80 6 5 4 3 o TJ = 125 C 2 o TJ = 25 C 40 1 0 0 0.4 0.5 0.6 0.7 0.8 0.9 1 1.1 1.2 1.3 0 1.4 10 20 30 40 50 60 70 80 90 100 QG - NanoCoulombs VSD - Volts Fig. 12. Maximum Transient Thermal Impedance Fig. 11. Capacitance 10,000 1 Ciss Z (th)JC - K / W Capacitance - PicoFarads f = 1 MHz 1,000 C oss 0.1 0.01 Crss 100 0 5 10 15 20 25 30 35 40 VDS - Volts IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 0.001 0.00001 0.0001 0.001 0.01 0.1 Pulse Width - Seconds 1 10 IXTA64N10L2 Fig. 13. Forward-Bias Safe Operating Area IXTP64N10L2 IXTH64N10L2 Fig. 14. Forward-Bias Safe Operating Area o o @ TC = 25 C @ TC = 75 C 1000 1000 RDS(on) Limit RDS(on) Limit 100 100 100μs 1ms 10 25μs I D - Am peres I D - Am peres 25μs 100μs 10 1ms 10ms 100ms o TJ = 150 C DC o TC = 25 C Single Pulse 10ms o TJ = 150 C 100ms o TC = 75 C Single Pulse 1 DC 1 1 10 VDS - Volts © 2018 IXYS CORPORATION, All Rights Reserved 100 1 10 100 VDS - Volts IXYS REF: T_64N10L2(6R) 8-16-13 IXTA64N10L2 TO-263 Outline 1 - Gate 2,4 - Drain 3 - Source TO-220 Outline 1 - Gate 2,4 - Drain 3 - Source TO-247 Outline 1 - Gate 2,4 - Drain 3 - Source IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXTP64N10L2 IXTH64N10L2 Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. 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