IXTA80N10T

IXTA80N10T IXTP80N10T TrenchTM Power MOSFET VDSS ID25 RDS(on) N-Channel Enhancement Mode Avalanche Rated = 100V = 80A   14m TO-263 (IXTA) G S D (Tab) Symbol Test Conditions Maximum Ratings VDSS TJ = 25C to 175C 100 V VDGR TJ = 25C to 175C, RGS = 1M 100 V VGSS VGSM Continuous Transient  20  30 V V ID25 IDM TC = 25C TC = 25C, Pulse Width Limited by TJM 80 220 A A IA TC = 25C 25 A EAS TC = 25C 400 mJ dv/dt IS  IDM, VDD  VDSS, TJ  175C 10 V/ns PD TC = 25C 230 W TO-220 (IXTP) G D S G = Gate S = Source -55 ... +175  C  175  C  Tstg -55 ... +175  C  TL TSOLD Maximum Lead Temperature for Soldering 1.6 mm (0.062in.) from Case for 10s FC Md Mounting Force (TO-263) Mounting Torque (TO-220) Weight TO-263 TO-220 300 260 °C °C 10..65 / 2.2..14.6 1.13 / 10 N/lb Nm/lb.in 2.5 3.0 g g D = Drain Tab = Drain Features TJM TJ D (Tab)   Ultra-Low On Resistance Avalanche Rated Low Package Inductance - Easy to Drive and to Protect 175C Operating Temperature Fast Intrinsic Diode Advantages    Easy to Mount Space Savings High Power Density Applications  Symbol Test Conditions (TJ = 25C Unless Otherwise Specified) Characteristic Values Min. Typ. Max. BVDSS VGS = 0V, ID = 250A 105 VGS(th) VDS = VGS, ID = 50A 2.5 IGSS VGS =  20V, VDS = 0V             200 nA IDSS VDS = 105V, VGS = 0V 5 A TJ = 150C RDS(on) VGS = 10V, ID = 25A, Notes 1& 2 V 4.5 V 150  A 14 m       © 2018 IXYS CORPORATION, All rights reserved Automotive - Motor Drives - 42V Power Bus - ABS Systems DC/DC Converters and Off-line UPS Primary Switch for 24V and 48V Systems Distributed Power Architechtures and VRMs Electronic Valve Train Systems High Current Switching Applications High Voltage Synchronous Recifier DS99648B(11/18) IXTA80N10T IXTP80N10T Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) gfs Characteristic Values Min. Typ. Max. VDS = 10V, ID = 40A, Note 1 33 Ciss Coss VGS = 0V, VDS = 25V, f = 1MHz Crss td(on) tr td(off) tf Resistive Switching Times VGS = 10V, VDS = 0.5 • VDSS, ID = 10A RG = 15 (External) Qg(on) Qgs VGS = 10V, VDS = 0.5 • VDSS, ID = 10A Qgd E 55 S 3040 pF 420 pF 90 pF 31 ns 54 ns 40 ns 48 ns 60 nC 21 nC 15 nC C2 A E1 L1 D1 D 1 2 L2 3 b b2 A1 4 H L3 c e 0.43 [11.0] e 0 0.34 [8.7] 0.66 [16.6] A2 1 - Gate 2,4 - Drain 3 - Source 0.20 [5.0] 0.10 [2.5] 0.12 [3.0] 0.06 [1.6] 0.65C/W RthJC RthCH TO-263 Outline TO-220 0.50  C/W Source-Drain Diode Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) IS VGS = 0V ISM Characteristic Values Min. Typ. Max. 80 A Repetitive, Pulse Width Limited by TJM 220 A VSD IF = 25A, VGS = 0V, Note 1 1.1 V trr IF = 25A, VGS = 0V 100 TO-220 Outline E A oP ns A1 H1 Q -di/dt = 100A/s, VR = 50V D2 D D1 E1 A2 EJECTOR PIN L1 L Notes: 1. Pulse test, t  300s; duty cycle, d  2%. e 3X b c e1 2. On through-hole packages, RDS(on) Kelvin test contact location must be 5mm or less from the package body. 3X b2 1 - Gate 2,4 - Drain 3 - Source IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,860,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 IXTA80N10T IXTP80N10T Fig. 1. Output Characteristics @ TJ = 25oC Fig. 2. Extended Output Characteristics @ TJ = 25oC 80 VGS = 10V 9V 70 8V 60 200 7V 50 I D - Amperes I D - Amperes VGS = 10V 240 40 30 9V 160 8V 120 80 7V 20 6V 40 10 6V 0 0 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 0 2 4 6 8 2.8 80 VGS = 10V 9V 8V 14 16 18 20 VGS = 10V 2.4 50 RDS(on) - Normalized 60 I D - Amperes 12 Fig. 4. RDS(on) Normalized to ID = 40A Value vs. Junction Temperature Fig. 3. Output Characteristics @ TJ = 150oC 70 10 VDS - Volts VDS - Volts 7V 40 30 6V 2.0 I D = 80A 1.6 I D = 40A 1.2 20 0.8 10 5V 0 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 0.4 2.0 2.2 -50 2.4 -25 0 Fig. 5. RDS(on) Normalized to ID = 40A Value vs. Drain Current 4.6 50 75 100 125 150 175 Fig. 6. Drain Current vs. Case Temperature 90 4.2 VGS = 10V 15V 3.8 80 o TJ = 175 C 70 3.4 I D - Amperes RDS(on) - Normalized 25 TJ - Degrees Centigrade VDS - Volts 3.0 2.6 2.2 o TJ = 25 C 60 50 40 30 1.8 20 1.4 10 1.0 0.6 0 0 25 50 75 100 125 150 I D - Amperes © 2018 IXYS CORPORATION, All rights reserved 175 200 225 250 -50 -25 0 25 50 75 100 TC - Degrees Centigrade 125 150 175 IXTA80N10T IXTP80N10T Fig. 7. Input Admittance Fig. 8. Transconductance 80 140 o 60 g f s - Siemens 100 I D - Amperes TJ = - 40 C 70 120 80 60 o TJ = 150 C o o 25 C 50 40 o 150 C 30 25 C 40 o - 40 C 20 20 10 0 0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5 8.0 0 20 40 60 VGS - Volts 80 100 120 140 160 I D - Amperes Fig. 9. Forward Voltage Drop of Intrinsic Diode Fig. 10. Gate Charge 10 240 9 VDS = 50V I D = 25A 8 200 I G = 10mA 160 VGS - Volts I S - Amperes 7 120 80 o TJ = 150 C 6 5 4 3 2 40 o TJ = 25 C 1 0 0 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 1.1 1.2 1.3 1.4 1.5 0 5 10 VSD - Volts 15 20 25 30 35 40 45 50 55 60 QG - NanoCoulombs Fig. 12. Maximum Transient Thermal Impedance Fig. 11. Capacitance 1 10,000 C iss 1,000 Z (th)JC - K / W Capacitance - PicoFarads f = 1 MHz Coss 0.1 100 Crss 10 0 5 10 15 20 25 30 35 40 VDS - Volts IXYS reserves the right to change limits, test conditions, and dimensions. 0.01 0.0001 0.001 0.01 0.1 Pulse Width - Seconds 1 10 IXTA80N10T IXTP80N10T Fig. 14. Resistive Turn-on Rise Time vs. Drain Current Fig. 13. Resistive Turn-on Rise Time vs. Junction Temperature 80 70 VDS = 50V VDS = 50V 70 60 t r - Nanoseconds t r - Nanoseconds RG = 15Ω , VGS = 10V 75 RG = 15Ω VGS = 10V 65 55 I D = 30A 50 o TJ = 25 C 65 60 55 50 45 45 40 o TJ = 125 C I D = 10A 40 35 35 25 35 45 55 65 75 85 95 105 115 125 10 12 14 16 18 TJ - Degrees Centigrade Fig. 15. Resistive Turn-on Switching Times vs. Gate Resistance 280 95 75 I D = 30A 65 120 55 I D = 10A 80 45 40 35 0 25 15 20 25 30 35 40 45 50 47 tf 46 RG = 15Ω, VGS = 10V 60 44 56 43 52 I D = 30A 42 48 41 44 40 40 39 25 35 45 55 78 160 70 140 95 105 115 36 125 44 54 o TJ = 125 C 42 46 40 o TJ = 25 C 38 22 24 I D - Amperes © 2018 IXYS CORPORATION, All rights reserved 26 28 30 td(off) 230 o TJ = 125 C, VGS = 10V VDS = 50V t f - Nanoseconds t f - Nanoseconds 85 120 190 I D = 10A 100 150 80 38 60 30 40 110 t d ( o f f ) - Nanoseconds 62 t d ( o f f ) - Nanoseconds 46 20 75 270 tf td(off) VDS = 50V 18 65 Fig. 18. Resistive Turn-off Switching Times vs. Gate Resistance RG = 15Ω, VGS = 10V 16 64 TJ - Degrees Centigrade tf 14 68 I D = 10A VDS = 50V 45 55 50 12 30 76 td(off) Fig. 17. Resistive Turn-off Switching Times vs. Drain Current 10 28 72 RG - Ohms 48 26 t d ( o f f ) - Nanoseconds VDS = 50V 160 24 48 85 t d ( o n ) - Nanoseconds t r - Nanoseconds td(on) o TJ = 125 C, VGS = 10V 200 22 Fig. 16. Resistive Turn-off Switching Times vs. Junction Temperature 49 t f - Nanoseconds tr 240 20 I D - Amperes 70 I D = 30A 30 15 20 25 30 35 40 45 50 55 RG - Ohms IXYS REF: T_80N10T (3V)12-11-07-A Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics.