IXTA86N20T

IXTA86N20T IXTP86N20T IXTQ86N20T Trench Gate Power MOSFET VDSS ID25 RDS(on) N-Channel Enhancement Mode Avalance Rated = 200V = 86A  33m  TO-263 G S D (Tab) TO-220 (IXTP) Symbol Test Conditions Maximum Ratings VDSS TJ = 25C to 175C 200 V VDGR TJ = 25C to 175C, RGS = 1M 200 V VGSS Continuous 20 V VGSM Transient 30 V ID25 TC = 25C 86 A IDM TC = 25C, Pulse Width Limited by TJM 260 A IA TC = 25C 10 A EAS TC = 25C 1 J PD TC = 25C 550 W dv/dt IS  IDM, VDD  VDSS, TJ  150°C 3 V/ns -55 ... +175 C TJ G D S TO-3P G D S D (Tab) G = Gate S = Source TJM 175 C Tstg -55 ... +175 C 300 260 °C °C  10..65 / 2.2..14.6 1.13 / 10 N/lb Nm/lb.in  2.5 3.0 5.5 g g g TL TSOLD Maximum Lead Temperature for Soldering 1.6 mm (0.062in.) from Case for 10s FC Md Mounting Force (TO-263) Mounting Torque (TO-220 & TO-3P) Weight TO-263 TO-220 TO-3P   BVDSS VGS = 0V, ID = 250μA 200 VGS(th) VDS = VGS, ID = 1mA 3.0 IGSS VGS = 20V, VDS = 0V IDSS VDS = VDSS, VGS = 0V  RDS(on) Applications 5.0 V 200 nA VGS = 10V, ID = 0.5 • ID25, Note 1 © 2018 IXYS CORPORATION, All Rights Reserved Easy to Mount Space Savings High Power Density V  TJ = 125C High Current Handling Capability Avalanche Rated Fast Intrinsic rectifier Low RDS(on) Advantages  Characteristic Values Min. Typ. Max. D = Drain Tab = Drain Features  Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) D (Tab) 1 250 A A 33 m       DC-DC Converters Battery Chargers Switch-Mode and Resonant-Mode Power Supplies DC Choppers AC Motor Drives Uninterruptible Power Supplies High Speed Power Switching Applications DS99664A(4/18) IXTA86N20T Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) gfs Characteristic Values Min. Typ. Max VDS = 10V, ID = 0.5 • ID25, Note 1 46 Ciss Coss 78 tr td(off) tf pF 550 pF 73 pF 22 ns 24 ns 52 ns 29 ns 90 nC 30 nC 23 nC Resistive Switching Times VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 RG = 3.3 (External) Qg(on) Qgs VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 Qgd 0.27 C/W RthJC RthCS S 4500 VGS = 0V, VDS = 25V, f = 1MHz Crss td(on) IXTP86N20T IXTQ86N20T TO-220 TO-3P 0.50 0.25 C/W C/W Source-Drain Diode Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) IS VGS = 0V ISM Characteristic Values Min. Typ. Max 86 A Repetitive, pulse Width Limited by TJM 260 A VSD IF = IS, VGS = 0V, Note 1 1.5 V trr IF = 25A, -di/dt = 100A/μs,VR = 100V 140 ns Note 1. Pulse test, t  300s, duty cycle, d 2%. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,860,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123B1 6,306,728B1 6,404,065B1 6,534,343 6,583,505 6,683,344 6,710,405B2 6,710,463 6,727,585 7,005,734B2 6,759,692 7,063,975B2 6,771,478B2 7,071,537 7,157,338B2 IXTA86N20T o o Fig. 2. Extended Output Characteristics@ TJ = 25 C Fig. 1. Output Characteristics @ TJ = 25 C 220 90 VGS = 10V 8V 7V 80 70 VGS = 10V 8V 200 180 160 60 I D - Amperes I D - Amperes IXTP86N20T IXTQ86N20T 6V 50 40 30 140 7V 120 100 6V 80 60 20 40 5V 10 5V 20 0 0 0 0.4 0.8 1.2 1.6 2 2.4 2.8 0 5 10 90 3.6 VGS = 10V 8V 7V RDS(on) - Normalized 6V I D - Amperes VGS = 10V 3.2 70 60 50 40 30 20 2.8 I D = 86A 2.4 2.0 I D = 43A 1.6 1.2 5V 0.8 10 0 0.4 0 1 2 3 4 5 6 -50 -25 0 25 50 75 100 125 150 175 TJ - Degrees Centigrade VDS - Volts Fig. 5. RDS(on) Normalized to ID = 43A Value vs. Drain Current Fig. 6. Drain Current vs. Case Temperature 3.6 100 VGS = 10V 3.2 90 o TJ = 125 C 80 2.8 70 I D - Amperes RDS(on) - Normalized 20 Fig. 4. RDS(on) Normalized to ID = 43A Value vs. Junction Temperature o Fig. 3. Output Characteristics @ TJ = 125 C 80 15 VDS - Volts VDS - Volts 2.4 2.0 60 50 40 30 1.6 20 o TJ = 25 C 1.2 10 0.8 0 0 20 40 60 80 100 120 140 I D - Amperes © 2018 IXYS CORPORATION, All Rights Reserved 160 180 200 220 -50 -25 0 25 50 75 100 TC - Degrees Centigrade 125 150 175 IXTA86N20T IXTP86N20T IXTQ86N20T Fig. 8. Transconductance Fig. 7. Input Admittance 160 120 o TJ = - 40 C 140 100 o 25 C g f s - Siemens I D - Amperes 120 100 80 o TJ = 125 C 60 o 25 C o 125 C 60 40 o - 40 C 40 80 20 20 0 0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0 0 20 40 60 80 VGS - Volts 120 140 160 180 200 Fig. 10. Gate Charge Fig. 9. Forward Voltage Drop of Intrinsic Diode 10 240 VDS = 100V 9 200 I D = 25A 8 I G = 10mA 7 160 VGS - Volts I S - Amperes 100 I D - Amperes 120 o TJ = 125 C 6 5 4 80 3 o TJ = 25 C 2 40 1 0 0 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 0 10 20 VSD - Volts Fig. 11. Capacitance 40 50 60 70 80 90 Fig. 12. Maximum Transient Thermal Impedance 1 10,000 C iss 1,000 Z (th)JC - K / W Capacitance - PicoFarads 30 QG - NanoCoulombs C oss 0.1 100 C rss f = 1 MHz 10 0 5 10 15 20 25 30 35 40 VDS - Volts IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 0.01 0.0001 0.001 0.01 0.1 Pulse Width - Seconds 1 10 IXTA86N20T Fig. 13. Resistive Turn-on Rise Time vs. Junction Temperature Fig. 14. Resistive Turn-on Rise Time vs. Drain Current 26 27 RG = 3.3Ω 24 o 20 18 I D = 86A 16 14 TJ = 25 C 23 VDS = 100V t r - Nanoseconds t r - Nanoseconds 25 VGS = 15V 22 I D = 43A 21 19 RG = 3.3Ω 17 VDS = 100V VGS = 15V 15 13 12 o TJ = 125 C 11 10 9 25 35 45 55 65 75 85 95 105 115 125 20 30 40 50 TJ - Degrees Centigrade 24 td(on) o t r - Nanoseconds 22 22 21 I D = 86A I D = 43A 18 20 32 66 30 64 28 62 26 24 58 22 56 I D = 86A 20 tf 19 9 11 13 td(off) 25 15 35 45 55 tf 58 td(off) RG = 3.3Ω, VGS = 15V 56 VDS = 100V 54 18 52 16 50 150 I D = 43A, 86A 50 130 40 110 30 90 20 70 48 o TJ = 25 C 12 46 30 t f - Nanoseconds 60 20 48 125 t d ( o f f ) - Nanoseconds 62 26 14 115 o VDS = 100V t d(off) - Nanoseconds o TJ = 125 C o 105 td(off) TJ = 125 C, VGS = 15V 60 64 TJ = 125 C 95 170 tf 66 30 20 85 70 68 o TJ = 25 C 22 75 Fig. 18. Resistive Turn-off Switching Times vs. Gate Resistance 34 24 65 TJ - Degrees Centigrade Fig. 17. Resistive Turn-off Switching Times vs. Drain Current 28 50 VDS = 100V RG - Ohms 32 52 14 18 7 54 RG = 3.3Ω, VGS = 15V 16 10 60 I D = 43A 18 14 5 90 t d ( o f f ) - Nanoseconds 26 t d ( o n ) - Nanoseconds VDS = 100V 3 80 23 TJ = 125 C, VGS = 15V t f - Nanoseconds 30 70 Fig. 16. Resistive Turn-off Switching Times vs. Junction Temperature 34 tr 60 I D - Amperes Fig. 15. Resistive Turn-on Switching Times vs. Gate Resistance t f - Nanoseconds IXTP86N20T IXTQ86N20T 40 50 60 70 I D - Amperes © 2018 IXYS CORPORATION, All Rights Reserved 80 90 10 50 3 4 5 6 7 8 9 10 11 12 13 14 15 RG - Ohms IXYS REF: T_86N20T(6E) 6-30-06 IXTA86N20T TO-263 Outline 1 - Gate 2,4 - Drain 3 - Source TO-220 Outline 1 - Gate 2,4 - Drain 3 - Source TO-3P Outline 1 - Gate 2,4 - Drain 3 - Source IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXTP86N20T IXTQ86N20T Disclaimer Notice - Information furnished is believed to be accurate and reliable. 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