IXTA88N085T7

Preliminary Technical Information IXTA88N085T7 TrenchMVTM Power MOSFET VDSS ID25 = = RDS(on) ≤ 85 V 88 A Ω 11 mΩ N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions Maximum Ratings V DSS VDGR TJ = 25°C to 175°C TJ = 25°C to 175°C; RGS = 1 MΩ VGSM 85 85 V V Transient ± 20 V ID25 IDM TC = 25°C TC = 25°C, pulse width limited by TJM 88 240 A A IAR EAS TC = 25°C TC = 25°C 25 500 A mJ dv/dt IS ≤ IDM, di/dt ≤ 100 A/μs, VDD ≤ VDSS 3 V/ns 230 W -55 ... +175 175 -40 ... +175 °C °C °C 300 260 °C °C 3 g TJ ≤ 175°C, RG = 5 Ω PD TC = 25°C TJ TJM Tstg TL TSOLD 1.6 mm (0.062 in.) from case for 10 s Plastic body for 10 seconds Weight TO-263 (7-lead) (IXTA..7) 1 7 Pin-out:1 - Gate 2, 3 - Source 4 - NC (cut) 5,6,7 - Source TAB (8) - Drain (TAB) Features Ultra-low On Resistance Unclamped Inductive Switching (UIS) rated Low package inductance - easy to drive and to protect 175 °C Operating Temperature Advantages Easy to mount Space savings High power density Symbol Test Conditions (TJ = 25°C unless otherwise specified) Characteristic Values Min. Typ. Max. BV DSS VGS = 0 V, ID = 250 μA 85 VGS(th) VDS = VGS, ID = 100 μA 2.0 IGSS VGS = ± 20 V, VDS = 0 V IDSS VDS = VDSS VGS = 0 V RDS(on) V TJ = 150°C VGS = 10 V, ID = 25 A, Note 1 8 4.0 V ± 200 nA 2 150 μA μA 11 mΩ Applications Automotive - Motor Drives - 42V Power Bus - ABS Systems DC/DC Converters and Off-line UPS Primary Switch for 24V and 48V Systems High Current Switching Applications DS99641 (11/06) © 2006 IXYS CORPORATION All rights reserved IXTA88N085T7 Symbol Test Conditions Characteristic Values (TJ = 25°C unless otherwise specified) gfs VDS= 10 V; ID = 0.5 ID25, Note 1 Ciss Coss TO-263 (7-lead) (IXTA...7) Outline Min. Typ. 40 63 S 3140 pF VGS = 0 V, VDS = 25 V, f = 1 MHz Crss Max. 484 pF 105 pF td(on) Resistive Switching Times 20 ns tr VGS = 10 V, VDS = 0.5 VDSS, ID = 25 A 54 ns td(off) RG = 5 Ω (External) 42 ns tf 29 ns Qg(on) 69 nC Qgs VGS= 10 V, VDS = 0.5 VDSS, ID = 25 A Qgd 18 nC 15 nC 0.65 °C/W RthJC Pins: 1 - Gate 2, 3 - Source 4 - Drain 5,6,7 - Source Tab (8) - Drain Source-Drain Diode Symbol Test Conditions TJ = 25°C unless otherwise specified) IS VGS = 0 V ISM Characteristic Values Min. Typ. Max. 88 A Pulse width limited by TJM 240 A VSD IF = 25 A, VGS = 0 V, Note 1 1.0 V t rr IF = 25 A, -di/dt = 100 A/μs 90 ns VR = 40 V, VGS = 0 V Notes: 1. Pulse test, t ≤ 300 μs, duty cycle d ≤ 2 %; PRELIMINARYTECHNICALINFORMATION The product presented herein is under development. The Technical Specifications offered are derived from data gathered during objective characterizations of preliminary engineering lots; but also may yet contain some information supplied during a preproduction design evaluation. IXYS reserves the right to change limits, test conditions, and dimensions without notice. IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by 4,835,592 one or moreof the following U.S. patents: 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,710,405B2 6,710,463 6,727,585 6,759,692 6771478 B2 7,005,734 B2 7,063,975 B2 7,071,537 IXTA88N085T7 Fig. 1. Output Characteristics @ 25ºC Fig. 2. Extended Output Characteristics @ 25ºC 90 320 80 70 8V 240 60 50 40 9V 280 I D - Amperes I D - Amperes VGS = 10V V GS = 10V 9V 8V 7V 6V 30 200 7V 160 120 6V 80 20 5V 40 10 0 5V 0 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0 0.9 2 4 6 12 14 16 18 2.6 90 VGS = 10V 9V 8V 7V 70 2.2 60 50 6V 40 VGS = 10V 2.4 RDS(on) - Normalized 80 I D - Amperes 10 Fig. 4. RDS(on) Normalized to ID = 44A Value vs. Junction Temperature Fig. 3. Output Characteristics @ 150ºC 30 5V 20 2.0 1.8 I D = 88A 1.6 I D = 44A 1.4 1.2 1.0 10 0.8 0 0.6 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 -50 -25 0 25 50 75 100 125 150 175 TJ - Degrees Centigrade VDS - Volts Fig. 5. RDS(on) Normalized to ID = 44A Value vs. Drain Current Fig. 6. Drain Current vs. Case Temperature 3.2 100 VGS = 10V 15V - - - - 3 90 TJ = 175ºC 2.8 80 2.6 External Lead Current Limit TO-263 & TO-220 70 2.4 I D - Amperes RDS(on) - Normalized 8 VDS - Volts VDS - Volts 2.2 2 1.8 1.6 50 40 30 TJ = 25ºC 1.4 60 20 1.2 10 1 0 0.8 0 40 80 120 160 200 I D - Amperes © 2006 IXYS CORPORATION All rights reserved 240 280 -50 -25 0 25 50 75 100 TC - Degrees Centigrade 125 150 175 IXTA88N085T7 Fig. 8. Transconductance Fig. 7. Input Admittance 160 90 80 140 TJ = -40ºC 25ºC 150ºC 70 25ºC g f s - Siemens ID - Amperes 120 TJ = - 40ºC 100 80 60 60 50 150ºC 40 30 40 20 20 10 0 0 3 3.5 4 4.5 5 5.5 6 6.5 0 7 20 40 60 VGS - Volts 80 100 120 140 160 I D - Amperes Fig. 9. Forward Voltage Drop of Intrinsic Diode Fig. 10. Gate Charge 200 10 180 9 160 8 140 7 VDS = 43V VGS - Volts I S - Amperes I D = 25A 120 100 80 60 I G = 10mA 6 5 4 3 TJ = 150ºC 2 40 TJ = 25ºC 20 1 0 0 0.4 0.5 0.6 0.7 0.8 0.9 1 1.1 1.2 1.3 0 1.4 5 10 15 20 25 30 35 40 45 50 55 60 65 70 QG - NanoCoulombs VSD - Volts Fig. 12. Maximum Transient Thermal Impedance Fig. 11. Capacitance 10,000 1.00 Capacitance - PicoFarads f = 1 MHz C iss Z(th)JC - ºC / W 1,000 C oss 100 0.10 C rss 10 0 5 10 15 20 25 30 35 40 VDS - Volts IXYS reserves the right to change limits, test conditions, and dimensions. 0.01 0.0001 0.001 0.01 0.1 Pulse Width - Seconds 1 10 IXTA88N085T7 Fig. 14. Resistive Turn-on Rise Time vs. Drain Current Fig. 13. Resistive Turn-on Rise Time vs. Junction Temperature 70 70 RG = 5Ω 65 65 VGS = 10V 60 60 55 t r - Nanoseconds t r - Nanoseconds VDS = 44V 50 45 40 I D = 40A 35 30 TJ = 25ºC 55 50 RG = 5Ω 45 VGS = 10V 40 VDS = 44V 35 30 I D = 20A 25 25 20 20 TJ = 125ºC 15 15 25 35 45 55 65 75 85 95 105 115 20 125 22 24 26 TJ - Degrees Centigrade Fig. 15. Resistive Turn-on Switching Times vs. Gate Resistance td(on) - - - - TJ = 125ºC, VGS = 10V 33 70 31 60 29 50 27 40 25 30 23 20 21 10 19 7 9 46 I D = 40A 30 43 29 40 VDS = 44V 27 25 35 45 VDS = 44V 50 30 46 29 42 TJ = 25ºC 38 27 34 28 30 85 95 105 115 34 125 32 34 36 I D - Amperes © 2006 IXYS CORPORATION All rights reserved 38 40 220 td(off) - - - - 120 tf 110 TJ = 125ºC, V GS = 10V VDS = 44V 100 200 I D = 20A 180 160 90 140 80 120 70 I D = 40A 100 60 80 50 60 40 40 30 20 20 t d ( o f f ) - Nanoseconds 31 t d ( o f f ) - Nanoseconds t f - Nanoseconds 54 t f - Nanoseconds RG = 5Ω, VGS = 10V 26 75 130 58 24 65 Fig. 18. Resistive Turn-off Switching Times vs. Gate Resistance td(off) - - - - tf 22 55 TJ - Degrees Centigrade 33 TJ = 125ºC 37 RG = 5Ω, V GS = 10V Fig. 17. Resistive Turn-off Switching Times vs. Drain Current 32 td(off) - - - - tf 28 RG - Ohms 20 40 49 I D = 20A 31 11 13 15 17 19 21 23 25 27 29 31 33 28 38 t d ( o f f ) - Nanoseconds 35 80 5 36 52 32 37 V DS = 44V 90 34 39 I D = 40A, 20A t f - Nanoseconds tr 32 33 t d ( o n ) - Nanoseconds t r - Nanoseconds 41 100 30 Fig. 16. Resistive Turn-off Switching Times vs. Junction Temperature 120 110 28 I D - Amperes 0 5 7 9 11 13 15 17 19 21 23 25 27 29 31 33 RG - Ohms IXYS REF: T_88N085T (3V) 9-15-06-A.xls Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. 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