IXTA90N055T2

IXTI90N055T2 IXTY90N055T2 IXTA90N055T2 IXTP90N055T2 TrenchT2TM Power MOSFET N-Channel Enhancement Mode Avalanche Rated VDSS ID25 RDS(on) = =  55V 90A  8.4m TO-252 (IXTY) G TO-262 (IXTI) S D (Tab) G D S TO-263 (IXTA) D (Tab) G S Symbol Test Conditions Maximum Ratings VDSS TJ = 25C to 175C 55 V VDGR TJ = 25C to 175C, RGS = 1M 55 V VGSM Transient 20 V ID25 IDM TC = 25C TC = 25C, Pulse Width Limited by TJM 90 230 A A IA TC = 25C 50 A EAS TC = 25C 300 mJ PD TC = 25C 150 W D (Tab) TO-220 (IXTP) G D S G = Gate S = Source -55 ... +175  C Features TJM 175  C  Tstg -55 ... +175  C TJ TL TSOLD Maximum Lead Temperature for Soldering 1.6 mm (0.062in.) from Case for 10s FC Md Mounting Force (TO-263) Mounting Torque (TO-220) Weight TO-252 TO-262 (Lead) TO-263 TO-220 300 260 °C °C 10..65 / 2.2..14.6 1.13 / 10 N/lb Nm/lb.in 0.35 0.40 2.50 3.00 g g g g      Advantages High Power Density Easy to Mount Space Savings  Characteristic Values Min. Typ. Max. BVDSS VGS = 0V, ID = 250A 55 VGS(th) VDS = VGS, ID = 250A 2.0 IGSS VGS =  20V, VDS = 0V IDSS VDS = VDSS, VGS = 0V RDS(on) VGS = 10V, ID = 25A, Notes 1 & 2  V Applications 4.0 V             200 nA 2 A 200 A TJ = 150C 7.0 8.4 m D = Drain Tab = Drain International Standard Packages Avalanche Rated Low Package Inductance Fast Intrinsic Rectifier 175°C Operating Temperature High Current Handling Capability ROHS Compliant High Performance Trench Technology for extremely low RDS(on)   Symbol Test Conditions (TJ = 25C Unless Otherwise Specified) D (Tab) Automotive Engine Control Synchronous Buck Converter (for Notebook SystemPower & General Purpose Point & Load)  DC/DC Converters  High Current Switching Applications  Power Train Management  Distributed Power Architecture   © 2018 IXYS CORPORATION, All Rights Reserved DS99956D(11/18) IXTI90N055T2 IXTY90N055T2 IXTA90N055T2 IXTP90N055T2 Symbol Test Conditions (TJ = 25C Unless Otherwise Specified) Characteristic Values Min. Typ. Max. gfs 25 VDS = 10V, ID = 45A, Note 1 Ciss Coss VGS = 0V, VDS = 25V, f = 1MHz Crss td(on) tr td(off) tf Resistive Switching Times VGS = 10V, VDS = 30V, ID = 25A RG = 5 (External) Qg(on) Qgs VGS = 10V, VDS = 30V, ID = 25A Qgd 43 S 2770 pF 420 pF 102 pF 19 ns 21 ns 39 ns 19 ns 42 nC 14 nC 8.5 nC 1.00 C/W RthJC RthCS TO-220 0.50 C/W Source-Drain Diode Symbol Test Conditions (TJ = 25C Unless Otherwise Specified) Characteristic Values Min. Typ. Max. IS VGS = 0V ISM Repetitive, Pulse Width Limited by TJM VSD IF = 25A, VGS = 0V, Note 1 trr IRM QRM 0.85 IF = 45A, VGS = 0V, -di/dt = 100A/s, VR = 27V 90 A 360 A 1.00 V 37 ns 2.2 A 40 nC Notes: 1. Pulse test, t  300s; duty cycle, d  2%. 2. On through-hole packages, RDS(on) Kelvin test contact location must be 5mm or less from the package body. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,860,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123B1 6,306,728B1 6,404,065B1 6,534,343 6,583,505 6,683,344 6,710,405B2 6,710,463 6,727,585 7,005,734B2 6,759,692 7,063,975B2 6,771,478B2 7,071,537 7,157,338B2 IXTI90N055T2 IXTY90N055T2 IXTA90N055T2 IXTP90N055T2 o o Fig. 1. Output Characteristics @ TJ = 25 C Fig. 2. Extended Output Characteristics @ TJ = 25 C 300 90 VGS = 15V 10V 9V 8V 80 70 VGS = 15V 7V I D - Amperes I D - Amperes 60 50 40 30 6V 250 10V 200 9V 150 8V 7V 100 20 6V 50 5V 10 5V 0 0 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0 0.8 1 2 3 4 2.4 90 VGS = 15V 10V 9V 8V 2.2 I D - Amperes 60 7V 50 40 6V 30 8 9 10 11 12 VGS = 10V I D = 90A 1.8 1.6 I D = 45A 1.4 1.2 1.0 20 10 0.8 5V 0 0.6 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 -50 1.6 -25 0 VDS - Volts 25 50 75 100 125 150 175 TJ - Degrees Centigrade Fig. 5. RDS(on) Normalized to ID = 45A Value vs. Drain Current 3.0 Fig. 6. Drain Current vs. Case Temperature 100 o TJ = 175 C VGS = 10V 15V 2.6 90 80 70 2.2 I D - Amperes RDS(on) - Normalized 7 2.0 RDS(on) - Normalized 70 6 Fig. 4. RDS(on) Normalized to ID = 45A Value vs. Junction Temperature o Fig. 3. Output Characteristics @ TJ = 150 C 80 5 VDS - Volts VDS - Volts 1.8 1.4 o TJ = 25 C 60 50 40 30 20 1.0 10 0.6 0 0 50 100 150 200 I D - Amperes © 2018 IXYS CORPORATION, All Rights Reserved 250 300 -50 -25 0 25 50 75 100 TC - Degrees Centigrade 125 150 175 IXTI90N055T2 IXTY90N055T2 IXTA90N055T2 IXTP90N055T2 Fig. 7. Input Admittance Fig. 8. Transconductance 90 o TJ = - 40 C 60 80 70 50 g f s - Siemens I D - Amperes o 25 C 60 50 40 o TJ = 150 C 30 o 25 C o 150 C 30 20 o - 40 C 20 40 10 10 0 0 3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 0 7.0 10 20 30 40 VGS - Volts 60 70 80 90 100 40 45 Fig. 10. Gate Charge Fig. 9. Forward Voltage Drop of Intrinsic Diode 270 10 240 9 VDS = 30V I D = 25A 8 210 I G = 10mA 7 180 VGS - Volts I S - Amperes 50 I D - Amperes 150 120 90 o TJ = 150 C 6 5 4 3 60 o TJ = 25 C 2 30 1 0 0 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4 0 1.5 5 10 15 20 25 30 35 QG - NanoCoulombs VSD - Volts Fig. 12. Forward-Bias Safe Operating Area Fig. 11. Capacitance 1,000 10,000 Ciss 100 1,000 I D - Amperes Capacitance - PicoFarads RDS(on) Limit Coss 100 25μs 100μs 1ms 10 Crss o TJ = 175 C o 10ms TC = 25 C Single Pulse f = 1 MHz 10 100ms 1 0 5 10 15 20 25 30 35 40 VDS - Volts IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 1 10 VDS - Volts 100 IXTI90N055T2 IXTY90N055T2 IXTA90N055T2 IXTP90N055T2 Fig. 13. Resistive Turn-on Rise Time vs. Junction Temperature Fig. 14. Resistive Turn-on Rise Time vs. Drain Current 24 23.0 RG = 5Ω ,VGS = 10V RG = 5ΩVGS = 10V 22.5 VDS = 30V 23 VDS = 30V 22 t r - Nanoseconds t r - Nanoseconds o TJ = 125 C I D = 45A 21 I D = 25A 22.0 21.5 21.0 o TJ = 25 C 20 20.5 20.0 19 25 35 45 55 65 75 85 95 105 115 25 125 27 29 31 33 Fig. 15. Resistive Turn-on Switching Times vs. Gate Resistance 30 td(on) tf 21.5 43 45 VDS = 30V 27 24 23 55 50 VDS = 30V 20.5 45 I D = 25A 20.0 19.5 40 35 I D = 45A 19.0 30 18.5 25 t d(off) - Nanoseconds 26 t f - Nanoseconds 21.0 I D = 25A, 45A td(off) RG = 5Ω, VGS = 10V t d(on) - Nanoseconds t r - Nanoseconds 41 60 31 22 19 20 15 4 6 8 10 12 14 16 18 18.0 20 25 35 45 55 RG - Ohms td(off) RG = 5Ω, VGS = 10V 62 48 54 20.0 40 o TJ = 125 C 19.5 36 o TJ = 25 C 19.0 32 18.5 28 18.0 24 25 27 29 31 33 35 85 95 105 115 20 125 37 39 I D - Amperes © 2018 IXYS CORPORATION, All Rights Reserved 41 43 45 80 tf td(off) 70 o TJ = 125 C, VGS = 10V I D = 25A VDS = 30V 46 60 38 50 30 40 I D = 45A 22 30 14 20 4 6 8 10 12 RG - Ohms 14 16 18 20 t d(off) - Nanoseconds 44 t d(off) - Nanoseconds VDS = 30V 52 t f - Nanoseconds tf 20.5 75 Fig. 18. Resistive Turn-off Switching Times vs. Gate Resistance 21.5 21.0 65 TJ - Degrees Centigrade Fig. 17. Resistive Turn-off Switching Times vs. Drain Current t f - Nanoseconds 39 22.0 o TJ = 125 C, VGS = 10V 28 37 Fig. 16. Resistive Turn-off Switching Times vs. Junction Temperature 35 tr 35 I D - Amperes TJ - Degrees Centigrade IXTI90N055T2 IXTY90N055T2 IXTA90N055T2 IXTP90N055T2 Fig. 19. Maximum Transient Thermal Impedance 10 Z (th )JC - K / W 1 0.1 0.01 0.00001 0.0001 0.001 0.01 0.1 1 10 Pulse Width - Seconds IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS REF: T_90N055T2 (V2) 7-10-18-C IXTI90N055T2 IXTY90N055T2 IXTA90N055T2 IXTP90N055T2 Leaded 262 (IXTI) Outline 4 1 2 3 1 - Gate 2 - Drain 3 - Source TO-252 Outline TO-263 Outline TO-220 Outline A E C2 L1 L2 2 A1 3 A oP D1 D 1 E E1 A1 H1 Q 4 H D2 D D1 b b2 L3 e c 0.43 [11.0] E1 e A2 EJECTOR 0 PIN L1 L 0.34 [8.7] 0.66 [16.6] A2 1 - Gate 2,4 - Drain 3 - Source © 2018 IXYS CORPORATION, All Rights Reserved 1 - Gate 2,4 - Drain 3 - Source 0.20 [5.0] 0.10 [2.5] 0.12 [3.0] 0.06 [1.6] e c e1 3X b 3X b2 1 - Gate 2,4 - Drain 3 - Source Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics.