Advance Technical Information
TrenchMVTM
Power MOSFET
IXTA98N075T
IXTP98N075T
VDSS
ID25
=
=
RDS(on) ≤
75
V
98
A
Ω
10 mΩ
N-Channel Enhancement Mode
Symbol
Test Conditions
Maximum Ratings
VDSS
TJ = 25°C to 175°C
75
V
VDGR
TJ = 25°C to 175°C; RGS = 1 MΩ
75
V
VGSM
Transient
± 20
V
ID25
TC = 25°C
98
A
ILRMS
Package Current Limit (RMS):
75
A
IDM
TC = 25°C, pulse width limited by TJM
280
A
dv/dt
IS ≤ IDM, di/dt ≤ 100 A/μs, VDD ≤ VDSS
TJ ≤ 175°C, RG = 5 Ω
5
V/ns
TC = 25°C
25
A
EAS
TC = 25°C
600
mJ
Pd
TC = 25°C
230
W
-55 ... +175
°C
TJ
TJM
175
°C
Tstg
-40 ... +175
°C
TL
1.6 mm (0.062 in.) from case for 10 s
300
°C
TSOLD
Plastic body for 10 seconds
260
°C
Md
Mounting torque (TO-220)
Weight
TO-220
TO-263
1.13 / 10 Nm/lb.in.
3.0
2.5
BVDSS
VGS = 0 V, ID = 250 μA
75
VGS(th)
VDS = VGS, ID = 100 μA
2.0
IGSS
VGS = ±20 V, VDS = 0 V
IDSS
VDS = VDSS
VGS = 0 V
RDS(on)
g
g
Characteristic Values
Min. Typ.
Max.
TJ = 150°C
VGS = 10 V, ID = 25 A, Notes 1, 2
TAB
G
S
TO-220 (IXTP)
TAB
G
IAR
Symbol
Test Conditions
(TJ = 25°C unless otherwise specified)
TO-263 (IXTA)
V
4.0
V
± 200
nA
2
150
μA
μA
10
mΩ
S
G = Gate
S = Source
D = Drain
TAB = Drain
Features
Ultra-low On Resistance
Unclamped Inductive Switching (UIS)
rated
Low package inductance
- easy to drive and to protect
175 °C Operating Temperature
Advantages
Easy to mount
Space savings
High power density
Applications
Automotive
- Motor Drives
- 42V Power Bus
- ABS Systems
DC/DC Converters and Off-line UPS
Primary Switch for 24V and 48V
Systems
High Current Switching
Applications
DS99541(04/07)
© 2007 IXYS CORPORATION, All rights reserved
IXTA98N075T IXTP98N075T
Symbol
Test Conditions
(TJ = 25°C unless otherwise specified)
gfs
Characteristic Values
Min.
Typ.
Max.
VDS= 10 V; ID = 0.5 ID25, Note 1
38
Ciss
Coss
TO-263 (IXTA) Outline
64
S
3100
pF
520
pF
125
pF
VGS = 0 V, VDS = 25 V, f = 1 MHz
Crss
td(on)
Resistive Switching Times
20
ns
tr
VGS = 10 V, VDS = 0.5 VDSS, ID = 25 A
42
ns
td(off)
RG = 5 Ω (External)
42
ns
27
ns
tf
Qg(on)
Qgs
VGS= 10 V, VDS = 0.5 VDSS, ID = 25 A
Qgd
nC
18
nC
Dim.
Millimeter
Min.
Max.
Inches
Min. Max.
15
nC
A
A1
4.06
2.03
4.83
2.79
.160
.080
.190
.110
0.65°C/W
b
b2
0.51
1.14
0.99
1.40
.020
.045
.039
.055
°C/W
c
c2
0.46
1.14
0.74
1.40
.018
.045
.029
.055
D
D1
8.64
7.11
9.65
8.13
.340
.280
.380
.320
E
E1
e
9.65
6.86
2.54
10.29
8.13
BSC
.380
.270
.100
.405
.320
BSC
L
L1
L2
L3
L4
14.61
2.29
1.02
1.27
0
15.88
2.79
1.40
1.78
0.38
.575
.090
.040
.050
0
.625
.110
.055
.070
.015
R
0.46
0.74
.018
.029
0.50
Source-Drain Diode
Symbol
Test ConditionsCharacteristic Values
(TJ = 25°C unless otherwise specified)
Min.
2 - Drain
4, TAB - Drain
68
RthJC
RthCS
Pins: 1 - Gate
3 - Source
Typ.
Max.
IS
VGS = 0 V
98
A
ISM
Repetitive
280
A
VSD
IF = IS, VGS = 0 V, Note 1
1.5
V
trr
IF = 49 A, -di/dt = 100 A/μs
TO-220 (IXTP) Outline
50
ns
VR = 40 V, VGS = 0 V
Note 1. Pulse test, t ≤ 300 μs, duty cycle, d ≤ 2 %;
2. On through-hole packages, RDS(on) Kelvin test contact
location is 5 mm or less from the package body.
Pins:
1 - Gate
2 - Drain
3 - Source 4, TAB - Drain
ADVANCE TECHNICAL INFORMATION
The product presented herein is under development. The Technical Specifications offered are
derived from a subjective evaluation of the design, based upon prior knowledge and experience,
and constitute a "considered reflection" of the anticipated result. IXYS reserves the right to change
limits, test conditions, and dimensions without notice.
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered
4,835,592
by one or moreof the following U.S. patents: 4,850,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1
6,534,343
6,583,505
6,683,344
6,727,585
7,005,734 B2
6,710,405 B2 6,759,692
7,063,975 B2
6,710,463
6,771,478 B2 7,071,537
7,157,338B2
Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently
evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for,
and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics.