IXTB30N100L

LinearTM Power MOSFET w/ Extended FBSOA IXTB30N100L VDSS ID25 RDS(on) D N-Channel Enhancement Mode Avalanche Rated = = ≤ 1000V 30A Ω 450mΩ G PLUS264TM S G Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 1000 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ 1000 V VGSS Continuous ±30 V VGSM Transient ±40 V ID25 TC = 25°C 30 A IDM TC = 25°C, Pulse Width Limited by TJM 70 A IA EAS TC = 25°C TC = 25°C 30 2 A J PD TC = 25°C 800 W -55 ... +150 150 -55 ... +150 °C °C °C 300 260 °C °C 30..120/6.7..27 N/lb. 10 g TJ TJM Tstg TL TSOLD 1.6mm (0.062 in.) from Case for 10s Plastic Body for 10s FC Mounting Force Weight D S G = Gate S = Source Tab D = Drain Tab = Drain Features • Designed for Linear Operation • Avalanche Rated • Molding Epoxy Meets UL94 V-0 Flammability Classification Advantages • Easy to Mount • Space Savings • High Power Density Applications Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max. BVDSS VGS = 0V, ID = 1mA 1000 VGS(th) VDS = VGS, ID = 250μA 3.0 IGSS VGS = ±30V, VDS = 0V IDSS VDS = VDSS, VGS = 0V RDS(on) VGS = 20V, ID = 0.5 • IDSS, Note 1 V 5.5 • • • • • • Programmable Loads Current Regulators DC-DC Converters Battery Chargers DC Choppers Temperature and Lighting Controls V ±200 nA TJ = 125°C © 2012 IXYS CORPORATION, All Rights Reserved 50 μA 1 mA 450 mΩ DS99501C(11/12) IXTB30N100L Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) gfs Characteristic Values Min. Typ. Max. VDS = 20V, ID = 0.5 • IDSS, Note 1 6 10 Ciss Coss VGS = 0V, VDS = 25V, f = 1MHz Crss td(on) Resistive Switching Times tr VGS = 15V, VDS = 0.5 • VDSS, ID = 0.5 • IDSS td(off) RG = 2Ω (External) tf Qg(on) Qgs VGS = 20V, VDS = 0.5 • VDSS, ID = 0.5 • IDSS Qgd 15 PLUS264TM (IXTB) Outline S 13.7 nF 980 pF 115 pF 36 ns 70 ns 100 ns 78 ns 545 nC 86 nC 165 nC RthJC 0.156 °C/W RthCS 0.13 °C/W Safe-Operating-Area Specification Symbol Test Conditions Characteristic Values Min. Typ. Max. SOA VDS = 600V, ID = 0.5A, TC = 90°C 300 W Source-Drain Diode Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) IS VGS = 0V ISM VSD trr Note Characteristic Values Min. Typ. Max. 30 A Repetitive, Pulse Width Limited by TJM 120 A IF = IS, VGS = 0V, Note 1 1.5 V 1000 IF = IS, -di/dt = 100A/μs VR = 100V, VGS = 0V ns 1. Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,860,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 IXTB30N100L Fig. 2. Extended Output Characteristics @ T J = 25ºC Fig. 1. Output Characteristics @ T J = 25ºC 70 30 VGS = 20V 14V 12V 25 10V 50 20 ID - Amperes ID - Amperes VGS = 20V 14V 60 9V 15 12V 40 30 10V 8V 10 20 9V 5 7V 10 6V 0 0 1 2 3 4 5 6 7 8 0 9 10 0 5 10 15 20 25 30 VDS - Volts VDS - Volts Fig. 3. Output Characteristics @ T J = 125ºC Fig. 4. RDS(on) Normalized to ID = 15A Value vs. Junction Temperature 30 3.0 VGS = 20V 12V 10V VGS = 20V 2.6 20 R DS(on) - Normalized 25 ID - Amperes 8V 7V 9V 15 8V 10 7V 5 2.2 I D = 30A 1.8 I D = 15A 1.4 1.0 0.6 6V 0 0.2 0 2 4 6 8 10 12 14 16 18 20 22 24 -50 -25 0 25 50 75 100 VDS - Volts TJ - Degrees Centigrade Fig. 5. RDS(on) Normalized to ID = 15A Value vs. Drain Current Fig. 6. Maximum Drain Current vs. Case Temperature 125 150 125 150 35 2.6 VGS = 20V 2.4 TJ = 125ºC 30 25 2.0 ID - Amperes R DS(on) - Normalized 2.2 1.8 1.6 1.4 TJ = 25ºC 20 15 10 1.2 5 1.0 0.8 0 0 10 20 30 40 ID - Amperes © 2012 IXYS CORPORATION, All Rights Reserved 50 60 70 -50 -25 0 25 50 75 TC - Degrees Centigrade 100 IXTB30N100L Fig. 7. Input Admittance Fig. 8. Transconductance 45 22 40 20 TJ = - 40ºC 18 35 25ºC 30 25 g f s - Siemens ID - Amperes 16 TJ = 125ºC 25ºC - 40ºC 20 15 125ºC 14 12 10 8 6 10 4 5 2 0 0 4 5 6 7 8 9 10 11 0 5 10 15 20 VGS - Volts 25 30 35 40 45 ID - Amperes Fig. 9. Forward Voltage Drop of Intrinsic Diode Fig. 10. Gate Charge 100 20 90 18 80 16 70 14 VDS = 500V I D = 15A VGS - Volts IS - Amperes I G = 10mA 60 50 40 TJ = 125ºC 30 12 10 8 6 TJ = 25ºC 20 4 10 2 0 0 0.4 0.5 0.6 0.7 0.8 0.9 1 0 1.1 50 100 VSD - Volts 150 200 250 300 350 400 450 500 550 QG - NanoCoulombs Fig. 11. Capacitance Fig. 12. Maximum Transient Thermal Impedance 100,000 1 10,000 Ciss Z(th)JC - ºC / W Capacitance - PicoFarads f = 1 MHz 1,000 Coss 0.1 0.01 100 Crss 10 0 5 10 15 20 25 30 35 40 VDS - Volts IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 0.001 0.0001 0.001 0.01 0.1 Pulse Width - Seconds 1 10 IXTB30N100L Fig. 13. Forward-Bias Safe Operating Area Fig. 14. Forward-Bias Safe Operating Area @ T C = 25ºC @ T C = 90ºC 100 100 RDS(on) Limit 25µs RDS(on) Limit 25µs 100µs 100µs 10 10 ID - Amperes ID - Amperes 1ms 10ms 1ms 10ms 1 1 DC TJ = 150ºC TJ = 150ºC TC = 25ºC Single Pulse TC = 90ºC Single Pulse 0.1 DC 0.1 10 100 1000 VDS - Volts © 2012 IXYS CORPORATION, All Rights Reserved 10000 10 100 1000 10000 VDS - Volts IXYS REF: T_30N100L(9N)11-27-12-B Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics.