IXTB62N50L

LinearTM Power MOSFET w/Extended FBSOA IXTB62N50L VDSS ID25 RDS(on) N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode = 500V = 62A ≤ 100mΩ Ω PLUS264TM Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 500 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ 500 V VGSS Continuous ± 30 V VGSM Transient ± 40 V ID25 TC = 25°C 62 A IDM TC = 25°C, Pulse Width Limited by TJM 150 A IA TC = 25°C 80 A EAS TC = 25°C 5 J PD TC = 25°C 800 W -55 ... +150 °C TJ G TJM 150 °C Tstg -55 ... +150 °C TL 1.6mm (0.062 in.) from Case for 10s 300 °C TSOLD Plastic Body for 10s 260 °C FC Mounting Force 30..120/6.7..27 N/lb. 10 g Weight D S G = Gate S = Source Tab D = Drain Tab = Drain Features z z z z Fast Intrinsic Diode Avalanche Rated Low RDS(ON) and QG Low Package Inductance Advantages z z z High Power Density Easy to Mount Space Savings Applications Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max. BVDSS VGS = 0V, ID = 1mA 500 VGS(th) VDS = VGS, ID = 250μA 3.0 IGSS VGS = ± 30V, VDS = 0V IDSS VDS = VDSS, VGS = 0V RDS(on) VGS = 20V, ID = 0.5 • ID25, Note 1 z z z V z z TJ = 125°C © 2011 IXYS CORPORATION, All Rights Reserved 5.5 V ± 200 nA z Programmable Loads DC-DC Converters Current Regulators Battery Chargers DC Choppers Temperature and Lighting Controls 50 μA 1 mA 100 mΩ DS99336B(11/11) IXTB62N50L Symbol Test Conditions (TJ = 25°C Unless Otherwise Specified) Characteristic Values Min. Typ. Max. gfs 10 VDS = 10V, ID = 0.5 • ID25, Note 1 15 Ciss Coss tr td(off) tf VGS = 0V, VDS = 25V, f = 1MHz VGS = 15V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 RG = 2Ω (External) VGS = 20V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 Qgd nF 1460 pF 210 pF 36 ns 85 ns 110 ns 75 ns 550 nC 115 nC 180 nC Resistive Switching Times Qg(on) Qgs S 11.5 Crss td(on) 20 PLUS264TM (IXTB) Outline 0.156 °C/W RthJC RthCS 0.15 °C/W Safe Operating Area Specification Symbol Test Conditions Characteristic Values Min. Typ. Max. SOA VDS = 400V, ID = 750mA, TC = 90°C 300 W Source-Drain Diode Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) IS VGS = 0V ISM Characteristic Values Min. Typ. Max. 62 A Repetitive, Pulse Width Limited by TJM 176 A VSD IF = IS, VGS = 0V, Note 1 1.5 V trr IF = IS, VGS = 0V 500 ns -di/dt = 100A/μs, VR = 100V Note 1. Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or moreof the following U.S. patents: 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 IXTB62N50L Fig. 1. Output Characteristics @ T J = 25ºC Fig. 2. Extended Output Characteristics @ T J = 25ºC VGS = 20V 16V 14V 60 120 50 12V 40 ID - Amperes ID - Amperes VGS = 20V 16V 140 30 10V 14V 100 80 60 12V 40 10V 20 9V 8V 7V 20 9V 10 8V 7V 0 0 1 2 3 4 0 5 6 0 2 4 6 8 10 12 14 16 18 20 VDS - Volts VDS - Volts Fig. 4. RDS(on) Normalized to ID = 31A Value vs. Junction Temperature Fig. 3. Output Characteristics @ T J = 125ºC 3.2 VGS = 20V 14V 60 VGS = 10V 2.8 12V R DS(on) - Normalized ID - Amperes 50 40 10V 30 9V 20 8V 10 0 2 4 6 8 10 I D = 62A 2.0 I D = 31A 1.6 1.2 0.8 7V 6V 0 2.4 0.4 12 14 -50 -25 0 25 50 75 100 VDS - Volts TJ - Degrees Centigrade Fig. 5. RDS(on) Normalized to ID = 31A Value vs. Drain Current Fig. 6. Maximum Drain Current vs. Case Temperature 125 150 125 150 70 3.0 VGS = 20V 50 2.2 ID - Amperes R DS(on) - Normalized 60 TJ = 125ºC 2.6 1.8 TJ = 25ºC 40 30 1.4 20 1.0 10 0 0.6 0 20 40 60 80 100 ID - Amperes © 2011 IXYS CORPORATION, All Rights Reserved 120 140 -50 -25 0 25 50 75 TC - Degrees Centigrade 100 IXTB62N50L Fig. 7. Input Admittance Fig. 8. Transconductance 100 30 TJ = - 40ºC 90 25 80 g f s - Siemens ID - Amperes 70 60 TJ = 125ºC 25ºC - 40ºC 50 40 30 20 25ºC 125ºC 20 15 10 5 10 0 0 4 5 6 7 8 9 10 11 12 13 14 0 10 20 30 40 VGS - Volts Fig. 9. Forward Voltage Drop of Intrinsic Diode 60 70 80 90 100 500 550 Fig. 10. Gate Charge 240 20 200 18 VDS = 250V 16 I G = 10mA I D = 31A TJ = 25ºC TJ = 125ºC 14 160 VGS - Volts IS - Amperes 50 ID - Amperes 120 80 12 10 8 6 4 40 2 0 0 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4 1.5 0 50 100 150 VSD - Volts 200 250 300 350 400 450 QG - NanoCoulombs Fig. 11. Capacitance Fig. 12. Maximum Transient Thermal Impedance 100,000 1 Ciss 10,000 Z(th)JC - ºC / W Capacitance - PicoFarads f = 1 MHz Coss 1,000 0.1 0.01 Crss 100 0 5 10 15 20 25 30 35 40 VDS - Volts IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 0.001 0.0001 0.001 0.01 Pulse Width - Second 0.1 1 IXTB62N50L Fig. 13. Forward-Bias Safe Operating Area Fig. 14. Forward-Bias Safe Operating Area @ T C = 25ºC @ T C = 90ºC 1000 1000 RDS(on) Limit RDS(on) Limit 25µs 100 100 25µs ID - Amperes ID - Amperes 100µs 1ms 10 10ms 100µs 10 1ms 10ms DC 1 1 TJ = 150ºC TJ = 150ºC TC = 25ºC Single Pulse TC = 90ºC Single Pulse DC 0.1 0.1 10 100 VDS - Volts © 2011 IXYS CORPORATION, All Rights Reserved 1,000 10 100 1,000 VDS - Volts IXYS REF: T_62N50L(9N) 11-04-11-B Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics.