IXTF02N450

Preliminary Technical Information IXTF02N450 High Voltage Power MOSFET VDSS ID25 = 4500V = 200mA   625 RDS(on) (Electrically Isolated Tab) ISOPLUS i4-PakTM N-Channel Enhancement Mode Symbol Test Conditions VDSS TJ = 25C to 150C Maximum Ratings 4500 V VDGR TJ = 25C to 150C, RGS = 1M 4500 V VGSS Continuous 20 V VGSM Transient 30 V ID25 TC = 25C 200 mA IDM TC = 25C, Pulse Width Limited by TJM 600 mA PD TC = 25C 78 W - 55 ... +150 150 - 55 ... +150 C C C 300 260 °C °C 20..120 / 4.5..27 N/lb. 4500 V~ 6 g TJ TJM Tstg TL TSOLD Maximum Lead Temperature for Soldering Plastic Body for 10s FC Mounting Force VISOL 50/60Hz, 1 Minute Weight 1 5 1 = Gate 2 = Source       VGS(th) VDS = VGS, ID = 250A IGSS VGS = 20V, VDS = 0V 100 nA IDSS VDS = 3.6kV, VGS = 0V VDS = 4.5kV VDS = 3.6kV 5 A 10 μA μA RDS(on) 4.0 Note 2, TJ = 125C VGS = 10V, ID = 10mA, Note 1 © 2013 IXYS CORPORATION, All Rights Reserved 6.5 15 625 V 5 = Drain Silicon Chip on Direct-Copper Bond (DCB) Substrate Isolated Mounting Surface 4500V~ Electrical Isolation Molding Epoxies meet UL 94 V-0 Flammability Classification Advantages  Characteristic Values Min. Typ. Max. Isolated Tab Features  Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) 2 High Voltage Package Easy to Mount Space Savings High Power Density Applications     High Voltage Power Supplies Capacitor Discharge Applications Pulse Circuits Laser and X-Ray Generation Systems  DS100499A(10/13) IXTF02N450 Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) gfs Characteristic Values Min. Typ. Max. VDS = 50V, ID = 50mA, Note 1 90 Ciss Coss VGS = 0V, VDS = 25V, f = 1MHz Crss ISOPLUS i4-PakTM (HV) Outline 150 mS 246 pF 19 pF 5.8 pF  76 td(on) Resistive Switching Times 17 ns 48 ns 28 ns tf VGS = 10V, VDS = 500V, ID = 0.5 • ID25 RG = 10 (External) Qg(on) Qgs D 143 ns 10.6 nC 3.3 nC 5.5 nC VGS = 10V, VDS = 1kV, ID = 0.5 • ID25 Qgd S U A2 T R 4 L1 2 3  Gate Input Resistance td(off) A Q 1 RGi tr E L c e b1 A1 b e1 Pin Pin Pin Pin 1 2 3 4 = = = = Gate Soure Drain Isolated 1.6 C/W RthJC Source-Drain Diode Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max. IS VGS = 0V 200 mA ISM Repetitive, Pulse Width Limited by TJM 800 mA VSD IF = IS, VGS = 0V, Note 1 trr IF = 200mA, -di/dt = 50A/μs, VR = 100V Notes: 1.5 1.6 V μs 1. Pulse test, t  300s, duty cycle, d  2%. 2. Part must be heatsunk for high-temp IDSS measurement. PRELIMANARY TECHNICAL INFORMATION The product presented herein is under development. The Technical Specifications offered are derived from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a "considered reflection" of the anticipated result. IXYS reserves the right to change limits, test conditions, and dimensions without notice. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or moreof the following U.S. patents: 4,860,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 IXTF02N450 Fig. 1. Output Characteristics @ TJ = 25ºC Fig. 2. Extended Output Characteristics @ TJ = 25ºC 200 400 VGS = 10V 180 8V VGS = 10V 350 160 300 8V 7V I D - MilliAmperes I D - MilliAmperes 140 120 100 80 60 6.5V 250 200 7V 150 100 40 6.5V 50 20 6V 6V 0 0 0 20 40 60 80 100 120 0 140 50 100 150 200 250 300 350 400 VDS - Volts VDS - Volts Fig. 4. RDS(on) Normalized to ID = 100mA Value vs. Junction Temperature Fig. 3. Output Characteristics @ TJ = 125ºC 200 3.0 180 VGS = 10V VGS = 10V 2.6 160 RDS(on) - Normalized I D - MilliAmperes 7V 140 120 100 80 6V 60 2.2 I D = 200mA 1.8 I D = 100mA 1.4 1.0 40 0.6 20 5V 0.2 0 0 50 100 150 200 -50 250 -25 0 25 Fig. 5. RDS(on) Normalized to ID = 100mA Value vs. Drain Current 2.6 75 100 125 150 Fig. 6. Maximum Drain Current vs. Case Temperature 220 200 VGS = 10V 2.4 50 TJ - Degrees Centigrade VDS - Volts 180 160 2.0 I D - MilliAmperes RDS(on) - Normalized 2.2 TJ = 125ºC 1.8 1.6 1.4 TJ = 25ºC 140 120 100 80 60 1.2 40 1.0 20 0.8 0 0 50 100 150 200 250 I D - MilliAmperes © 2013 IXYS CORPORATION, All Rights Reserved 300 350 -50 -25 0 25 50 75 TC - Degrees Centigrade 100 125 150 IXTF02N450 Fig. 8. Transconductance Fig. 7. Input Admittance 550 400 500 TJ = - 40ºC 350 450 400 g f s - MilliSiemens I D - MilliAmperes 300 250 200 TJ = 125ºC 25ºC 150 - 40ºC 350 25ºC 300 125ºC 250 200 150 100 100 50 50 0 0 4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5 0 8.0 50 100 150 VGS - Volts 200 250 300 350 400 I D - MilliAmperes Fig. 9. Forward Voltage Drop of Intrinsic Diode Fig. 10. Gate Charge 10 600 VDS = 1000V 9 500 I D = 100mA 8 400 VGS - Volts I S - MilliAmperes I G = 1mA 7 300 TJ = 125ºC 200 6 5 4 3 TJ = 25ºC 2 100 1 0 0 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 0 1 1 2 3 4 5 6 7 8 9 10 11 QG - NanoCoulombs VSD - Volts Fig. 12. Maximum Transient Thermal Impedance Fig. 11. Capacitance 1,000 10 1 Ciss 100 Z(th)JC - ºC / W Capacitance - PicoFarads f = 1 MHz Coss 10 0.1 0.01 Crss 1 0 5 10 15 20 25 30 35 40 VDS - Volts IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 0.001 0.0001 0.001 0.01 0.1 Pulse Width - Seconds 1 10 IXTF02N450 Fig. 13. Forward-Bias Safe Operating Area Fig. 14. Forward-Bias Safe Operating Area @ TC = 25ºC @ TC = 75ºC 1,000 1,000 RDS(on) Limit RDS(on) Limit 1ms I D - MilliAmperes I D - MilliAmperes 1ms 100 100 10ms TJ = 150ºC 10ms TJ = 150ºC TC = 25ºC Single Pulse DC 100ms TC = 75ºC Single Pulse 100ms DC 10 10 100 1,000 VDS - Volts © 2013 IXYS CORPORATION, All Rights Reserved 10,000 100 1,000 10,000 VDS - Volts IXYS REF: T_02N450(H5-P640)10-15-13 Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics.