IXTF1N450

IXTF1N450 High Voltage Power MOSFET VDSS ID25 RDS(on) = 4500V = 0.9A   80 (Electrically Isolated Tab) ISOPLUS i4-PakTM N-Channel Enhancement Mode Symbol Test Conditions VDSS TJ = 25C to 150C Maximum Ratings 4500 V VDGR TJ = 25C to 150C, RGS = 1M 4500 V VGSS Continuous 20 V VGSM Transient 30 V ID25 TC = 25C 0.9 A IDM TC = 25C, Pulse Width Limited by TJM 3.0 A PD TC = 25C 160 W - 55 ... +150 150 - 55 ... +150 C C C 300 260 °C °C 20..120 / 4.5..27 N/lb. 4500 V~ 6 g TJ TJM Tstg TL TSOLD Maximum Lead Temperature for Soldering Plastic Body for 10s FC Mounting Force VISOL 50/60Hz, 1 Minute Weight 1 5 1 = Gate 2 = Source       VGS(th) VDS = VGS, ID = 250A IGSS VGS = 20V, VDS = 0V 100 nA IDSS VDS = 3.6kV, VGS = 0V VDS = 4.5kV VDS = 3.6kV 5 A 25 μA μA RDS(on) 3.5 Note 2, TJ = 100C VGS = 10V, ID = 50mA, Note 1 © 2013 IXYS CORPORATION, All Rights Reserved 6.0 15 80 V 5 = Drain Silicon Chip on Direct-Copper Bond (DCB) Substrate Isolated Mounting Surface 4500V~ Electrical Isolation Molding Epoxies meet UL 94 V-0 Flammability Classification Advantages  Characteristic Values Min. Typ. Max. Isolated Tab Features  Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) 2 High Voltage Package Easy to Mount Space Savings High Power Density Applications     High Voltage Power Supplies Capacitor Discharge Applications Pulse Circuits Laser and X-Ray Generation Systems  DS100501D(10/13) IXTF1N450 Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) gfs Characteristic Values Min. Typ. Max. VDS = 50V, ID = 200mA, Note 1 0.40 Ciss Coss ISOPLUS i4-PakTM (HV) Outline 0.70 S 1700 pF VGS = 0V, VDS = 25V, f = 1MHz Crss 80 pF 29 pF   RGi Gate Input Resistance 12 td(on) Resistive Switching Times 30 ns 43 ns 73 ns 120 ns 46 nC 8 nC 23 nC 0.15 0.77 C/W C/W tr td(off) tf VGS = 10V, VDS = 500V, ID = 0.5A RG = 10 (External) Qg(on) Qgs VGS = 10V, VDS = 1kV, ID = 0.5A Qgd RthJC RthCS Pin Pin Pin Pin 1 2 3 4 = = = = Gate Soure Drain Isolated Source-Drain Diode Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max. IS VGS = 0V 1 A ISM Repetitive, Pulse Width Limited by TJM 5 A VSD IF = 1A, VGS = 0V, Note 1 2.0 V trr IF = 1A, -di/dt = 50A/μs, VR = 100V Notes: 1.75 μs 1. Pulse test, t  300s, duty cycle, d  2%. 2. Part must be heatsunk for high-temp IDSS measurement. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or moreof the following U.S. patents: 4,860,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 IXTF1N450 Fig. 1. Output Characteristics @ TJ = 25ºC Fig. 2. Output Characteristics @ TJ = 125ºC 1.0 VGS = 10V 1.2 0.9 VGS = 10V 7V 0.8 1.0 0.7 I D - Amperes I D - Amperes 7V 0.8 0.6 6.5V 0.4 0.6 6V 0.5 0.4 0.3 0.2 0.2 0.1 6V 0.0 5V 0.0 0 20 40 60 80 100 120 140 0 20 40 60 VDS - Volts 80 100 120 140 160 VDS - Volts Fig. 4. RDS(on) Normalized to ID = 0.5A Value vs. Drain Current Fig. 3. RDS(on) Normalized to ID = 0.5A Value vs. Junction Temperature 2.4 2.6 VGS = 10V VGS = 10V 2.2 2.2 RDS(on) - Normalized RDS(on) - Normalized I D = 1A 1.8 I D = 0.5A 1.4 1.0 TJ = 125ºC 2.0 1.8 1.6 1.4 TJ = 25ºC 1.2 0.6 1.0 0.8 0.2 -50 -25 1.0 0 25 50 75 100 125 0 150 0.2 0.4 0.6 0.8 1 TJ - Degrees Centigrade I D - Amperes Fig. 5. Maximum Drain Current vs. Case Temperature Fig. 6. Input Admittance 1.2 1.2 1.0 I D - Amperes I D - Amperes 0.8 0.6 0.4 0.8 TJ = 125ºC 0.6 25ºC - 40ºC 0.4 0.2 0.2 0.0 0.0 -50 -25 0 25 50 75 TC - Degrees Centigrade © 2013 IXYS CORPORATION, All Rights Reserved 100 125 150 4.0 4.5 5.0 5.5 6.0 VGS - Volts 6.5 7.0 7.5 IXTF1N450 Fig. 7. Transconductance Fig. 8. Forward Voltage Drop of Intrinsic Diode 3.0 3.0 TJ = - 40ºC 2.0 2.5 2.0 25ºC I S - Amperes g f s - Siemens 2.5 125ºC 1.5 1.5 TJ = 125ºC 1.0 1.0 0.5 0.5 TJ = 25ºC 0.0 0.0 0.0 0.2 0.4 0.6 0.8 1.0 1.2 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 30 35 40 VSD - Volts I D - Amperes Fig. 9. Gate Charge Fig. 10. Capacitance 10 10,000 f = 1 MHz VDS = 1000V 9 8 Capacitance - PicoFarads I D = 0.5A I G = 10mA VGS - Volts 7 6 5 4 3 C iss 1,000 C oss 100 2 1 C rss 0 10 0 5 10 15 20 25 30 35 40 45 50 0 5 10 15 20 25 VDS - Volts QG - NanoCoulombs Fig. 11. Maximum Transient Thermal Impedance Z(th)JC - ºC / W 1 0.1 0.01 0.0001 0.001 0.01 0.1 Pulse Width - Seconds IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 1 10 100 IXTF1N450 Fig. 13. Forward-Bias Safe Operating Area Fig. 12. Forward-Bias Safe Operating Area @ TC = 75ºC @ TC = 25ºC 10 10 RDS(on) Limit RDS(on) Limit 25µs 25µs 100µs 1 1 I D - Amperes I D - Amperes 100µs 1ms 1ms 0.1 0.1 10ms 10ms TJ = 150ºC TJ = 150ºC DC TC = 25ºC Single Pulse 100ms 100ms TC = 75ºC Single Pulse 0.01 DC 0.01 100 1,000 VDS - Volts © 2013 IXYS CORPORATION, All Rights Reserved 10,000 100 1,000 10,000 VDS - Volts IXYS REF: T_1N450(H7-P640) 10-11-13 Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics.