IXTF1R4N450

Advance Technical Information IXTF1R4N450 High Voltage Power MOSFET VDSS ID25 RDS(on) = 4500V = 1.4A   40 (Electrically Isolated Tab) ISOPLUS i4-PakTM N-Channel Enhancement Mode Symbol Test Conditions VDSS TJ = 25C to 150C Maximum Ratings 4500 V VDGR TJ = 25C to 150C, RGS = 1M 4500 V VGSS Continuous 20 V VGSM Transient 30 V ID25 TC = 25C 1.4 A IDM TC = 25C, Pulse Width Limited by TJM 4.2 A PD TC = 25C 190 W - 55 ... +150 150 - 55 ... +150 C C C 300 260 C C 20..120 / 4.5..27 N/lb 4500 V~ 6 g TJ TJM Tstg TL TSOLD Maximum Lead Temperature for Soldering 1.6 mm (0.062in.) from Case for 10s FC Mounting Force VISOL 50/60Hz, 1 Minute Weight 1 5 1 = Gate 2 = Source       VGS(th) VDS = VGS, ID = 250A IGSS VGS = 20V, VDS = 0V 100 nA IDSS VDS = 3.6kV, VGS = 0V VDS = 4.5kV VDS = 3.6kV 5 A 25 μA μA RDS(on) 4.0 Note 2, TJ = 100C VGS = 10V, ID = 50mA, Note 1 © 2016 IXYS CORPORATION, All Rights Reserved 6.0 25 40 V 5 = Drain Silicon Chip on Direct-Copper Bond (DCB) Substrate Isolated Mounting Surface 4500V~ Electrical Isolation Molding Epoxies meet UL 94 V-0 Flammability Classification Advantages  Characteristic Values Min. Typ. Max. Isolated Tab Features  Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) 2 High Voltage Package Easy to Mount Space Savings High Power Density Applications     High Voltage Power Supplies Capacitor Discharge Applications Pulse Circuits Laser and X-Ray Generation Systems  DS100710(02/16) IXTF1R4N450 Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) gfs Characteristic Values Min. Typ. Max. VDS = 50V, ID = 700mA, Note 1 1.2 Ciss Coss 2.0 S 3300 pF 134 pF 52 pF VGS = 0V, VDS = 25V, f = 1MHz Crss RGi Gate Input Resistance 7.8 td(on) Resistive Switching Times 44 tr td(off) tf VGS = 10V, VDS = 500V, ID = 0.5 • ID25 RG = 10 (External) Qg(on) Qgs VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 Qgd RthJC RthCS   ns 60 ns 126 ns 170 ns 88 nC 16 nC 42 nC 0.15 0.65 C/W C/W Source-Drain Diode Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max IS VGS = 0V, Note1 1.4 A ISM Repetitive, pulse Width Limited by TJM 5.6 A VSD IF = IS, VGS = 0V, Note 1 1.5 V trr QRM IRM IF = 1A, -di/dt = 100A/μs Notes: 660 4.6 14.0 VR = 100V ns μC A 1. Pulse test, t  300s, duty cycle, d  2%. 2. Part must be heatsunk for high-temp IDSS measurement. ADVANCE TECHNICAL INFORMATION The product presented herein is under development. The Technical Specifications offered are derived from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a "considered reflection" of the anticipated result. IXYS reserves the right to change limits, test conditions, and dimensions without notice. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or moreof the following U.S. patents: 4,860,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 IXTF1R4N450 Fig. 2. Output Characteristics @ TJ = 125ºC Fig. 1. Output Characteristics @ TJ = 25ºC 1.0 1.8 VGS = 10V 1.6 VGS = 10V 0.8 7V 1.4 I D - Amperes I D - Amperes 6V 1.2 1.0 0.8 6.5V 0.6 0.4 5.5V 0.6 0.4 0.2 6V 0.2 5V 0.0 0.0 0 10 20 30 40 50 60 70 0 80 20 30 40 50 60 VDS - Volts Fig. 3. RDS(on) Normalized to ID = 0.7A Value vs. Junction Temperature Fig. 4. RDS(on) Normalized to ID = 0.7A Value vs. Drain Current 70 80 1.6 1.8 2.4 2.6 2.4 10 VDS - Volts VGS = 10V VGS = 10V 2.2 2.0 R DS(on) - Normalized R DS(on) - Normalized 2.2 1.8 1.6 I D = 1.4A 1.4 I D = 0.7A 1.2 1.0 TJ = 125ºC 2.0 1.8 1.6 1.4 1.2 TJ = 25ºC 0.8 1.0 0.6 0.8 0.4 -50 -25 0 25 50 75 100 125 0 150 0.2 0.4 0.6 0.8 1 1.2 1.4 I D - Amperes TJ - Degrees Centigrade Fig. 5. Maximum Drain Current vs. Case Temperature Fig. 6. Input Admittance 1.6 2.0 1.8 1.4 1.6 1.2 ID - Amperes ID - Amperes 1.4 1 0.8 0.6 1.2 TJ = 125ºC 25ºC - 40ºC 1.0 0.8 0.6 0.4 0.4 0.2 0.2 0 0.0 -50 -25 0 25 50 75 TC - Degrees Centigrade © 2016 IXYS CORPORATION, All Rights Reserved 100 125 150 4.0 4.5 5.0 5.5 6.0 VGS - Volts 6.5 7.0 7.5 IXTF1R4N450 Fig. 7. Transconductance Fig. 8. Forward Voltage Drop of Intrinsic Diode 4.5 4.5 TJ = - 40ºC 4.0 4.0 3.5 3.5 3.0 25ºC I S - Amperes g f s - Siemens 3.0 2.5 125ºC 2.0 2.5 2.0 TJ = 125ºC 1.5 1.5 1.0 1.0 0.5 0.5 TJ = 25ºC 0.0 0.0 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2 0.2 0.3 0.4 0.5 I D - Amperes 0.6 0.7 0.8 0.9 1 30 35 40 VSD - Volts Fig. 9. Gate Charge Fig. 10. Capacitance 10 10,000 f = 1 MHz VDS = 1000V 9 I D = 0 .7A 8 Capacitance - PicoFarads I G = 10mA VGS - Volts 7 6 5 4 3 Ciss 1,000 Coss 100 2 Crss 1 10 0 0 10 20 30 40 50 60 70 80 0 90 5 10 15 20 25 VDS - Volts QG - NanoCoulombs Fig. 12. Maximum Transient Thermal Impedance Fig. 11. Forward-Bias Safe Operating Area 1 10 RDS(on) Limit 25µs 100µs Z(th)JC - ºC / W I D - Amperes 1 1ms 0.1 0.1 TJ = 150ºC 10ms TC = 25ºC Single Pulse DC 100ms 0.01 100 1,000 10,000 VDS - Volts IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 0.01 0.0001 0.001 0.01 0.1 1 Pulse Width - Seconds 10 100 IXTF1R4N450 ISOPLUS i4-Pak Outline 1 = Gate 2 = Source 3,4 = Drain © 2016 IXYS CORPORATION, All Rights Reserved IXYS REF: T_1R4N450(H8-P640) 2-25-16 Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics.