IXTH02N450HV

IXTT02N450HV IXTH02N450HV High Voltage Power MOSFET VDSS ID25 RDS(on) = 4500V = 200mA   625 TO-268HV (IXTT) N-Channel Enhancement Mode G S D (Tab) TO-247HV (IXTH) Symbol Test Conditions Maximum Ratings VDSS TJ = 25C to 150C 4500 V VDGR TJ = 25C to 150C, RGS = 1M 4500 V VGSS Continuous 20 V VGSM Transient 30 V ID25 TC = 25C 200 mA IDM TC = 25C, Pulse Width Limited by TJM 600 mA PD TC = 25C 113 W - 55 ... +150 150 - 55 ... +150 C C C 300 260 °C °C 1.13/10 Nm/lb.in 4 6 g g TJ TJM Tstg TL TSOLD Maximum Lead Temperature for Soldering Plastic Body for 10s Md Mounting Torque Weight TO-268HV TO-247HV G S D G = Gate S = Source D (Tab) D = Drain Tab = Drain Features   High Blocking Voltage High Voltage Packages Advantages   Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified)  Characteristic Values Min. Typ. Max. VGS(th) VDS = VGS, ID = 250A IGSS VGS = 20V, VDS = 0V 100 nA IDSS VDS = 3.6kV, VGS = 0V VDS = 4.5kV VDS = 3.6kV 5 A 10 μA μA RDS(on) 4.0 TJ = 125C VGS = 10V, ID = 10mA, Note 1 © 2014 IXYS CORPORATION, All Rights Reserved 6.5 15 625 V Easy to Mount Space Savings High Power Density Applications     High Voltage Power Supplies Capacitor Discharge Applications Pulse Circuits Laser and X-Ray Generation Systems  DS100498C(10/14) IXTT02N450HV IXTH02N450HV Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) gfs Characteristic Values Min. Typ. Max. VDS = 50V, ID = 50mA, Note 1 90 Ciss Coss VGS = 0V, VDS = 25V, f = 1MHz Crss TO-268HV Outline E 150 mS 246 pF 19 pF 5.8 3 e Gate Input Resistance 76 td(on) Resistive Switching Times 17 ns PINS: 1 - Gate 2 - Source 3 - Drain 48 ns L3 28 ns 143 ns 10.6 nC 3.3 nC 5.5 nC td(off) tf VGS = 10V, VDS = 500V, ID = 0.5 • ID25 RG = 10 (External) Qg(on) Qgs VGS = 10V, VDS = 1kV, ID = 0.5 • ID25 Qgd D3 1 b A2 L 1.1 °C/W RthJC RthCS D1 2 C RGi tr 3 D2 A1 L4  E1 H 2 e A C2 D 1 pF  L2 TO-247HV 0.21 °C/W Source-Drain Diode Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max. IS VGS = 0V 200 mA ISM Repetitive, Pulse Width Limited by TJM 800 mA VSD IF = IS, VGS = 0V, Note 1 1.5 trr IF = 200mA, -di/dt = 50A/μs, VR = 100V TO-247HV Outline E R 0P V E1 0P1 D1 D 1.6 4 μs D2 1 2 3 L1 D3 L Note: A A2 Q S e 1. Pulse test, t  300s, duty cycle, d  2%. e1 A3 2X A1 E2 E3 4X b c 3X PINS: 1 - Gate 2 - Source 3, 4 - Drain 3X IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or moreof the following U.S. patents: 4,860,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 b1 IXTT02N450HV IXTH02N450HV Fig. 1. Output Characteristics @ TJ = 25ºC Fig. 2. Extended Output Characteristics @ TJ = 25ºC 200 400 VGS = 10V 180 8V VGS = 10V 350 160 300 8V 7V I D - MilliAmperes I D - MilliAmperes 140 120 100 80 60 6.5V 250 200 7V 150 100 40 6.5V 50 20 6V 6V 0 0 0 20 40 60 80 100 120 0 140 50 100 150 200 250 300 350 400 VDS - Volts VDS - Volts Fig. 4. RDS(on) Normalized to ID = 100mA Value vs. Junction Temperature Fig. 3. Output Characteristics @ TJ = 125ºC 200 3.0 180 VGS = 10V VGS = 10V 2.6 160 RDS(on) - Normalized I D - MilliAmperes 7V 140 120 100 80 6V 60 2.2 I D = 200mA 1.8 I D = 100mA 1.4 1.0 40 0.6 20 5V 0.2 0 0 2.6 50 100 150 200 -50 250 0 25 50 75 100 TJ - Degrees Centigrade Fig. 5. RDS(on) Normalized to ID = 100mA Value vs. Drain Current Fig. 6. Maximum Drain Current vs. Case Temperature 220 125 150 200 VGS = 10V 2.4 -25 VDS - Volts 180 160 2.0 I D - MilliAmperes RDS(on) - Normalized 2.2 TJ = 125ºC 1.8 1.6 1.4 TJ = 25ºC 140 120 100 80 60 1.2 40 1.0 20 0.8 0 0 50 100 150 200 250 I D - MilliAmperes © 2014 IXYS CORPORATION, All Rights Reserved 300 350 -50 -25 0 25 50 75 TC - Degrees Centigrade 100 125 150 IXTT02N450HV IXTH02N450HV Fig. 8. Transconductance Fig. 7. Input Admittance 550 400 500 TJ = - 40ºC 350 450 400 g f s - MilliSiemens I D - MilliAmperes 300 250 200 TJ = 125ºC 25ºC 150 - 40ºC 350 25ºC 300 125ºC 250 200 150 100 100 50 50 0 0 4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5 0 8.0 50 100 150 VGS - Volts 200 250 300 350 400 I D - MilliAmperes Fig. 9. Forward Voltage Drop of Intrinsic Diode Fig. 10. Gate Charge 10 600 VDS = 1000V 9 500 I D = 100mA 8 400 VGS - Volts I S - MilliAmperes I G = 1mA 7 300 TJ = 125ºC 200 6 5 4 3 TJ = 25ºC 2 100 1 0 0 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 0 1 1 2 3 4 5 6 7 8 9 10 11 QG - NanoCoulombs VSD - Volts Fig. 12. Maximum Transient Thermal Impedance Fig. 11. Capacitance 1,000 10 1 Ciss 100 Z(th)JC - ºC / W Capacitance - PicoFarads f = 1 MHz Coss 10 0.1 0.01 Crss 1 0 5 10 15 20 25 30 35 40 VDS - Volts IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 0.001 0.0001 0.001 0.01 0.1 Pulse Width - Seconds 1 10 IXTT02N450HV IXTH02N450HV Fig. 13. Forward-Bias Safe Operating Area Fig. 14. Forward-Bias Safe Operating Area @ TC = 25ºC @ TC = 75ºC 1,000 1,000 RDS(on) Limit RDS(on) Limit 1ms I D - MilliAmperes I D - MilliAmperes 1ms 100 100 10ms TJ = 150ºC 10ms TJ = 150ºC TC = 25ºC Single Pulse DC 100ms TC = 75ºC Single Pulse DC 100ms 10 10 100 1,000 VDS - Volts © 2014 IXYS CORPORATION, All Rights Reserved 10,000 100 1,000 10,000 VDS - Volts IXYS REF: T_02N450(H5-P640)10-15-13 Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics.