IXTH04N300P3HV

Advance Technical Information IXTH04N300P3HV High Voltage Power MOSFET VDSS ID25 RDS(on) = 3000V = 0.40A   190 N-Channel Enhancement Mode TO-247HV Symbol Test Conditions VDSS TJ = 25C to 150C Maximum Ratings 3000 V VDGR TJ = 25C to 150C, RGS = 1M 3000 V VGSS Continuous 20 V VGSM Transient 30 V ID25 TC = 25C 0.40 A ID110 TC = 110C 0.24 A IDM TC = 25C, Pulse Width Limited by TJM 0.80 A PD TC = 25C 104 W - 55 ... +150 150 - 55 ... +150 C C C 300 260 °C °C 1.13/10 Nm/lb.in 6 g TJ TJM Tstg TL TSOLD Maximum Lead Temperature for Soldering 1.6 mm (0.062in.) from Case for 10s Md Mounting Torque Weight G S D G = Gate S = Source D (Tab) D = Drain Tab = Drain Features   High Blocking Voltage High Voltage Package Advantages    Easy to Mount Space Savings High Power Density Applications  Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max. BVDSS VGS = 0V, ID = 250A 3000 VGS(th) VDS = VGS, ID = 250A 2.0 IGSS VGS = 20V, VDS = 0V IDSS VDS = 0.8 • VDSS, VGS = 0V RDS(on) VGS = 10V, ID = 0.20A, Note 1    High Voltage Power Supplies Capacitor Discharge Applications Pulse Circuits Laser and X-Ray Generation Systems V 4.0 V 100 nA TJ = 125C © 2014 IXYS CORPORATION, All Rights Reserved 10 A 250  A 190  DS100638(12/14) IXTH04N300P3HV Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) gfs Characteristic Values Min. Typ. Max. VDS = 60V, ID = 0.20A, Note 1 0.17 S 283 pF 18 pF 5 pF VGS = 0V, VDS = 25V, f = 1MHz Crss td(on) tr td(off) tf ns 20 ns 35 ns 26 ns 13.0 nC 1.0 nC 8.7 nC 0.21 1.2 C/W C/W VGS = 10V, VDS = 50V, ID = 0.40A RG = 10 (External) Qg(on) Qgs 12 Resistive Switching Times VGS = 10V, VDS = 1.5kV, ID = 0.5 • ID25 Qgd RthJC RthCS E R 0.28 Ciss Coss TO-247HV (IXTH) Outline 0P A2 A E1 0P1 Q S D1 D 4 D2 1 2 3 L1 D3 L e e1 A3 2X E2 E3 4X A1 b c 3X PINS: 1 - Gate 2 - Source 3, 4 - Drain 3X Source-Drain Diode Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max IS VGS = 0V, Note1 0.4 A ISM Repetitive, pulse Width Limited by TJM 1.6 A VSD IF = IS, VGS = 0V, Note 1 1.5 V trr QRM IRM IF = 0.4A, -di/dt = 100A/μs Note: 1.1 6.2 11.2 VR = 100V μs C A 1. Pulse test, t  300s, duty cycle, d  2%. ADVANCE TECHNICAL INFORMATION The product presented herein is under development. The Technical Specifications offered are derived from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a "considered reflection" of the anticipated result. IXYS reserves the right to change limits, test conditions, and dimensions without notice. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or moreof the following U.S. patents: 4,860,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 b1 IXTH04N300P3HV Fig. 1. Output Characteristics @ TJ = 25ºC Fig. 2. Output Characteristics @ TJ = 125ºC 0.6 0.8 VGS = 10V 7V VGS = 10V 0.7 0.5 7V 0.6 I D - Amperes I D - Amperes 0.4 0.5 0.4 6V 0.3 6V 0.3 0.2 5V 0.2 0.1 0.1 5V 0.0 4V 0 3.0 50 100 4V 0.0 150 200 0 250 40 80 120 160 200 240 280 VDS - Volts VDS - Volts Fig. 3. RDS(on) Normalized to ID = 0.2A Value vs. Junction Temperature Fig. 4. RDS(on) Normalized to ID = 0.2A Value vs. Drain Current 320 3.4 VGS = 10V VGS = 10V 3.0 I D = 0.4A RDS(on) - Normalized RDS(on) - Normalized 2.6 2.2 1.8 I D = 0.2A 1.4 1.0 2.6 TJ = 125ºC 2.2 1.8 1.4 TJ = 25ºC 1.0 0.6 0.6 0.2 -50 -25 0 25 50 75 100 125 0 150 0.1 0.2 0.3 TJ - Degrees Centigrade 0.4 0.5 0.6 0.7 0.8 I D - Amperes Fig. 5. Maximum Drain Current vs. Case Temperature Fig. 6. Input Admittance 0.8 0.5 0.7 0.4 I D - Amperes I D - Amperes 0.6 0.3 0.2 TJ = 125ºC 25ºC - 40ºC 0.5 0.4 0.3 0.2 0.1 0.1 0 0.0 -50 -25 0 25 50 75 TC - Degrees Centigrade © 2014 IXYS CORPORATION, All Rights Reserved 100 125 150 2.5 3.0 3.5 4.0 4.5 5.0 VGS - Volts 5.5 6.0 6.5 7.0 7.5 IXTH04N300P3HV Fig. 8. Forward Voltage Drop of Intrinsic Diode Fig. 7. Transconductance 1.2 0.7 TJ = - 40ºC 0.6 1.0 0.5 0.4 0.8 I S - Amperes g f s - Siemens 25ºC 125ºC 0.3 0.6 0.4 TJ = 125ºC 0.2 TJ = 25ºC 0.2 0.1 0.0 0.0 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.3 0.8 0.4 0.5 0.6 Fig. 9. Gate Charge 0.8 0.9 Fig. 10. Capacitance 1,000 10 f = 1 MHz VDS = 1500V 9 Capacitance - PicoFarads I D = 0.2A 8 I G = 1mA 7 VGS - Volts 0.7 VSD - Volts I D - Amperes 6 5 4 3 Ciss 100 Coss 10 2 Crss 1 0 1 0 10 2 4 6 8 QG - NanoCoulombs 10 0 12 5 10 Fig. 11. Maximum Transient Thermal Impedance 15 20 25 30 35 40 VDS - Volts Fig. 11. Maximum Transient Thermal Impedance aaaa 3 Z (th)JC - ºC / W 1 0.1 0.01 0.00001 0.0001 0.001 0.01 Pulse Width - Second IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 0.1 1 IXTH04N300P3HV Fig. 12. Forward-Bias Safe Operating Area Fig. 13. Forward-Bias Safe Operating Area @ TC = 25ºC @ TC = 75ºC 1 1 RDS(on) Limit RDS(on) Limit 25µs I D - Amperes I D - Amperes 100µs 1ms 0.1 100µs 0.1 1ms 10ms DC 100ms TJ = 150ºC TJ = 150ºC TC = 25ºC Single Pulse TC = 75ºC Single Pulse 0.01 10ms DC 100ms 0.01 100 1,000 VDS - Volts © 2014 IXYS CORPORATION, All Rights Reserved 10,000 100 1,000 10,000 VDS - Volts IXYS REF: T_04N300P3HV(M3) 11-25-14 Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. 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