IXTH06N220P3HV

Advance Technical Information IXTH06N220P3HV High Voltage Power MOSFET VDSS ID25 RDS(on) = 2200V = 0.60A   80 N-Channel Enhancement Mode TO-247HV Symbol Test Conditions VDSS TJ = 25C to 150C Maximum Ratings 2200 V VDGR TJ = 25C to 150C, RGS = 1M 2200 V VGSS Continuous 20 V VGSM Transient 30 V ID25 TC = 25C 0.60 A ID110 TC = 110C 0.38 A IDM TC = 25C, Pulse Width Limited by TJM 1.20 A PD TC = 25C 104 W - 55 ... +150 150 - 55 ... +150 C C C 300 260 °C °C 1.13/10 Nm/lb.in 6 g TJ TJM Tstg TL TSOLD Maximum Lead Temperature for Soldering 1.6 mm (0.062in.) from Case for 10s Md Mounting Torque Weight G S D G = Gate S = Source D (Tab) D = Drain Tab = Drain Features   High Blocking Voltage High Voltage Package Advantages    Easy to Mount Space Savings High Power Density Applications  Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max. BVDSS VGS = 0V, ID = 250A 2200 VGS(th) VDS = VGS, ID = 250A 2.0 IGSS VGS = 20V, VDS = 0V IDSS VDS = 0.8 • VDSS, VGS = 0V RDS(on) VGS = 10V, ID = 0.30A, Note 1    High Voltage Power Supplies Capacitor Discharge Applications Pulse Circuits Laser and X-Ray Generation Systems V 4.0 V 100 nA TJ = 125C © 2014 IXYS CORPORATION, All Rights Reserved 10 A 200  A 80  DS100640(12/14) IXTH06N220P3HV Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) gfs Characteristic Values Min. Typ. Max. VDS = 60V, ID = 0.30A, Note 1 0.24 Ciss Coss VGS = 0V, VDS = 25V, f = 1MHz Crss td(on) tr td(off) tf Qgs S 290 pF 25 pF 7 pF ns ns 19 ns 19 ns 10.4 nC 1.3 nC 7.2 nC 0.21 1.2 C/W C/W RG = 10 (External) VGS = 10V, VDS = 1.1kV, ID = 0.5 • ID25 Qgd RthJC RthCS 0.40 7 VGS = 10V, VDS = 50V, ID = 0.60A E R 18 Resistive Switching Times Qg(on) TO-247HV (IXTH) Outline 0P A A2 E1 0P1 Q S D1 D 4 D2 1 2 3 L1 D3 L e e1 A3 2X A1 E2 E3 4X b c 3X PINS: 1 - Gate 2 - Source 3, 4 - Drain 3X Source-Drain Diode Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max IS VGS = 0V, Note1 0.6 A ISM Repetitive, pulse Width Limited by TJM 1.2 A VSD IF = IS, VGS = 0V, Note 1 1.5 V trr QRM IRM IF = 0.6A, -di/dt = 100A/μs Note: 1.1 6.4 11.6 VR = 100V μs C A 1. Pulse test, t  300s, duty cycle, d  2%. ADVANCE TECHNICAL INFORMATION The product presented herein is under development. The Technical Specifications offered are derived from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a "considered reflection" of the anticipated result. IXYS reserves the right to change limits, test conditions, and dimensions without notice. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or moreof the following U.S. patents: 4,860,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 b1 IXTH06N220P3HV Fig. 2. Output Characteristics @ TJ = 125ºC Fig. 1. Output Characteristics @ TJ = 25ºC 0.8 1.2 VGS = 10V VGS = 10V 8V 0.7 7V 1.0 0.6 I D - Amperes I D - Amperes 7V 0.8 0.6 6V 0.4 6V 0.5 0.4 0.3 5V 0.2 0.2 0.1 5V 4V 4V 0.0 0 20 40 60 80 0.0 100 120 140 160 180 0 20 40 60 80 VDS - Volts Fig. 3. RDS(on) Normalized to ID = 0.3A Value vs. Junction Temperature 3.0 120 140 160 180 Fig. 4. RDS(on) Normalized to ID = 0.3A Value vs. Drain Current 3.4 VGS = 10V VGS = 10V 2.6 3.0 2.2 RDS(on) - Normalized RDS(on) - Normalized 100 VDS - Volts I D = 0.6A 1.8 I D = 0.3A 1.4 1.0 2.6 TJ = 125ºC 2.2 1.8 1.4 TJ = 25ºC 1.0 0.6 0.6 0.2 -50 -25 0 25 50 75 100 125 0 150 0.2 0.4 TJ - Degrees Centigrade 0.6 0.8 1 1.2 I D - Amperes Fig. 5. Maximum Drain Current vs. Case Temperature Fig. 6. Input Admittance 0.7 1.0 0.9 0.6 0.8 0.7 I D - Amperes I D - Amperes 0.5 0.4 0.3 TJ = 125ºC 25ºC - 40ºC 0.6 0.5 0.4 0.3 0.2 0.2 0.1 0.1 0.0 0.0 -50 -25 0 25 50 75 TC - Degrees Centigrade © 2014 IXYS CORPORATION, All Rights Reserved 100 125 150 2.5 3.0 3.5 4.0 4.5 5.0 VGS - Volts 5.5 6.0 6.5 7.0 7.5 IXTH06N220P3HV Fig. 7. Transconductance Fig. 8. Forward Voltage Drop of Intrinsic Diode 1.8 1.0 1.6 TJ = - 40ºC 1.4 0.8 1.2 0.6 I S - Amperes g f s - Siemens 25ºC 125ºC 0.4 1.0 0.8 TJ = 125ºC 0.6 TJ = 25ºC 0.4 0.2 0.2 0.0 0.0 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 0.3 0.4 0.5 0.6 0.8 0.9 1.0 Fig. 10. Capacitance Fig. 9. Gate Charge 10 1,000 f = 1 MHz VDS = 1100V 9 Capacitance - PicoFarads I D = 0.3A 8 I G = 10mA 7 VGS - Volts 0.7 VSD - Volts I D - Amperes 6 5 4 3 Ciss 100 Coss 10 Crss 2 1 0 1 0 10 1 2 3 4 5 6 7 0 5 10 Fig. 11. Maximum Transient Thermal Impedance 8 9 10 11 15 20 25 30 35 40 VDS - Volts QG - NanoCoulombs Fig. 11. Maximum Transient Thermal Impedance aaaa 3 Z (th)JC - ºC / W 1 0.1 0.01 0.00001 0.0001 0.001 0.01 Pulse Width - Second IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 0.1 1 Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics. Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications.Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics.