IXTH102N15T

Trench Gate Power MOSFETs N-Channel Enhancement Mode Avalanche Rated TO-247 (IXTH) TO-263 (IXTA) G S (TAB) G D VDSS ID25 IXTA102N15T IXTH102N15T IXTP102N15T IXTQ102N15T TO-3P (IXTQ) TO-220 (IXTP) (TAB) S RDS(on) G = 150V = 102A Ω ≤ 18mΩ G (TAB) D S Symbol Test Conditions VDSS VDGR TJ = 25°C to 175°C TJ = 25°C to 175°C RGS = 1MΩ 150 150 V V VGSS VGSM Continuous Transient ± 20 ± 30 V V ID25 ILRMS IDM TC = 25°C Lead Current Limit, RMS TC = 25°C, Pulse Width Limited by TJM 102 75 300 A A A IA EAS TC = 25°C TC = 25°C 51 750 A mJ dV/dt IS ≤ IDM, VDD ≤ VDSS , TJ ≤ 175°C 10 V/ns PD TC = 25°C 455 W -55 ... +175 175 -55 ... +175 °C °C °C 300 260 °C °C 1.13 / 10 Nmlb.in. z 10..65/2.2..14.6 N/lb. z 2.5 3.0 5.5 6.0 g g g g D (TAB) S Maximum Ratings TJ TJM Tstg TL TSOLD 1.6mm (0.062 in.) from Case for 10s Plastic Body for 10 seconds Md Mounting Torque (TO-220, TO-3P, TO-247) FC Mounting Force (TO-263) Weight TO-263 TO-220 TO-3P TO-247 Symbol Test Conditions (TJ = 25°C Unless Otherwise Specified) Characteristic Values Min. Typ. Max. BVDSS VGS = 0V, ID = 250μA 150 VGS(th) VDS = VGS, ID = 1mA 2.5 IGSS VGS = ± 20V, VDS = 0V IDSS VDS = VDSS, VGS= 0V RDS(on) VGS = 10V, ID = 0.5 • ID25, Note 1 G = Gate S = Source D = Drain TAB = Drain Features z z International Standard Packages Avalanche Rated Advantages z z z Easy to Mount Space Savings High Power Density Applications z z z z z DC-DC Converters Battery Chargers Switched-Mode and Resonant-Mode Power Supplies DC Choppers AC Motor Drives Uninterruptible Power Supplies High Speed Power Switching Applications V 5.0 V ± 200 nA TJ = 150°C © 2009 IXYS CORPORATION, All Rights Reserved 5 μA 250 μA 18 mΩ DS99661C(04/09) IXTA102N15T IXTH102N15T IXTP102N15T IXTQ102N15T Symbol Test Conditions (TJ = 25°C Unless Otherwise Specified) Characteristic Values Min. Typ. Max. gfs 50 VDS= 10V, ID = 0.5 • ID25, Note 1 Ciss Coss VGS = 0V, VDS = 25V, f = 1MHz Crss td(on) tr td(off) tf Resistive Switching Times VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 RG = 3.3Ω (External) Qg(on) Qgs VGS= 10V, VDS = 0.5 • VDSS , ID = 25A Qgd 80 S 5220 pF 685 pF 95 pF 20 ns 14 ns 25 ns 22 ns 87 nC 23 nC 31 nC 0.33 °C/W RthJC RthCH (TO-220) 0.50 °C/W (TO-3P & TO-247) 0.25 °C/W Source-Drain Diode Symbol Test Conditions (TJ = 25°C Unless Otherwise Specified) Characteristic Values Min. Typ. Max. IS VGS = 0V 102 A ISM Repetitive, Pulse Width Limited by TJM 400 A VSD IF = 100A, VGS = 0V, Note 1 1.3 V trr IRM QRM IF = 51A, -di/dt = 100A/μs 97 8.4 409 VR = 75V, VGS = 0V ns A nC Note 1: Pulse test, t ≤ 300μs; duty cycle, d ≤ 2%. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or moreof the following U.S. patents: 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 IXTA102N15T IXTH102N15T IXTP102N15T IXTQ102N15T TO-263 (IXTA) Outline TO-247 (IXTH) Outline ∅P 1 2 3 e Terminals: 1 - Gate 3 - Source Dim. Millimeter Min. Max. A 4.7 5.3 A1 2.2 2.54 A2 2.2 2.6 b 1.0 1.4 1.65 2.13 b1 b2 2.87 3.12 C .4 .8 D 20.80 21.46 E 15.75 16.26 e 5.20 5.72 L 19.81 20.32 L1 4.50 ∅P 3.55 3.65 Q 5.89 6.40 R 4.32 5.49 S 6.15 BSC TO-3P (IXTQ) Outline TO-220 (IXTP) Outline Pins: 1 - Gate 3 - Source 2 - Drain 4 - Drain © 2009 IXYS CORPORATION, All Rights Reserved 2 - Drain Tab - Drain Inches Min. Max. .185 .209 .087 .102 .059 .098 .040 .055 .065 .084 .113 .123 .016 .031 .819 .845 .610 .640 0.205 0.225 .780 .800 .177 .140 .144 0.232 0.252 .170 .216 242 BSC IXTA102N15T IXTH102N15T IXTP102N15T IXTQ102N15T Fig. 1. Output Characteristics @ 25ºC 110 Fig. 2. Extended Output Characteristics @ 25ºC 300 VGS = 15V 10V 9V 8V 100 90 VGS = 15V 10V 9V 250 200 7V 70 ID - Amperes ID - Amperes 80 60 50 40 30 8V 150 7V 100 6V 20 50 10 6V 0 0 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 0 1.6 2 4 6 110 7V RDS(on) - Normalized ID - Amperes 14 16 VGS = 10V 2.6 80 70 60 6V 50 40 30 20 2.2 I D = 102A 1.8 I D = 51A 1.4 1.0 0.6 10 5V 0 0.2 0.0 0.4 0.8 1.2 1.6 2.0 2.4 2.8 3.2 3.6 4.0 -50 -25 0 VDS - Volts 25 50 75 100 125 150 175 TJ - Degrees Centigrade Fig. 5. RDS(on) Normalized to ID = 51A Value vs. Drain Current Fig. 6. Drain Current vs. Case Temperature 80 5.0 VGS = 10V 4.5 External Lead Current Limit 70 TJ = 175ºC 4.0 60 3.5 ID - Amperes RDS(on) - Normalized 12 3.0 VGS = 15V 10V 9V 8V 90 10 Fig. 4. RDS(on) Normalized to ID = 51A Value vs. Junction Temperature Fig. 3. Output Characteristics @ 150ºC 100 8 VDS - Volts VDS - Volts 3.0 2.5 2.0 TJ = 25ºC 50 40 30 20 1.5 10 1.0 0 0.5 0 40 80 120 160 200 240 280 ID - Amperes IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. -50 -25 0 25 50 75 100 TC - Degrees Centigrade 125 150 175 IXTA102N15T IXTH102N15T IXTP102N15T IXTQ102N15T Fig. 7. Input Admittance Fig. 8. Transconductance 120 160 100 90 g f s - Siemens 120 ID - Amperes TJ = - 40ºC 110 140 100 80 TJ = 150ºC 25ºC - 40ºC 60 80 25ºC 70 60 50 150ºC 40 30 40 20 20 10 0 0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0 0 7.5 20 40 60 VGS - Volts Fig. 9. Forward Voltage Drop of Intrinsic Diode 300 10 275 9 VDS = 75V 250 8 I G = 10mA 120 140 160 80 90 I D = 51A 7 200 VGS - Volts IS - Amperes 100 Fig. 10. Gate Charge 225 175 150 125 TJ = 150ºC 100 6 5 4 3 75 TJ = 25ºC 2 50 1 25 0 0 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 0 10 20 30 40 50 60 70 QG - NanoCoulombs VSD - Volts Fig. 11. Capacitance Fig. 12. Forward-Bias Safe Operating Area 10,000 1000.0 RDS(on) Limit Ciss 100.0 1,000 ID - Amperes Capacitance - PicoFarads 80 ID - Amperes Coss 25µs 100µs 10.0 1ms 100 Crss 1.0 10ms 100ms TJ = 175ºC DC TC = 25ºC Single Pulse f = 1 MHz 0.1 10 0 5 10 15 20 25 VDS - Volts © 2009 IXYS CORPORATION, All Rights Reserved 30 35 40 1 10 100 1000 VDS - Volts IXYS REF: F_102N15T(6E)90-30-08 IXTA102N15T IXTH102N15T IXTP102N15T IXTQ102N15T Fig. 13. Resistive Turn-on Rise Time vs. Junction Temperature Fig. 14. Resistive Turn-on Rise Time vs. Drain Current 18 19 RG = 3.3Ω 18 RG = 3.3Ω TJ = 125ºC VDS = 75V VDS = 75V t r - Nanoseconds t r - Nanoseconds 17 VGS = 10V 17 VGS = 10V 16 I 15 D = 102A 14 I 13 D = 51A 16 15 14 12 TJ = 25ºC 13 11 12 10 25 35 45 55 65 75 85 95 105 115 50 125 55 60 65 70 TJ - Degrees Centigrade Fig. 15. Resistive Turn-on Switching Times vs. Gate Resistance 80 TJ = 125ºC, VGS = 10V I D = 102A tf 28 28 RG = 3.3Ω, VGS = 10V 36 27 VDS = 75V 34 50 22 40 20 I D = 51A 18 20 10 0 8 10 12 14 16 18 40 26 32 25 30 I D = 51A 24 28 23 26 14 21 12 20 24 I D = 102A 25 20 35 45 TJ = 125ºC 30 22 26 21 TJ = 25ºC 20 60 65 70 75 80 105 115 20 125 85 90 95 tf td(off) - - - - 140 TJ = 125ºC, VGS = 10V VDS = 75V 200 120 I D = 102A 160 100 120 I D 80 = 51A 80 60 22 40 40 18 100 105 0 ID - Amperes IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 20 2 4 6 8 10 12 RG - Ohms 14 16 18 20 t d(off) - Nanoseconds 34 td(off) - - - - RG = 3.3Ω, VGS = 10V 55 95 160 240 38 t d(off) - Nanoseconds t f - Nanoseconds 25 50 85 280 42 VDS = 75V 75 Fig. 18. Resistive Turn-off Switching Times vs. Gate Resistance t f - Nanoseconds 26 23 65 TJ - Degrees Centigrade Fig. 17. Resistive Turn-off Switching Times vs. Drain Current tf 22 55 RG - Ohms 24 38 td(off) - - - - 22 16 6 105 29 24 4 100 30 60 2 95 30 26 30 90 t d(off) - Nanoseconds VDS = 75V 70 85 32 t f - Nanoseconds td(on) - - - - t d(on) - Nanoseconds t r - Nanoseconds tr 80 Fig. 16. Resistive Turn-off Switching Times vs. Junction Temperature 100 90 75 ID - Amperes IXTA102N15T IXTH102N15T IXTP102N15T IXTQ102N15T Fig. 19. Maximum Transient Thermal Impedance Z (th)JC - ºC / W 1.00 0.10 0.01 0.0001 0.001 0.01 0.1 1 10 Pulse Width - Seconds © 2009 IXYS CORPORATION, All Rights Reserved IXYS REF: F_102N15T(6E)90-30-08 Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics.