IXTH102N20T

Preliminary Technical Information TrenchTM Power MOSFETs IXTQ102N20T IXTH102N20T VDSS ID25 = 200V = 102A   23m RDS(on) N-Channel Enhancement Mode Avalanche Rated TO-3P (IXTQ) G D Symbol Test Conditions Maximum Ratings VDSS TJ = 25C to 175C 200 V VDGR TJ = 25C to 175C, RGS = 1M 200 V VGSM Transient  30 V ID25 TC = 25C 102 A ILRMS Lead Current Limit, RMS 75 A IDM TC = 25C, pulse width limited by TJM 250 A IA TC = 25C 5 A EAS TC = 25C 1.2 J dv/dt IS  IDM, VDD  VDSS, TJ  175°C 7 V/ns PD TC = 25C 750 W S TO-247 (IXTH) G  C TJM 175  C Tstg -55 ... +175  C Features 300 260 °C °C  1.13 / 10 Nm/lb.in 5.5 6.0 g g TL TSOLD Maximum Lead Temperature for Soldering Plastic Body for 10s Md Mounting torque Weight TO-3P TO-247 D    D (Tab) S G = Gate S = Source -55 ... +175 TJ D (Tab) D = Drain Tab = Drain Ultra-low On Resistance Unclamped Inductive Switching (UIS) rated Low package inductance - easy to drive and to protect 175 C Operating Temperature Advantages   Easy to mount Space savings High power density Symbol Test Conditions (TJ = 25C unless otherwise specified) Characteristic Values Min. Typ. Max.  BV DSS VGS = 0V, ID = 250A 200 V Applications VGS(th) VDS = VGS, ID = 1mA 2.5 V  IGSS VGS =  20V, VDS = 0V IDSS VDS = VDSS, VGS = 0V 4.5              200 nA 5 RDS(on) VGS = 10V, ID = 0.5 • ID25, Note 1 A 250  A TJ = 150C 18 23 m    © 2013 IXYS CORPORATION, All Rights Reserved Automotive - Motor Drives - High Side Switch - 12V Battery - ABS Systems DC/DC Converters and Off-line UPS Primary- Side Switch High Current Switching Applications DS99821A(10/13) IXTQ102N20T IXTH102N20T Symbol Test Conditions Characteristic Values TO-247 Outline (TJ = 25C unless otherwise specified) Min. Typ. gfs 55 92 S 6800 pF 722 pF 126 pF 19 ns 26 ns 50 ns 25 ns 114 nC 34 nC 31 nC 0.25 0.20C/W C/W VDS= 10V, ID = 0.5 • ID25, Note 1 Ciss Coss VGS = 0V, VDS = 25V, f = 1MHz C rss td(on) tr td(off) tf Resistive Switching Times VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 RG = 2.5 (External) Qg(on) Qgs VGS= 10V, VDS = 0.5 • VDSS, ID = 25A Qgd RthJC RthCH Max. 1 e VGS = 0V 102 A ISM Repetitive, pulse width limited by TJM 330 A VSD IF = 50A, VGS = 0V, Note 1 1.2 V t rr IF = 50A, VGS = 0V, -di/dt = 100A/s VR = 50V Note: 130 2 - Drain Dim. Millimeter Inches Min. Max. Min. Max. A 4.7 5.3 .185 .209 2.2 2.54 .087 .102 A1 A2 2.2 2.6 .059 .098 b 1.0 1.4 .040 .055 b1 1.65 2.13 .065 .084 b2 2.87 3.12 .113 .123 C .4 .8 .016 .031 D 20.80 21.46 .819 .845 E 15.75 16.26 .610 .640 e 5.20 5.72 0.205 0.225 L 19.81 20.32 .780 .800 L1 4.50 .177  P 3.55 3.65 .140 .144 Q 5.89 6.40 0.232 0.252 R 4.32 5.49 .170 .216 Characteristic Values Min. Typ. Max. IS P 3 Terminals: 1 - Gate Source-Drain Diode Symbol Test Conditions TJ = 25C unless otherwise specified) 2 TO-3P Outline ns 1. Pulse test, t  300s, duty cycle, d  2%. Pins: 1 - Gate 3 - Source 2 - Drain 4 - Drain PRELIMANARYTECHNICALINFORMATION The product presented herein is under development. The Technical Specifications offered are derived from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a "considered reflection" of the anticipated result. IXYS reserves the right to change limits, test conditions, and dimensions without notice. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,860,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,710,405 B2 6,710,463 6,727,585 7,005,734 B2 6,759,692 7,063,975 B2 6,771,478 B2 7,071,537 7,157,338B2 IXTQ102N20T IXTH102N20T Fig. 1. Output Characteristics @ 25ºC Fig. 2. Extended Output Characteristics @ 25ºC 110 240 VGS = 10V 8V 7V 100 90 200 180 7V 160 70 ID - Amperes ID - Amperes 80 6V 60 50 40 30 140 120 100 6V 80 60 20 40 5V 10 20 0 0 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2 2.2 5V 0 2 4 6 8 10 12 14 16 18 VDS - Volts VDS - Volts Fig. 3. Output Characteristics @ 150ºC Fig. 4. RDS(on) Normalized to ID = 51A Value vs. Junction Temperature 110 20 3.5 V GS = 10V 8V 7V 100 90 VGS = 10V 3.0 70 RDS(on) - Normalized 80 ID - Amperes VGS = 10V 9V 8V 220 6V 60 50 40 30 5V 20 2.5 I D = 102A 2.0 I D = 51A 1.5 1.0 10 0 0.5 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 5.5 6 -50 -25 0 Fig. 5. RDS(on) Normalized to ID = 51A Value vs. Drain Current 50 75 100 125 150 175 Fig. 6. Drain Current vs. Case Temperature 5.0 90 VGS = 10V 4.5 External Lead Current Limit 80 4.0 70 TJ = 175ºC 3.5 ID - Amperes RDS(on) - Normalized 25 TJ - Degrees Centigrade VDS - Volts 3.0 2.5 60 50 40 2.0 30 1.5 20 1.0 10 TJ = 25ºC 0 0.5 0 20 40 60 80 100 120 140 I D - Amperes © 2013 IXYS CORPORATION, All Rights Reserved 160 180 200 -50 -25 0 25 50 75 100 TC - Degrees Centigrade 125 150 175 IXTQ102N20T IXTH102N20T Fig. 7. Input Admittance Fig. 8. Transconductance 180 160 160 140 120 120 g f s - Siemens ID - Amperes 140 TJ = - 40ºC 100 80 TJ = 150ºC 25ºC - 40ºC 60 25ºC 100 80 150ºC 60 40 40 20 20 0 0 3.4 3.8 4.2 4.6 5 5.4 5.8 6.2 0 6.6 20 40 60 80 VGS - Volts 100 120 140 160 180 200 I D - Amperes Fig. 9. Forward Voltage Drop of Intrinsic Diode Fig. 10. Gate Charge 300 10 VDS = 100V 9 250 I D = 25A 8 VGS - Volts IS - Amperes I G = 10mA 7 200 150 TJ = 150ºC 100 6 5 4 3 TJ = 25ºC 2 50 1 0 0 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 0 20 30 40 50 60 70 80 90 100 110 120 QG - NanoCoulombs Fig. 11. Capacitance Fig. 12. Maximum Transient Thermal Impedance 10,000 1.00 C iss f = 1 MHz 1,000 Z(th)JC - ºC / W Capacitance - PicoFarads 10 VSD - Volts C oss 0.10 C rss 100 0 5 10 15 20 25 30 35 40 VDS - Volts IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 0.01 0.0001 0.001 0.01 0.1 Pulse Width - Seconds 1 10 IXTQ102N20T IXTH102N20T Fig. 13. Resistive Turn-on Rise Time vs. Junction Temperature Fig. 14. Resistive Turn-on Rise Time vs. Drain Current 27 27 RG = 2.5 VGS = 15V 26 26 25 24 TJ = 25ºC RG = 2.5 t r - Nanoseconds t r - Nanoseconds VDS = 100V I D = 102A 23 VGS = 15V 25 VDS = 100V 24 23 I D = 51A 22 TJ = 125ºC 22 21 21 25 35 45 55 65 75 85 95 105 115 50 125 55 60 65 70 TJ - Degrees Centigrade Fig. 15. Resistive Turn-on Switching Times vs. Gate Resistance TJ = 125ºC, VGS = 15V 25 70 t r - Nanoseconds 22 I D = 102A, 51A 24 21 22 20 7 8 9 60 22 55 21 td(off) - - - - tf 20 18 10 25 35 45 67 150 65 TJ = 125ºC, VGS = 15V 140 60 V DS = 100V 130 TJ = 25ºC 49 t f - Nanoseconds 52 55 100 40 90 35 80 30 70 25 60 50 19 43 20 40 100 105 15 80 85 90 95 I D - Amperes © 2013 IXYS CORPORATION, All Rights Reserved 110 I D = 51A, 102A 45 46 18 120 50 20 TJ = 125ºC 160 - Nanoseconds 22 75 35 125 td(off) - - - - 58 70 115 tf 55 65 105 70 23 60 95 d( of f ) TJ = 25ºC 55 85 75 61 50 75 t 25 21 65 70 64 VDS = 100V 24 55 Fig. 18. Resistive Turn-off Switching Times vs. Gate Resistance t d ( o f f ) - Nanoseconds t f - Nanoseconds td(off) - - - - RG = 2.5, VGS = 15V 26 40 TJ - Degrees Centigrade 28 TJ = 125ºC 45 V DS = 100V Fig. 17. Resistive Turn-off Switching Times vs. Drain Current 27 50 I D = 102A RG - Ohms tf 65 23 19 19 6 I D = 51A 24 RG = 2.5, VGS = 15V 20 5 105 t d ( o f f ) - Nanoseconds 23 t d ( o n ) - Nanoseconds 28 4 100 25 24 3 95 75 VDS = 100V 2 90 26 30 26 85 26 td(on) - - - - t f - Nanoseconds 32 80 Fig. 16. Resistive Turn-off Switching Times vs. Junction Temperature 34 tr 75 I D - Amperes 40 2 3 4 5 6 7 8 9 10 RG - Ohms IXYS REF: T_102N20T(7W)4-13-07-A