IXTH10N100D

IXTH10N100D IXTT10N100D Depletion Mode MOSFET VDSX ID25 RDS(on) = =  1000V 10A  1.4 N-Channel TO-268 (IXTT) G S Symbol Test Conditions VDSX TJ = 25C to 150C Maximum Ratings 1000 V VDGX TJ = 25C to 150C, RGS = 1M 1000 V VGSX Continuous 30 V VGSM Transient 40 V ID25 TC = 25C 10 A IDM TC = 25C, Pulse Width Limited by TJM 20 A PD TC = 25C 400 W - 55 ... +150 150 - 55 ... +150 C C C 300 260 °C °C 1.13 / 10 Nm/lb.in. 4 6 g g TJ TJM Tstg TL TSOLD Maximum Lead Temperature for Soldering 1.6 mm (0.062in.) from Case for 10s Md Mounting Torque (TO-247) Weight TO-268 TO-247 D (Tab) TO-247 (IXTH) G D D (Tab) S G = Gate S = Source D = Drain Tab = Drain Features • Normally ON Mode • International Standard Packages • Molding Epoxies meet UL 94 V-0 Flammability Classification Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max. BVDSX VGS = -10V, ID = 250A 1000 VGS(off) VDS = 25V, ID = 250A -1.5 IGSX VGS = 30V, VDS = 0V IDSX(off) VDS = VDSX, VGS = -10V V - 3.5 VGS = 10V, ID = 10A, Note 1 ID(on) VGS = 0V, VDS = 25V, Note 1 V • Easy to Mount • Space Savings • High Power Density 100 nA 25 A 500 A TJ = 125C RDS(on) Advantages ©2019 IXYS CORPORATION, All Rights Reserved 1.4 1.0  A Applications • • • • • Level Shifting Triggers Solid State Relays Current Regulators Active Load DS99529E(5/19) IXTT10N100D IXTH10N100D Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) gfs Characteristic Values Min. Typ. Max. VDS = 30V, ID = 0.5 • ID25, Note 1 3.0 Ciss Coss 5.4 S 2500 pF VGS = -10V, VDS = 25V, f = 1MHz Crss td(on) tr td(off) tf Resistive Switching Times VGS = -10V, VDS = 0.5 • VDSX, ID = 0.5 • ID25 RG = 4.7 (External) Qg(on) Qgs VGS = 10V, VDS = 0.5 • VDSX, ID = 0.5 • ID25 Qgd 300 pF 100 pF 35 ns 85 ns 110 ns 75 ns 130 nC 27 nC 58 nC 0.31 C/W RthJC RthCS TO-247 0.21 C/W Source-Drain Diode Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) VSD IF = ID25, VGS = -10V, Note 1 trr IF = 10A, -di/dt = 100A/s VR = 100V, VGS = -10V Note Characteristic Values Min. Typ. Max. 1.1 850 1.5 V ns 1: Pulse test, t  300s, duty cycle, d  2%. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,860,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 IXTT10N100D IXTH10N100D o o Fig. 1. Output Characteristics @ TJ = 25 C Fig. 2. Extended Output Characteristics @ TJ = 25 C 20 10 VGS = 5V 4V 3V 9 8 16 7 14 I D - Amperes I D - Amperes VGS = 5V 4V 18 6 2V 5 4 3 3V 12 10 8 2V 6 1V 2 1V 4 1 2 0V -1V 0 0 2 4 6 0V - 1V 0 8 10 12 14 0 5 10 15 2.8 10 VGS = 5V 4V 3V 8 VGS = 10V RDS(on) - Normalized I D - Amperes 2V 5 4 1V 3 2 0V 1 30 2.4 7 6 25 Fig. 4. RDS(on) Normalized to ID = 5A Value vs. Junction Temperature o Fig. 3. Output Characteristics @ TJ = 125 C 9 20 VDS - Volts VDS - Volts 2.0 I D = 10A 1.6 I D = 5A 1.2 0.8 -1V 0.4 0 0 5 10 15 20 25 -50 30 -25 0 VDS - Volts Fig. 5. RDS(on) Normalized to ID = 5A Value vs. Drain Current 2.4 25 50 75 100 125 150 TJ - Degrees Centigrade 2.2 Fig. 6. Maximum Drain Current vs. Case Temperature 10 VGS = 10V 8 1.8 I D - Amperes RDS(on) - Normalized o TJ = 125 C 2.0 1.6 1.4 6 4 o 1.2 TJ = 25 C 2 1.0 0.8 0 0 2 4 6 8 10 12 I D - Amperes ©2019 IXYS CORPORATION, All Rights Reserved 14 16 18 20 -50 -25 0 25 50 75 TC - Degrees Centigrade 100 125 150 IXTT10N100D IXTH10N100D Fig. 8. Transconductance Fig. 7. Input Admittance 10 9 9 8 8 7 g f s - Siemens I D - Amperes 7 6 5 4 TJ = 125 C 3 25 C o - 40 C o o 5 o TJ = - 40 C o 25 C o 125 C 4 3 2 2 1 1 0 0 -2.0 -1.5 -1.0 -0.5 0.0 0.5 1.0 1.5 2.0 2.5 0 1 2 3 5 6 7 8 9 I D - Amperes Fig. 9. Forward Voltage Drop of Intrinsic Diode Fig. 10. Breakdown & Threshold Voltages vs. Junction Temperature 1.5 VGS = -10V 10 1.4 BVDSS / VGS(off) - Normalized 25 20 15 10 o TJ = 125 C VGS(off) @ VDS = 25V 1.3 1.2 1.1 1.0 BVDSS @ VGS = -10V 0.9 o TJ = 25 C 5 0.8 0.7 0 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 -50 1.4 -25 0 VSD - Volts 25 50 75 100 125 150 30 35 40 TJ - Degrees Centigrade Fig. 11. Gate Charge Fig. 12. Capacitance 10 10,000 f = 1 MHz VDS = 500V 8 Ciss Capacitance - PicoFarads I D = 5A I G = 10mA 6 VGS - Volts 4 VGS - Volts 30 I S - Amperes 6 1,000 4 2 0 -2 Coss 100 C rss -4 -6 10 0 20 40 60 80 100 120 140 QG - NanoCoulombs IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 0 5 10 15 20 VDS - Volts 25 IXTT10N100D IXTH10N100D Fig. 13. Forward-Bias Safe Operating Area Fig. 14. Forward-Bias Safe Operating Area @ TC = 25oC @ TC = 75oC 100 100 o TJ = 150 C o TJ = 150 C o TC = 75 C o TC = 75 C Single Pulse Single Pulse RDS(on) Limit RDS(on) Limit 25μs 10 10 25μs I D - Amperes I D - Amperes 100μs 1ms 100μs 1ms 1 1 10ms 10ms 100ms DC DC 100ms 0.1 0.1 10 100 1,000 10,000 10 100 1,000 10,000 VDS - Volts VDS - Volts Fig. 15. Maximum Transient Thermal Impedance Z (th)JC - K / W 1 0.1 0.01 0.0001 0.001 0.01 0.1 1 10 Pulse Width - Seconds ©2019 IXYS CORPORATION, All Rights Reserved IXYS REF: T_10N100D(7N)12-10-12-C IXTT10N100D IXTH10N100D TO-268 Outline 1 - Gate 2,4 - Drain 3 - Source TO-247 Outline 1 - Gate 2,4 - Drain 3 - Source IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXTT10N100D IXTH10N100D Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. 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