IXTH120P065T

IXTA120P065T IXTP120P065T IXTH120P065T TrenchPTM Power MOSFETs VDSS ID25 = = ≤ RDS(on) P-Channel Enhancement Mode Avalanche Rated - 65V - 120A Ω 10mΩ TO-263 AA (IXTA) G S D (Tab) TO-220AB (IXTP) Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C - 65 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ - 65 V VGSS Continuous ±15 V VGSM Transient ±25 V DS ID25 TC = 25°C - 120 A TO-247 (IXTH) IDM TC = 25°C, Pulse Width Limited by TJM - 360 A IA EAS TC = 25°C TC = 25°C - 60 1 A J PD TC = 25°C 298 W -55 ... +150 150 -55 ... +150 °C °C °C G = Gate S = Source 300 260 °C °C Features 1.13/10 Nm/lb.in. 2.5 3.0 6.0 g g g TJ TJM Tstg TL TSOLD 1.6mm (0.062 in.) from Case for 10s Plastic Body for 10s Md Mounting Torque (TO-220 & TO-247) Weight TO-263 TO-220 TO-247 G G D S D (Tab) D (Tab) D = Drain Tab = Drain z International Standard Packages Avalanche Rated z Extended FBSOA z Fast Intrinsic Diode z Low RDS(ON) and QG z Advantages Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max. BVDSS VGS = 0V, ID = - 250μA - 65 VGS(th) VDS = VGS, ID = - 250μA - 2.0 IGSS VGS = ± 15V, VDS = 0V ±100 nA IDSS VDS = VDSS, VGS = 0V - 10 μA - 750 μA RDS(on) VGS = -10V, ID = 0.5 • ID25, Note 1 TJ = 125°C V - 4.0 V 10 mΩ z z z Applications z z z z z z © 2013 IXYS CORPORATION, All Rights Reserved Easy to Mount Space Savings High Power Density High-Side Switching Push Pull Amplifiers DC Choppers Automatic Test Equipment Current Regulators Battery Charger Applications DS100026B(01/13) IXTA120P065T IXTH120P065T IXTP120P065T Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) gfs Characteristic Values Min. Typ. Max. VDS = -10V, ID = 0.5 • ID25, Note 1 45 Ciss Coss VGS = 0V, VDS = - 25V, f = 1MHz tr td(off) tf S 13.2 nF pF 505 pF Resistive Switching Times VGS = -10V, VDS = - 33V, ID = - 50A RG = 1Ω (External) Qg(on) Qgs 75 1345 Crss td(on) VGS = -10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 Qgd 31 ns 28 ns 38 ns 21 ns 185 nC 55 nC 58 nC (TO-220) (TO-247) 0.50 0.21 Source-Drain Diode Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) °C/W °C/W Characteristic Values Min. Typ. Max. IS VGS = 0V - 120 A ISM Repetitive, Pulse Width Limited by TJM - 480 A VSD IF = - 60A, VGS = 0V, Note 1 -1.3 V trr QRM IRM IF = - 60A, -di/dt = -100A/μs VR = - 33V, VGS = 0V Note 1 = Gate 2 = Drain 3 = Source 0.42 °C/W RthJC RthCS TO-247 Outline 53 77 - 2.9 ns nC A TO-220 Outline 1. Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%. TO-263 Outline 1. 2. 3. 4. Gate Drain Source Drain Dim. Millimeter Min. Max. Inches Min. Max. A b b2 4.06 0.51 1.14 4.83 0.99 1.40 .160 .020 .045 .190 .039 .055 c c2 0.40 1.14 0.74 1.40 .016 .045 .029 .055 D D1 8.64 8.00 9.65 8.89 .340 .280 .380 .320 E 9.65 10.41 .380 .405 E1 e L L1 L2 L3 L4 6.22 2.54 14.61 2.29 1.02 1.27 0 8.13 BSC 15.88 2.79 1.40 1.78 0.13 .270 .100 .575 .090 .040 .050 0 .320 BSC .625 .110 .055 .070 .005 Pins: 1 - Gate 3 - Source 2 - Drain 4 - Drain IXYS Reserves The Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,860,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 IXTA120P065T IXTH120P065T IXTP120P065T Fig. 1. Output Characteristics @ T J = 25ºC Fig. 2. Extended Output Characteristics @ T J = 25ºC -350 -120 VGS = -10V - 9V - 8V -100 VGS = -10V - 9V -300 - 8V - 7V -250 ID - Amperes ID - Amperes -80 - 6V -60 -40 - 7V -150 -100 -20 - 5V - 6V -50 - 5V 0 0 0 -0.2 -0.4 -0.6 -0.8 -1 -1.2 0 -1.4 -2 -4 -6 -8 -10 -12 -14 -16 -18 VDS - Volts VDS - Volts Fig. 3. Output Characteristics @ T J = 125ºC Fig. 4. RDS(on) Normalized to ID = - 60A Value vs. Junction Temperature -120 -20 1.8 VGS = -10V - 9V - 8V VGS = -10V 1.6 R DS(on) - Normalized -100 - 7V -80 ID - Amperes -200 - 6V -60 -40 I D = -120A 1.4 I D = - 60A 1.2 1.0 - 5V -20 0.8 0 0.6 0 -0.2 -0.4 -0.6 -0.8 -1 -1.2 -1.4 -1.6 -1.8 -2 -50 0 25 50 75 100 TJ - Degrees Centigrade Fig. 5. RDS(on) Normalized to ID = - 60A Value vs. Drain Current Fig. 6. Maximum Drain Current vs. Case Temperature 1.8 125 150 125 150 -140 VGS = -10V -120 TJ = 125ºC 1.6 -100 ID - Amperes R DS(on) - Normalized -25 VDS - Volts 1.4 1.2 TJ = 25ºC -80 -60 -40 1.0 -20 0 0.8 0 -60 -120 -180 -240 ID - Amperes © 2013 IXYS CORPORATION, All Rights Reserved -300 -360 -50 -25 0 25 50 75 TC - Degrees Centigrade 100 IXTA120P065T IXTH120P065T IXTP120P065T Fig. 8. Transconductance Fig. 7. Input Admittance -180 TJ = - 40ºC 100 -160 -140 80 g f s - Siemens ID - Amperes -120 -100 -80 TJ = 125ºC 25ºC - 40ºC -60 -40 25ºC 125ºC 60 40 20 -20 0 -3.0 0 -3.5 -4.0 -4.5 -5.0 -5.5 -6.0 -6.5 0 -20 -40 -60 VGS - Volts Fig. 9. Forward Voltage Drop of Intrinsic Diode -100 -120 -140 -160 -180 180 200 Fig. 10. Gate Charge -10 -300 VDS = - 33V -9 -250 I D = - 60A -8 I G = -1mA -7 VGS - Volts -200 IS - Amperes -80 ID - Amperes -150 TJ = 125ºC -100 -6 -5 -4 -3 TJ = 25ºC -2 -50 -1 0 -0.4 0 -0.5 -0.6 -0.7 -0.8 -0.9 -1.0 -1.1 -1.2 -1.3 -1.4 0 -1.5 20 40 60 VSD - Volts 80 100 120 140 160 QG - NanoCoulombs Fig. 11. Capacitance Fig. 12. Forward-Bias Safe Operating Area - 1,000 100,000 f = 1 MHz RDS(on) Limit 100µs 1ms 25µs 10,000 - 100 Ciss ID - Amperes Capacitance - PicoFarads 10ms Coss 1,000 External Lead Current Limit - 10 TC = 25ºC Single Pulse 100 0 -5 -10 -15 -20 -25 DC, 100ms TJ = 150ºC Crss -30 -35 -40 VDS - Volts IXYS Reserves The Right to Change Limits, Test Conditions, and Dimensions. -1 -1 - 10 VDS - Volts - 100 IXTA120P065T IXTH120P065T IXTP120P065T Fig. 14. Resistive Turn-on Rise Time vs. Drain Current Fig. 13. Resistive Turn-on Rise Time vs. Junction Temperature 32 32 RG = 1Ω, VGS = -10V 30 28 28 t r - Nanoseconds t r - Nanoseconds VDS = - 33V 24 20 16 I D = - 25A I D = - 50A TJ = 25ºC 26 RG = 1Ω, VGS = -10V VDS = - 33V 24 22 20 TJ = 125ºC 18 12 16 25 35 45 55 65 75 85 95 105 115 125 -26 -30 -34 TJ - Degrees Centigrade Fig. 15. Resistive Turn-on Switching Times vs. Gate Resistance 80 70 60 100 50 80 40 60 30 40 20 20 10 0 t f - Nanoseconds 120 2 4 6 8 10 12 14 16 22 21 50 20 40 18 25 18 35 45 55 62 58 RG = 1Ω, VGS = - 10V VDS = - 33V 54 50 TJ = 25ºC 21 46 TJ = 125ºC 20 42 19 38 TJ = 25ºC 18 34 -34 -38 105 115 35 125 300 180 tf 160 TJ = 125ºC, VGS = -10V 270 td(off) - - - - 240 VDS = - 33V 140 120 210 180 I D = - 50A 100 150 80 120 60 90 I D = - 25A 40 -30 95 -42 ID - Amperes © 2013 IXYS CORPORATION, All Rights Reserved -46 -50 60 20 30 0 0 0 2 4 6 8 10 RG - Ohms 12 14 16 18 t d(off) - Nanoseconds TJ = 125ºC 22 -26 85 200 t f - Nanoseconds td(off) - - - - t d(off) - Nanoseconds t f - Nanoseconds 75 Fig. 18. Resistive Turn-off Switching Times vs. Gate Resistance 25 23 65 TJ - Degrees Centigrade Fig. 17. Resistive Turn-off Switching Times vs. Drain Current 24 45 I D = - 50A RG - Ohms tf 55 I D = - 25A 19 0 0 60 VDS = - 33V t d(off) - Nanoseconds I D = - 50A, - 25A td(off) - - - - RG = 1Ω, VGS = -10V 23 VDS = - 33V -50 65 tf t d(on) - Nanoseconds t r - Nanoseconds td(on) - - - - TJ = 125ºC, VGS = -10V 140 -46 24 90 tr -42 Fig. 16. Resistive Turn-off Switching Times vs. Junction Temperature 180 160 -38 ID - Amperes IXTA120P065T IXTH120P065T IXTP120P065T Fig. 19. Maximum Transient Thermal Impedance Z (th)JC - ºC / W 1 0.1 0.01 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 Pulse Width - Seconds IXYS Reserves The Right to Change Limits, Test Conditions, and Dimensions. IXYS REF: T_120P065T(A6)11-08-10-A Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. 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