IXTH12N100

MegaMOSTMFET IXTH / IXTM 10N100 IXTH / IXTM 12N100 VDSS ID25 RDS(on) 1000 V 1000 V 10 A 12 A 1.20 Ω 1.05 Ω N-Channel Enhancement Mode Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C VDGR TJ = 25°C to 150°C; RGS = 1 MΩ VGS Continuous VGSM Transient ID25 TC = 25°C IDM TC = 25°C, pulse width limited by TJM PD TC = 25°C TJM 10N100 12N100 V V ±20 V ±30 V 10 12 A A 40 48 A A 300 W -55 ... +150 °C 150 °C -55 ... +150 °C O T stg Mounting torque Weight 1000 1000 G G = Gate, S = Source, D = Drain, TAB = Drain 1.13/10 Nm/lb.in. TO-204 = 18 g, TO-247 = 6 g °C 300 BS Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s Test Conditions O Symbol D (TAB) TO-204 AA (IXTM) LE 10N100 12N100 TJ Md TO-247 AD (IXTH) TE Symbol VDSS VGS = 0 V, ID = 3 mA VGS(th) VDS = VGS, ID = 250 µA IGSS VGS = ±20 VDC, VDS = 0 IDSS VDS = 0.8 • VDSS VGS = 0 V R DS(on) VGS = 10 V, ID = 0.5 ID25 l l l l l Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 1000 2 TJ = 25°C TJ = 125°C 10N100 12N100 Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 % IXYS reserves the right to change limits, test conditions, and dimensions. © 2000 IXYS All rights reserved Features V 4.5 V ±100 nA 250 1 µA mA 1.20 1.05 Ω Ω International standard packages Low RDS (on) HDMOSTM process Rugged polysilicon gate cell structure Low package inductance (< 5 nH) - easy to drive and to protect Fast switching times Applications l l l l Switch-mode and resonant-mode power supplies Motor controls Uninterruptible Power Supplies (UPS) DC choppers Advantages l l l Easy to mount with 1 screw (TO-247) (isolated mounting screw hole) Space savings High power density 91540E(5/96) 1-4 IXTH 10 N100 IXTM 10 N100 Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. gfs VDS = 10 V; ID = 0.5 • ID25, pulse test 6 C iss C oss VGS = 0 V, VDS = 25 V, f = 1 MHz C rss S 4000 pF 310 pF 70 pF 21 50 ns tr VGS = 10 V, VDS = 0.5 • VDSS, ID = 0.5 ID25 33 50 ns td(off) RG = 2 Ω, (External) 62 100 ns 32 50 ns 150 170 nC 30 45 nC 55 80 nC tf Q g(on) Q gs VGS = 10 V, VDS = 0.5 • VDSS, ID = 0.5 ID25 Q gd R thJC 0.42 R thCK Test Conditions IS VGS = 0 V ISM Repetitive; pulse width limited by TJM VSD IF = IS, VGS = 0 V, Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 % A A 10N100 12N100 40 48 A A 1.5 V O 10 12 BS O © 2000 IXYS All rights reserved 3 2 - Drain Tab - Drain Dim. K/W 10N100 12N100 IF = IS, -di/dt = 100 A/µs, VR = 100 V 2 Terminals: 1 - Gate 3 - Source K/W Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. Symbol t rr 1 LE 0.25 Source-Drain Diode TO-247 AD (IXTH) Outline TE t d(on) 12 IXTH 12 N100 IXTM 12 N100 1000 Millimeter Inches Min. Max. Min. Max. A 4.7 5.3 .185 .209 A1 2.2 2.54 .087 .102 A2 2.2 2.6 .059 .098 b 1.0 1.4 .040 .055 b1 1.65 2.13 .065 .084 b2 2.87 3.12 .113 .123 C .4 .8 .016 .031 D 20.80 21.46 .819 .845 E 15.75 16.26 .610 .640 e 5.20 5.72 0.205 0.225 L 19.81 20.32 .780 .800 L1 4.50 .177 ∅ P 3.55 3.65 .140 .144 Q 5.89 6.40 0.232 0.252 R 4.32 5.49 .170 .216 S 6.15 BSC 242 BSC TO-204AA (IXTM) Outline ns Pins Dim. 1 - Gate 2 - Source Case - Drain Millimeter Min. Max. 6.4 11.4 3.42 .97 1.09 22.22 10.67 11.17 5.21 5.71 Inches Min. Max. .250 .450 .135 .038 .043 .875 .420 .440 .205 .225 L 7.93 ∅ p 3.84 4.19 ∅p 1 3.84 4.19 q 30.15 BSC R 13.33 R1 4.77 s 16.64 17.14 .312 .151 .165 .151 .165 1.187 BSC .525 .188 .655 .675 A A1 ∅b ∅D e e1 IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 2-4 IXTH 10 N100 IXTM 10 N100 Fig. 1 Output Characteristics 20 Fig. 2 Input Admittance TJ = 25°C 18 20 VGS = 10V 18 7V 16 6V ID - Amperes 14 12 10 8 6 12 TJ = 25°C 10 8 6 4 2 2 0 0 0 5 10 15 20 VDS - Volts 0 1 2 3 4 6 7 8 9 10 Fig. 4 Temperature Dependence of Drain to Source Resistance LE 1.5 5 VGS - Volts Fig. 3 RDS(on) vs. Drain Current 2.50 TJ = 25°C 2.25 1.4 RDS(on) - Normalized 14 TE 5V 4 1.3 1.2 O VGS = 10V VGS = 15V 1.1 BS 1.0 RDS(on) - Normalized ID - Amperes 16 0 5 10 15 20 2.00 1.75 1.50 1.00 0.50 -50 25 -25 0 ID - Amperes 1.2 O 18 75 VGS(th) BV/VG(th) - Normalized 12N100 12 10 10N100 6 4 100 125 150 BVDSS 1.1 16 1.0 0.9 0.8 0.7 0.6 2 0 -50 50 Fig. 6 Temperature Dependence of Breakdown and Threshold Voltage 20 8 25 TJ - Degrees C Fig. 5 Drain Current vs. Case Temperature 14 ID = 6A 1.25 0.75 0.9 ID - Amperes IXTH 12 N100 IXTM 12 N100 -25 0 25 50 75 TC - Degrees C © 2000 IXYS All rights reserved 100 125 150 0.5 -50 -25 0 25 50 75 100 125 150 TJ - Degrees C 3-4 IXTH 10 N100 IXTM 10 N100 Fig.7 Gate Charge Characteristic Curve IXTH 12 N100 IXTM 12 N100 Fig.8 Forward Bias Safe Operating Area 10 10µs VDS = 500V ID = 6A IG = 10mA 9 8 10 Limited by RDS(on) ID - Amperes 6 5 4 2 1 0 1ms 1 10ms 100ms 0.1 0 25 50 75 100 125 150 1 Gate Charge - nCoulombs 100 1000 Fig.10 Source Current vs. Source to Drain Voltage LE 4500 10 VDS - Volts Fig.9 Capacitance Curves 20 Ciss 4000 18 16 3500 3000 2500 f = 1MHz VDS = 25V 2000 O Capacitance - pF 100µs TE 3 1500 1000 Coss 500 BS Crss ID - Amperes VGS - Volts 7 0 0 5 10 15 14 12 10 6 TJ = 25°C 4 2 0 0.0 20 TJ = 125°C 8 0.2 VDS - Volts 0.4 0.6 0.8 1.0 1.2 1.4 VSD - Volts Fig.11 Transient Thermal Impedance Thermal Response - K/W O 1 D=0.5 0.1 D=0.2 D=0.1 D=0.05 0.01 D=0.02 D=0.01 Single Pulse 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 Time - Seconds © 2000 IXYS All rights reserved 4-4