IXTH12N100L

IXTH12N100L LinearTM Power MOSFET w/ Extended FBSOA VDSS ID25 RDS(on) = 1000V = 12A ≤ 1.3Ω Ω N-Channel Enhancement Mode Avalanche Rated TO-247 Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 1000 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ 1000 V VGSS Continuous ±30 V VGSM Transient ±40 V ID25 TC = 25°C 12 A IDM TC = 25°C, Pulse Width Limited by TJM 25 A IA EAS TC = 25°C TC = 25°C 12 1.5 A J PD TC = 25°C 400 W -55...+150 °C TJM 150 °C Tstg -55...+150 °C TJ TL 1.6mm (0.063 in.) from Case for 10s 300 °C TSOLD Plastic Body for 10s 260 °C Md Mounting Torque 1.13/10 Nm/lb.in. 6 g Weight G D Tab S G = Gate S = Source D = Drain Tab = Drain Features • International Standard Package • Designed for Linear Operation • Avalanche Rated • Molding Epoxy Meets UL94 V-0 Flammability Classification Advantages • Easy to Mount • Space Savings • High Power Density Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max. BVDSS VGS = 0V, ID = 250μA 1000 VGS(th) VDS = VGS, ID = 250μA 3.5 IGSS VGS = ±30V, VDS = 0V IDSS VDS = VDSS, VGS = 0V RDS(on) VGS = 20V, ID = 0.5 • IDSS, Note 1 TJ = 125°C © 2010 IXYS CORPORATION, All Rights Reserved V 5.5 V ±100 nA 50 μA 500 μA 1.3 Ω Applications • • • • • • Programmable Loads Current Regulators DC-DC Converters Battery Chargers DC Choppers Temperature and Lighting Controls DS99126B(04/10) IXTH12N100L Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max. gfs 3.0 VDS = 20V, ID = 0.5 • IDSS, Note 1 Ciss Coss VGS = 0V, VDS = 25V, f = 1MHz Crss td(on) Resistive Switching Times tr VGS = 15V, VDS = 0.5 • VDSS, ID = 0.5 • IDSS td(off) RG = 4.7Ω (External) tf Qg(on) Qgs VGS = 20V, VDS = 0.5 • VDSS, ID = 0.5 • IDSS Qgd TO-247 (IXTH) Outline 5.0 S 2500 pF 300 pF 95 pF 1 30 ns ns 110 ns 65 ns e 155 nC Terminals: 1 - Gate 3 - Source 35 nC 55 nC Dim. Millimeter Min. Max. A 4.7 5.3 2.2 2.54 A1 A2 2.2 2.6 b 1.0 1.4 b1 1.65 2.13 b2 2.87 3.12 C .4 .8 D 20.80 21.46 E 15.75 16.26 e 5.20 5.72 L 19.81 20.32 L1 4.50 ∅P 3.55 3.65 Q 5.89 6.40 R 4.32 5.49 S 6.15 BSC 0.31 °C/W 0.21 °C/W Safe-Operating-Area Specification Symbol Test Conditions SOA VDS = 800V, ID = 0.25A, TC = 60°C ∅P 3 55 RthJC RthCS 2 Characteristic Values Min. Typ. Max. 200 W 2 - Drain Inches Min. Max. .185 .209 .087 .102 .059 .098 .040 .055 .065 .084 .113 .123 .016 .031 .819 .845 .610 .640 0.205 0.225 .780 .800 .177 .140 .144 0.232 0.252 .170 .216 242 BSC Source-Drain Diode Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max. IS VGS = 0V 12 A ISM Repetitive, Pulse Width Limited by TJM 48 A VSD IF = IS, VGS = 0V, Note 1 1.5 V trr Note 1000 IF = IS, -di/dt = 100A/μs, VR = 100V, VGS = 0V ns 1. Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,710,405 B2 6,710,463 6,727,585 7,005,734 B2 6,759,692 7,063,975 B2 6,771,478 B2 7,071,537 7,157,338B2 IXTH12N100L Fig. 1. Output Characteristics @ T J = 25ºC Fig. 2. Extended Output Characteristics @ T J = 25ºC 12 20 VGS = 20V 12V 10V 16 14 8 9V ID - Amperes ID - Amperes 10 VGS = 20V 12V 18 6 8V 10V 12 10 9V 8 4 6 8V 2 4 7V 2 7V 6V 6V 0 0 0 2 4 6 8 10 12 14 16 0 5 10 15 25 30 Fig. 4. RDS(on) Normalized to ID = 6A Value vs. Junction Temperature Fig. 3. Output Characteristics @ T J = 125ºC 12 3.0 VGS = 20V 10V VGS = 20V 2.6 10 R DS(on) - Normalized 9V 8 ID - Amperes 20 VDS - Volts VDS - Volts 8V 6 4 7V 2 2.2 I D = 12A I D = 6A 1.8 1.4 1.0 0.6 6V 5V 0.2 0 0 5 10 15 20 25 30 -50 35 -25 0 25 50 75 100 125 150 125 150 TJ - Degrees Centigrade VDS - Volts Fig. 6. Maximum Drain Current vs. Case Temperature Fig. 5. RDS(on) Normalized to ID = 6A Value vs. Drain Current 2.6 12 VGS = 20V 2.4 TJ = 125ºC 10 2.0 ID - Amperes R DS(on) - Normalized 2.2 1.8 1.6 1.4 TJ = 25ºC 8 6 4 1.2 2 1.0 0.8 0 0 2 4 6 8 10 12 ID - Amperes © 2010 IXYS CORPORATION, All Rights Reserved 14 16 18 20 -50 -25 0 25 50 75 TC - Degrees Centigrade 100 IXTH12N100L Fig. 7. Input Admittance Fig. 8. Transconductance 16 10 TJ = - 40ºC 9 14 8 12 25ºC g f s - Siemens ID - Amperes 7 10 TJ = 125ºC 25ºC - 40ºC 8 6 6 125ºC 5 4 3 4 2 2 1 0 0 3.5 4.5 5.5 6.5 7.5 8.5 9.5 0 10.5 2 4 VGS - Volts 8 10 12 14 16 120 140 160 ID - Amperes Fig. 10. Gate Charge Fig. 9. Forward Voltage Drop of Intrinsic Diode 36 20 32 18 VDS = 500V I D = 6A 16 28 I G = 10mA 14 VGS - Volts 24 IS - Amperes 6 20 16 12 TJ = 125ºC 12 10 8 6 8 TJ = 25ºC 4 4 2 0 0 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 0 20 40 VSD - Volts 60 80 100 QG - NanoCoulombs Fig. 11. Capacitance Fig. 12. Maximum Transient Thermal Impedance 1 10,000 Ciss 1,000 Z(th)JC - ºC / W Capacitance - PicoFarads f = 1 MHz Coss 100 0.1 Crss 10 0 5 10 15 20 25 30 35 40 VDS - Volts IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 0.01 0.0001 0.001 0.01 Pulse Width - Seconds 0.1 1 IXTH12N100L Fig. 13. Forward-Bias Safe Operating Area Fig. 14. Forward-Bias Safe Operating Area @ T C = 25ºC @ T C = 60ºC 100 100 RDS(on) Limit RDS(on) Limit 25µs 25µs 100µs 10 100µs ID - Amperes ID - Amperes 10 1ms 1ms 1 1 10ms 10ms DC TJ = 150ºC TJ = 150ºC TC = 25ºC Single Pulse TC = 60ºC Single Pulse DC 0.1 0.1 10 100 1,000 VDS - Volts © 2010 IXYS CORPORATION, All Rights Reserved 10,000 10 100 1,000 10,000 VDS - Volts IXYS REF: T_12N100L(7N)4-19-10-A Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics.