IXTH12N150

IXTT12N150 IXTH12N150 High Voltage Power MOSFET VDSS ID25 RDS(on) N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode = 1500V = 12A   2.2 TO-268 (IXTT) G Symbol Test Conditions Maximum Ratings VDSS TJ = 25C to 150C 1500 V VDGR TJ = 25C to 150C, RGS = 1M 1500 V VGSS Continuous 30 V VGSM Transient 40 V ID25 TC = 25C 12 A IDM TC = 25C, Pulse Width Limited by TJM 40 A IA EAS TC = 25°C TC = 25°C 6 750 A mJ dv/dt IS  IDM, VDD  VDSS, TJ  150C 5 V/ns PD TC = 25C 890 W - 55 ... +150 150 - 55 ... +150 C C C 300 260 C C 1.13 / 10 Nm/lb.in. 4.0 6.0 g g TJ TJM Tstg TL TSOLD 1.6mm (0.062 in.) From Case for 10s Plastic Body for 10s Md Mounting Torque Weight TO-268 TO-247 S D (Tab) TO-247 (IXTH) G   BVDSS 1500 VGS = 0V, ID = 1mA VGS(th) VDS = VGS, ID = 250A 2.5 IGSS VGS = 30V, VDS = 0V IDSS VDS = VDSS, VGS = 0V RDS(on) VGS = 10V, ID = 0.5 • ID25, Note 1 V    100 nA TJ = 125C 25 A 500 A 2.2 International Standard Packages Molding Epoxies Weet UL 94 V-0 Flammability Classification Fast Intrinsic Diode Low Package Inductance  Easy to Mount Space Savings High Power Density Applications    © 2015 IXYS CORPORATION, All Rights Reserved D = Drain Tab = Drain Advantages V 4.5 D (Tab) Features  Characteristic Values Min. Typ. Max. S G = Gate S = Source  Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) D High Voltage Power Supplies Capacitor Discharge Pulse Circuits DS100425C(6/15) IXTT12N150 IXTH12N150 Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max. gfs 8 VDS = 20V, ID = 0.5 • ID25, Note 1 Ciss Coss 13 S 3720 pF 240 pF 80 pF 26 ns 16 ns 53 ns 14 ns 106 nC 17 nC 50 nC VGS = 0V, VDS = 25V, f = 1MHz Crss td(on) tr td(off) tf Resistive Switching Times VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 RG = 2 (External) Qg(on) Qgs VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 Qgd Terminals: 1 - Gate 3 - Source 2,4 - Drain 0.14 C/W RthJC RthCS TO-268 Outline TO-247 C/W 0.21 Source-Drain Diode Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max. IS VGS = 0V 12 A ISM Repetitive, Pulse Width Limited by TJM 48 A VSD IF = IS, VGS = 0V, Note 1 1.4 V trr IRM QRM IF = 6A, -di/dt = 100A/s VR = 100V, VGS = 0V 1.2 μs 24.5 A 14.8 μC TO-247 Outline 1 2 P 3 e Note 1. Pulse test, t  300μs, duty cycle, d  2%. Terminals: 1 - Gate 3 - Source Dim. Millimeter Min. Max. A 4.7 5.3 2.2 2.54 A1 A2 2.2 2.6 b 1.0 1.4 b1 1.65 2.13 b2 2.87 3.12 C .4 .8 D 20.80 21.46 E 15.75 16.26 e 5.20 5.72 L 19.81 20.32 L1 4.50 P 3.55 3.65 Q 5.89 6.40 R 4.32 5.49 S 6.15 BSC 2 - Drain Inches Min. Max. .185 .209 .087 .102 .059 .098 .040 .055 .065 .084 .113 .123 .016 .031 .819 .845 .610 .640 0.205 0.225 .780 .800 .177 .140 .144 0.232 0.252 .170 .216 242 BSC IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or moreof the following U.S. patents: 4,860,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 IXTT12N150 IXTH12N150 Fig. 1. Output Characteristics @ TJ = 25ºC Fig. 2. Output Characteristics @ TJ = 125ºC 14 8 VGS = 10V 7V 12 6 10 6V I D - Amperes I D - Amperes VGS = 10V 6V 7 8 6 5.5V 4 5 5V 4 3 2 2 1 4V 5V 0 0 0 5 10 15 20 25 0 30 5 10 15 20 25 30 VDS - Volts VDS - Volts Fig. 3. RDS(on) Normalized to ID = 6A Value vs. Junction Temperature Fig. 4. RDS(on) Normalized to ID = 6A Value vs. Drain Current 2.8 3.4 VGS = 10V 3.0 VGS = 10V 2.6 2.4 TJ = 125ºC RDS(on) - Normalized RDS(on) - Normalized 2.6 I D = 12A 2.2 I D = 6A 1.8 1.4 2.2 2.0 1.8 1.6 1.4 1.0 TJ = 25ºC 1.2 0.6 1.0 0.2 0.8 -50 -25 0 25 50 75 100 125 150 0 2 4 6 TJ - Degrees Centigrade Fig. 5. Maximum Drain Current vs. Case Temperature 10 12 14 Fig. 6. Input Admittance 14 14 12 12 10 10 I D - Amperes I D - Amperes 8 I D - Amperes 8 6 TJ = 125ºC 25ºC - 40ºC 8 6 4 4 2 2 0 0 -50 -25 0 25 50 75 TC - Degrees Centigrade © 2015 IXYS CORPORATION, All Rights Reserved 100 125 150 3.0 3.5 4.0 4.5 5.0 VGS - Volts 5.5 6.0 6.5 IXTT12N150 IXTH12N150 Fig. 8. Forward Voltage Drop of Intrinsic Diode Fig. 7. Transconductance 22 40 TJ = - 40ºC 20 35 18 30 16 25ºC I S - Amperes g f s - Siemens 14 12 125ºC 10 8 6 25 20 15 TJ = 125ºC 10 TJ = 25ºC 4 5 2 0 0 0 2 4 6 8 10 12 0.3 14 0.4 0.5 0.6 0.8 0.9 1.0 Fig. 10. Capacitance Fig. 9. Gate Charge 10,000 9 VDS = 700V 8 I D = 6A Ciss Capacitance - PicoFarads 10 I G = 10mA 7 6 VGS - Volts 0.7 VSD - Volts I D - Amperes 5 4 3 1,000 Coss 100 Crss 2 f = 1 MHz 1 10 0 0 10 20 30 40 50 60 70 80 90 100 0 110 5 10 15 20 25 30 35 40 VDS - Volts QG - NanoCoulombs Fig. 11. Forward-Bias Safe Operating Area Fig. 12. Maximum Transient Thermal Impedance 100 1 25µs RDS(on) Limit Z (th)JC - ºC / W 10 I D - Amperes 100µs 1ms 1 0.1 0.01 TJ = 150ºC TC = 25ºC Single Pulse 10ms DC 0.1 10 100 1,000 10,000 VDS - Volts 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 Pulse Width - Seconds IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS REF: T_12N150 (8M) 5-23-11 Disclaimer Notice - Information furnished is believed to be accurate and reliable. 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