IXTH12N65X2

IXTA12N65X2 IXTP12N65X2 IXTH12N65X2 X2-Class Power MOSFET VDSS ID25 RDS(on) = 650V = 12A  300m  N-Channel Enhancement Mode TO-263 (IXTA) G S Symbol Test Conditions Maximum Ratings VDSS TJ = 25C to 150C 650 V VDGR TJ = 25C to 150C, RGS = 1M 650 V VGSS Continuous 30 V VGSM Transient 40 V ID25 TC = 25C 12 A IDM TC = 25C, Pulse Width Limited by TJM 24 A IA TC = 25C 6 A EAS TC = 25C 300 mJ dv/dt IS  IDM, VDD  VDSS, TJ  150°C 15 V/ns PD TC = 25C 180 W -55 ... +150 C TJ D (Tab) TO-220 (IXTP) G D S TO-247 (IXTH) G D TJM 150 C Tstg -55 ... +150 C G = Gate S = Source 300 260 °C °C Features 10.65 / 2.2..14.6 1.13 / 10 N/lb Nm/lb.in 2.5 3.0 6.0 g g g TL TSOLD Maximum Lead Temperature for Soldering 1.6 mm (0.062in.) from Case for 10s FC Md Mounting Force (TO-263) Mounting Torque (TO-220 & TO-247) Weight TO-263 TO-220 TO-247 D (Tab)     S D (Tab) D = Drain Tab = Drain International Standard Packages Low RDS(ON) and QG Avalanche Rated Low Package Inductance Advantages Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max. BVDSS VGS = 0V, ID = 250μA 650 VGS(th) VDS = VGS, ID = 250μA 2.5 IGSS VGS = 30V, VDS = 0V IDSS VDS = VDSS, VGS = 0V RDS(on) VGS = 10V, ID = 0.5 • ID25, Note 1   V 4.5 V 100 nA TJ = 125C  5 A 50 A Applications   300 m    © 2018 IXYS CORPORATION, All Rights Reserved High Power Density Easy to Mount Space Savings Switch-Mode and Resonant-Mode Power Supplies DC-DC Converters PFC Circuits AC and DC Motor Drives Robotics and Servo Controls DS100670C(6/18) IXTA12N65X2 Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max gfs VDS = 10V, ID = 0.5 • ID25, Note 1 6.6 RGi Gate Input Resistance Ciss Coss 11.0 S 4  1100 pF 830 pF 1.5 pF 53 190 pF pF 23 ns 24 ns 52 ns 16 ns 17.7 nC 5.5 nC 5.5 nC VGS = 0V, VDS = 25V, f = 1MHz Crss IXTP12N65X2 IXTH12N65X2 Effective Output Capacitance Co(er) Co(tr) Energy related td(on) Resistive Switching Times tr td(off) tf Time related VGS = 0V VDS = 0.8 • VDSS VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 RG = 20 (External) Qg(on) Qgs VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 Qgd 0.69 C/W RthJC RthCS TO-220 TO-247 C/W C/W 0.50 0.21 Source-Drain Diode Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max IS VGS = 0V 12 A ISM Repetitive, pulse Width Limited by TJM 48 A VSD IF = IS, VGS = 0V, Note 1 1.4 V trr QRM IRM IF = 6A, -di/dt = 100A/μs 270 2.5 18.5 ns μC A 6,162,665 6,259,123B1 6,306,728B1 6,404,065B1 6,534,343 6,583,505 VR = 100V Note 1. Pulse test, t  300s, duty cycle, d 2%. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,860,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,683,344 6,710,405B2 6,710,463 6,727,585 7,005,734B2 6,759,692 7,063,975B2 6,771,478B2 7,071,537 7,157,338B2 IXTA12N65X2 IXTP12N65X2 IXTH12N65X2 o o Fig. 2. Extended Output Characteristics @ TJ = 25 C Fig. 1. Output Characteristics @ TJ = 25 C 28 12 VGS = 10V 7V VGS = 10V 8V 24 10 7V 6V 20 I D - Amperes I D - Amperes 8 6 16 6V 12 4 8 5V 2 4 5V 4V 0 0 0 0.5 1 1.5 2 2.5 3 3.5 4 0 5 10 15 VDS - Volts 12 4.0 VGS = 10V 7V 30 VGS = 10V 3.5 6V RDS(on) - Normalized 3.0 8 I D - Amperes 25 Fig. 4. RDS(on) Normalized to ID = 6A Value vs. Junction Temperature Fig. 3. Output Characteristics @ TJ = 125oC 10 20 VDS - Volts 6 5V 4 I D = 12A 2.5 2.0 I D = 6A 1.5 1.0 2 0.5 4V 0 0.0 0 4.0 1 2 3 4 5 6 7 8 9 -50 10 -25 0 25 50 75 100 125 VDS - Volts TJ - Degrees Centigrade Fig. 5. RDS(on) Normalized to ID = 6A Value vs. Drain Current Fig. 6. Normalized Breakdown & Threshold Voltages vs. Junction Temperature 1.2 150 VGS = 10V 3.5 1.1 o BV DSS / V GS(th) - Normalized R DS(on) - Normalized TJ = 125 C 3.0 2.5 2.0 o TJ = 25 C 1.5 BVDSS 1.0 0.9 VGS(th) 0.8 0.7 1.0 0.6 0.5 0 4 8 12 16 I D - Amperes © 2018 IXYS CORPORATION, All Rights Reserved 20 24 -60 -40 -20 0 20 40 60 80 TJ - Degrees Centigrade 100 120 140 160 IXTA12N65X2 Fig. 7. Maximum Drain Current vs. Case Temperature IXTP12N65X2 IXTH12N65X2 Fig. 8. Input Admittance 18 14 16 12 14 12 I D - Amperes I D - Amperes 10 8 6 o TJ = 125 C 10 o 25 C o - 40 C 8 6 4 4 2 2 0 0 -50 -25 0 25 50 75 100 125 3.0 150 3.5 4.0 4.5 TC - Degrees Centigrade 5.0 5.5 6.0 6.5 VGS - Volts Fig. 10. Forward Voltage Drop of Intrinsic Diode Fig. 9. Transconductance 20 40 o TJ = - 40 C 18 35 16 25 C I S - Amperes g f s - Siemens 30 o 14 12 o 125 C 10 8 25 20 o TJ = 125 C 15 6 o TJ = 25 C 10 4 5 2 0 0 0 2 4 6 8 10 12 14 16 18 0.4 20 0.5 0.6 0.7 0.8 0.9 1.0 1.1 VSD - Volts I D - Amperes Fig. 12. Capacitance Fig. 11. Gate Charge 10000 10 VDS = 325V I D = 6A Ciss Capacitance - PicoFarads V GS - Volts 8 I G = 10mA 6 4 1000 100 Coss 10 2 f = 1 MHz C rss 1 0 0 2 4 6 8 10 12 14 16 18 QG - NanoCoulombs IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 1 10 100 VDS - Volts 1000 IXTA12N65X2 Fig. 13. Output Capacitance Stored Energy IXTP12N65X2 IXTH12N65X2 Fig. 14. Forward-Bias Safe Operating Area 100 11 RDS(on) Limit 10 9 25μs 10 100μs 7 I D - Amperes E OSS - MicroJoules 8 6 5 4 1 1ms 3 0.1 o TJ = 150 C 10ms o 2 TC = 25 C Single Pulse 1 0.01 0 0 100 200 300 VDS - Volts 400 500 10 600 100 1,000 VDS - Volts Fig. 15. Maximum Transient Thermal Impedance 1 Z (th)JC - K / W 0.1 0.01 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 Pulse Width - Seconds © 2018 IXYS CORPORATION, All Rights Reserved IXYS REF: T_12N65X2 (X3-S602) 1-06-16 IXTA12N65X2 TO-263 Outline 1 - Gate 2,4 - Drain 3 - Source TO-220 Outline 1 - Gate 2,4 - Drain 3 - Source TO-247 Outline 1 - Gate 2,4 - Drain 3 - Source IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXTP12N65X2 IXTH12N65X2 Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics.