IXTH12N70X2

Preliminary Technical Information IXTA12N70X2 IXTP12N70X2 IXTH12N70X2 X2-Class Power MOSFET VDSS ID25 RDS(on) = 700V = 12A  300m  N-Channel Enhancement Mode TO-263 (IXTA) G S D (Tab) Symbol Test Conditions VDSS TJ = 25C to 150C Maximum Ratings 700 V VDGR TJ = 25C to 150C, RGS = 1M 700 V VGSS Continuous 30 V VGSM Transient 40 V ID25 TC = 25C 12 A IDM TC = 25C, Pulse Width Limited by TJM 24 A TO-220 (IXTP) IA TC = 25C 6 A EAS TC = 25C 300 mJ dv/dt IS  IDM, VDD  VDSS, TJ  150°C 50 V/ns PD TC = 25C 180 W -55 ... +150 C TJ TJM 150 C Tstg -55 ... +150 C 300 260 °C °C 10..65 / 2.2..14.6 1.13 / 10 N/lb Nm/lb.in 2.5 3.0 6.0 g g g TL TSOLD Maximum Lead Temperature for Soldering 1.6 mm (0.062in.) from Case for 10s FC Md Mounting Force (TO-263) Mounting Torque (TO-220 & TO-247) Weight TO-263 TO-220 TO-247 G D S D (Tab) TO-247 (IXTH) G D S G = Gate S = Source D (Tab) D = Drain Tab = Drain Features     International Standard Packages Low RDS(ON) and QG Avalanche Rated Low Package Inductance Advantages Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max. BVDSS VGS = 0V, ID = 250μA 700 VGS(th) VDS = VGS, ID = 250μA 2.5 IGSS VGS = 30V, VDS = 0V IDSS VDS = VDSS, VGS = 0V RDS(on) VGS = 10V, ID = 0.5 • ID25, Note 1   V 4.5 V 100 nA TJ = 125C  5 A 75 A Applications   300 m    © 2018 IXYS CORPORATION, All Rights Reserved High Power Density Easy to Mount Space Savings Switch-Mode and Resonant-Mode Power Supplies DC-DC Converters PFC Circuits AC and DC Motor Drives Robotics and Servo Controls DS100780A(06/18) IXTA12N70X2 Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max gfs VDS = 10V, ID = 0.5 • ID25, Note 1 7 RGi 12 S Gate Input Resistance 3.7  960 pF VGS = 0V, VDS = 25V, f = 1MHz 920 pF 2 pF 58 200 pF pF 24 ns 30 ns 78 ns 27 ns 19 nC 5 nC 8 nC Ciss Coss Crss IXTP12N70X2 IXTH12N70X2 Effective Output Capacitance Co(er) Co(tr) Energy related td(on) Resistive Switching Times tr td(off) tf Time related VGS = 0V VDS = 0.8 • VDSS VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 RG = 30 (External) Qg(on) Qgs VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 Qgd 0.69 C/W RthJC RthCS TO-220 TO-247 C/W C/W 0.50 0.25 Source-Drain Diode Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max IS VGS = 0V 12 A ISM Repetitive, pulse Width Limited by TJM 48 A VSD IF = IS, VGS = 0V, Note 1 1.4 V trr QRM IRM IF = 6A, -di/dt = 100A/μs 270 2.8 21 VR = 100V ns μC A Note 1. Pulse test, t  300s, duty cycle, d 2%. PRELIMINARY TECHNICAL INFORMATION The product presented herein is under development. The Technical Specifications offered are derived from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a "considered reflection" of the anticipated result. IXYS reserves the right to change limits, test conditions, and dimensions without notice. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,860,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123B1 6,306,728B1 6,404,065B1 6,534,343 6,583,505 6,683,344 6,710,405B2 6,710,463 6,727,585 7,005,734B2 6,759,692 7,063,975B2 6,771,478B2 7,071,537 7,157,338B2 IXTA12N70X2 IXTP12N70X2 IXTH12N70X2 Fig. 2. Extended Output Characteristics @ TJ = 25ºC Fig. 1. Output Characteristics @ TJ = 25ºC 32 12 VGS = 10V 8V 10 VGS = 10V 8V 28 7V 24 7V 6V I D - Amperes I D - Amperes 8 6 4 20 16 12 6V 8 2 4 5V 0 5V 0 0 0.5 1 1.5 2 2.5 3 3.5 4 0 5 10 VDS - Volts 20 25 Fig. 4. RDS(on) Normalized to ID = 6A Value vs. Junction Temperature Fig. 3. Output Characteristics @ TJ = 125ºC 4.0 12 VGS = 10V 7V VGS = 10V 3.5 10 6V RDS(on) - Normalized 3.0 8 I D - Amperes 15 VDS - Volts 6 5V 4 I D = 12A 2.5 2.0 I D = 6A 1.5 1.0 2 0.5 4V 0 0.0 0 5.0 1 2 3 4 5 6 7 8 9 -25 0 25 50 75 100 125 VDS - Volts TJ - Degrees Centigrade Fig. 5. RDS(on) Normalized to ID = 6A Value vs. Drain Current Fig. 6. Normalized Breakdown & Threshold Voltages vs. Junction Temperature 1.3 150 VGS = 10V 4.5 BV DSS / V GS(th) - Normalized 1.2 4.0 R DS(on) - Normalized -50 10 TJ = 125ºC 3.5 3.0 2.5 2.0 TJ = 25ºC 1.5 BVDSS 1.1 1.0 0.9 0.8 VGS(th) 0.7 1.0 0.6 0.5 0 5 10 15 20 I D - Amperes © 2018 IXYS CORPORATION, All Rights Reserved 25 30 -60 -40 -20 0 20 40 60 80 TJ - Degrees Centigrade 100 120 140 160 IXTA12N70X2 Fig. 7. Maximum Drain Current vs. Case Temperature IXTP12N70X2 IXTH12N70X2 Fig. 8. Input Admittance 20 14 18 12 16 14 I D - Amperes I D - Amperes 10 8 6 TJ = 125ºC 25ºC - 40ºC 12 10 8 6 4 4 2 2 0 0 -50 -25 0 25 50 75 100 125 3.0 150 3.5 4.0 4.5 TC - Degrees Centigrade 5.0 5.5 6.0 6.5 7.0 VGS - Volts Fig. 10. Forward Voltage Drop of Intrinsic Diode Fig. 9. Transconductance 24 60 TJ = - 40ºC 50 16 40 25ºC I S - Amperes g f s - Siemens 20 12 125ºC 8 30 TJ = 125ºC 20 TJ = 25ºC 10 4 0 0 0 2 4 6 8 10 12 14 16 18 0.4 20 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 VSD - Volts I D - Amperes Fig. 12. Capacitance Fig. 11. Gate Charge 10000 10 VDS = 350V I D = 6A 1000 Capacitance - PicoFarads V GS - Volts 8 I G = 10mA 6 4 2 Ciss 100 C oss 10 1 f = 1 MHz 0 Crss 0.1 0 2 4 6 8 10 12 14 16 18 20 QG - NanoCoulombs IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 1 10 100 VDS - Volts 1000 IXTA12N70X2 Fig. 13. Output Capacitance Stored Energy Fig. 14. Forward-Bias Safe Operating Area 16 100 RDS(on) Limit 14 25μs 12 10 100μs 10 I D - Amperes EOSS - MicroJoules IXTP12N70X2 IXTH12N70X2 8 6 4 1 1ms 0.1 TJ = 150ºC 10ms TC = 25ºC Single Pulse 2 0 DC 0.01 0 100 200 300 400 500 600 10 700 100 1,000 VDS - Volts VDS - Volts Fig. 15. Maximum Transient Thermal Impedance 1 Z (th)JC - K / W 0.1 0.01 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 Pulse Width - Seconds © 2018 IXYS CORPORATION, All Rights Reserved IXYS REF: T_12N70X2 (X3-S602) 1-19-17 IXTA12N70X2 TO-263 Outline 1 - Gate 2,4 - Drain 3 - Source TO-220 Outline 1 - Gate 2,4 - Drain 3 - Source TO-247 Outline 1 - Gate 2,4 - Drain 3 - Source IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXTP12N70X2 IXTH12N70X2 Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics.