IXTH130N15X4

IXTP130N15X4 IXTH130N15X4 X4-Class Power MOSFETTM VDSS ID25 RDS(on) = 150V = 130A  8.5m  D N-Channel Enhancement Mode Avalanche Rated G TO-220 (IXTP) S Symbol Test Conditions VDSS TJ = 25C to 150C 150 V VDGR TJ = 25C to 150C, RGS = 1M 150 V VGSS Continuous 20 V VGSM Transient 30 V ID25 TC = 25C 130 A IDM TC = 25C, Pulse Width Limited by TJM 240 A IA TC = 25C 65 A EAS TC = 25C 800 mJ dv/dt IS  IDM, VDD  VDSS, TJ  150°C 50 V/ns PD TC = 25C 400 W -55 ... +150 C G D S Maximum Ratings TJ TJM 150 C Tstg -55 ... +150 C 300 260 °C °C 1.13 / 10 Nm/lb.in 3 6 g g TL TSOLD Maximum Lead Temperature for Soldering 1.6 mm (0.062in.) from Case for 10s Md Mounting Torque Weight TO-220 TO-247 TO-247 (IXTH) G BVDSS VGS = 0V, ID = 250μA 150     VGS(th) VDS = VGS, ID = 250μA 2.5 IGSS VGS = 20V, VDS = 0V IDSS VDS = VDSS, VGS = 0V RDS(on) 4.5 V   TJ = 125C VGS = 10V, ID = 0.5 • ID25, Note 1 © 2019 IXYS CORPORATION, All Rights Reserved 7.0 A A 8.5 m D = Drain Tab = Drain International Standard Packages Low RDS(ON) and QG Avalanche Rated Low Package Inductance High Power Density Easy to Mount Space Savings Applications 100 nA 5 200 D (Tab) Advantages  V S Features  Characteristic Values Min. Typ. Max. D G = Gate S = Source  Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) D (Tab)    Switch-Mode and Resonant-Mode Power Supplies DC-DC Converters PFC Circuits AC and DC Motor Drives Robotics and Servo Controls DS100893B(11/19) IXTP130N15X4 IXTH130N15X4 Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max gfs VDS = 10V, ID = 60A, Note 1 70 RGi Gate Input Resistance Ciss Coss 120 S 3.4  4770 pF 710 pF 3.5 pF 560 1850 pF pF 20 ns VGS = 0V, VDS = 25V, f = 1MHz Crss Effective Output Capacitance Co(er) Co(tr) Energy related td(on) Resistive Switching Times tr VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 td(off) tf Time related VGS = 0V VDS = 0.8 • VDSS RG = 5 (External) Qg(on) Qgs VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 Qgd 27 ns 100 ns 10 ns 87 nC 24 nC 23 nC 0.31 C/W RthJC RthCS TO-220 TO-247 0.50 0.21 C/W C/W Source-Drain Diode Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max IS VGS = 0V 130 A ISM Repetitive, pulse Width Limited by TJM 520 A VSD IF = 100A, VGS = 0V, Note 1 1.4 V trr QRM IRM IF = 65A, -di/dt = 100A/μs 93 310 6.7 ns nC A 6,162,665 6,259,123B1 6,306,728B1 6,404,065B1 6,534,343 6,583,505 VR = 75V Note 1. Pulse test, t  300s, duty cycle, d 2%. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,860,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,683,344 6,710,405B2 6,710,463 6,727,585 7,005,734B2 6,759,692 7,063,975B2 6,771,478B2 7,071,537 7,157,338B2 IXTP130N15X4 IXTH130N15X4 o o Fig. 2. Extended Output Characteristics @ TJ = 25 C Fig. 1. Output Characteristics @ TJ = 25 C 400 VGS = 10V 9V 8V 120 8V 100 7V 300 80 I D - Amperes I D - Amperes VGS = 10V 9V 350 6V 60 250 7V 200 150 6V 40 100 5V 20 50 0 5V 0 0 0.2 0.4 0.6 0.8 1 1.2 0 5 10 VDS - Volts 25 Fig. 4. RDS(on) Normalized to ID = 65A Value vs. Junction Temperature o 2.6 VGS = 10V 8V 7V VGS = 10V 2.2 RDS(on) - Normalized 100 I D - Amperes 20 VDS - Volts Fig. 3. Output Characteristics @ TJ = 125 C 120 15 6V 80 60 5V 40 I D = 130A 1.8 I D = 65A 1.4 1.0 20 4V 0 0 4.0 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 0.6 2 -50 2.2 -25 0 25 50 75 100 125 VDS - Volts TJ - Degrees Centigrade Fig. 5. RDS(on) Normalized to ID = 65A Value vs. Drain Current Fig. 6. Normalized Breakdown & Threshold Voltages vs. Junction Temperature 1.3 VGS = 10V 150 1.2 BVDSS / VGS(th) - Normalized 3.5 RDS(on) - Normalized 0.2 3.0 o TJ = 125 C 2.5 2.0 o TJ = 25 C 1.5 BVDSS 1.1 1.0 0.9 0.8 VGS(th) 0.7 1.0 0.6 0.5 0 50 100 150 200 250 I D - Amperes © 2019 IXYS CORPORATION, All Rights Reserved 300 350 400 -60 -40 -20 0 20 40 60 80 TJ - Degrees Centigrade 100 120 140 160 IXTP130N15X4 IXTH130N15X4 Fig. 7. Maximum Drain Current vs. Case Temperature Fig. 8. Input Admittance 140 160 120 140 120 I D - Amperes 100 I D - Amperes VDS = 10V 80 60 40 100 o TJ = 125 C 80 o 25 C o - 40 C 60 40 20 20 0 0 -50 -25 0 25 50 75 100 125 3.5 150 4.0 4.5 5.0 TC - Degrees Centigrade 5.5 6.0 6.5 VGS - Volts Fig. 10. Forward Voltage Drop of Intrinsic Diode Fig. 9. Transconductance 400 240 o TJ = - 40 C VDS = 10V 200 350 o 25 C I S - Amperes g f s - Siemens 300 160 120 o 125 C 80 250 200 150 o TJ = 125 C 100 o TJ = 25 C 40 50 0 0 0 20 40 60 80 100 120 140 160 180 0.4 0.5 0.6 0.7 0.8 1.0 1.1 1.2 1.3 1.4 1.5 1.6 Fig. 12. Capacitance Fig. 11. Gate Charge 10 9 VDS = 75V 8 I D = 65A Capacitance - PicoFarads 100,000 I G = 10mA 7 VGS - Volts 0.9 VSD - Volts I D - Amperes 6 5 4 3 2 10,000 C iss 1,000 C oss 100 C rss 10 1 f = 1 MHz 0 1 0 10 20 30 40 50 60 70 80 90 QG - NanoCoulombs IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 1 10 100 VDS - Volts 1,000 IXTP130N15X4 IXTH130N15X4 Fig. 13. Output Capacitance Stored Energy Fig. 14. Forward-Bias Safe Operating Area 1000 7 RDS(on) Limit 25μs 100 5 I D - Amperes EOSS - MicroJoules 6 4 3 2 100μs 10 1ms o 1 TJ = 150 C 10ms o TC = 25 C Single Pulse 1 0 DC 0.1 0 20 40 60 80 100 120 140 160 1 10 100 1,000 VDS - Volts VDS - Volts Fig. 15. Maximum Transient Thermal Impedance 1 Z(th)JC - K / W 0.1 0.01 0.001 0.00001 0.0001 0.001 0.01 0.1 1 Pulse Width - Second © 2019 IXYS CORPORATION, All Rights Reserved IXYS REF: T_130N15X4 (16-S201) 4-19-18 IXTP130N15X4 IXTH130N15X4 TO-220 Outline 1 - Gate 2,4 - Drain 3 - Source TO-247 Outline 1 - Gate 2,4 - Drain 3 - Source IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXTP130N15X4 IXTH130N15X4 Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. 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