IXTH130N20T

IXTQ130N20T IXTH130N20T TrenchTM Power MOSFET VDSS ID25 = 200V = 130A   16m RDS(on) N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier TO-3P (IXTQ) G D Symbol Test Conditions Maximum Ratings VDSS TJ = 25C to 175C 200 V VDGR TJ = 25C to 175C, RGS = 1M 200 V VGSS VGSM Continuous Transient  20  30 V V ID25 ILRMS TC = 25C Lead Current Limit, RMS 130 75 A A IDM TC = 25C, Pulse Width Limited by TJM 320 A IA TC = 25C 4 A EAS TC = 25C 1 J dv/dt IS  IDM, VDD  VDSS, TJ  175°C 10 V/ns PD TC = 25C 830 W G  TJM 175  C  Tstg -55 ... +175  C Md Mounting Torque Weight TO-3P TO-247 Symbol Test Conditions (TJ = 25C Unless Otherwise Specified) 300 260 °C °C 1.13 / 10 Nm/lb.in 5.5 6.0 g g VGS = 0V, ID = 250μA 200 VGS(th) VDS = VGS, ID = 1mA 2.5 IGSS VGS = 20V, VDS = 0V IDSS VDS = VDSS, VGS = 0V RDS(on) VGS = 10V, ID = 0.5 • ID25, Note 1   © 2014 IXYS CORPORATION, All Rights Reserved High Current Handling Capability Avalanche Rated Fast Intrinsic rectifier Low RDS(on) Advantages     V 5.0 V           200 nA    TJ = 150C D = Drain Tab = Drain Easy to Mount Space Savings High Power Density Applications Characteristic Values Min. Typ. Max. BVDSS Tab S Features C Maximum Lead Temperature for Soldering 1.6 mm (0.062in.) from Case for 10s D G = Gate S = Source  TL TSOLD Tab TO-247 ( IXTH) -55 ... +175 TJ S 25 A 500 μA    DC-DC Converters Battery Chargers Switch-Mode and Resonant-Mode Power Supplies DC Choppers AC Motor Drives Uninterruptible Power Supplies High Speed Power Switching Applications 16 m DS99846(10/14) IXTQ130N20T IXTH130N20T Symbol Test Conditions (TJ = 25C Unless Otherwise Specified) Characteristic Values Min. Typ. Max. gfs 70 VDS = 10V, ID = 60A, Note 1 Ciss Coss 120 S 8800 pF 970 pF 122 pF 25 ns 18 ns 57 ns 22 ns 150 nC 44 nC 42 nC 0.25 0.18 C/W C/W VGS = 0V, VDS = 25V, f = 1MHz Crss td(on) tr td(off) tf Resistive Switching Times VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 RG = 2 (External) Qg(on) Qgs VGS = 10V, VDS = 0.5 • VDSS, ID = 25A Qgd RthJC RthCS TO-3P Outline 1 - GATE 2,4 - DRAIN 3 - SOURCE Source-Drain Diode Symbol Test Conditions (TJ = 25C Unless Otherwise Specified) Characteristic Values Min. Typ. Max. IS VGS = 0V 130 A ISM Repetitive, Pulse Width Limited by TJM 520 A VSD IF = 50A, VGS = 0V, Note 1 1.0 V trr IF = 65A, -di/dt = 100A/s 150 TO-247 Outline ns VR = 100V, VGS = 0V Note 1 1. Pulse test, t  300s, duty cycle, d  2%. 2 P 3 e Terminals: 1 - Gate 3 - Source Dim. Millimeter Min. Max. A 4.7 5.3 A1 2.2 2.54 A2 2.2 2.6 b 1.0 1.4 1.65 2.13 b1 b2 2.87 3.12 C .4 .8 D 20.80 21.46 E 15.75 16.26 e 5.20 5.72 L 19.81 20.32 L1 4.50 P 3.55 3.65 Q 5.89 6.40 R 4.32 5.49 S 6.15 BSC 2 - Drain Inches Min. Max. .185 .209 .087 .102 .059 .098 .040 .055 .065 .084 .113 .123 .016 .031 .819 .845 .610 .640 0.205 0.225 .780 .800 .177 .140 .144 0.232 0.252 .170 .216 242 BSC IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,860,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 IXTQ130N20T IXTH130N20T Fig. 2. Extended Output Characteristics @ TJ = 25ºC Fig. 1. Output Characteristics @ TJ = 25ºC 280 VGS = 10V 8V 7V 120 VGS = 10V 8V 240 100 I D - Amperes I D - Amperes 200 80 6V 60 40 7V 160 120 6V 80 20 40 5V 5V 0 0 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 0 2.2 5 10 VDS - Volts 15 20 VDS - Volts Fig. 4. RDS(on) Normalized to ID = 65A Value vs. Junction Temperature Fig. 3. Output Characteristics @ TJ = 150ºC 3.5 VGS = 10V 8V 7V 120 VGS = 10V 3.0 RDS(on) - Normalized I D - Amperes 100 6V 80 60 40 5V 2.5 I D = 130A 2.0 I D = 65A 1.5 1.0 20 0 0.5 0 1 2 3 4 5 6 -50 -25 0 Fig. 5. RDS(on) Normalized to ID = 65A Value vs. Drain Current VGS = 10V 50 75 100 125 150 175 150 175 Fig. 6. Drain Current vs. Case Temperature 90 4.0 3.5 25 TJ - Degrees Centigrade VDS - Volts External Lead Current Limit 80 TJ = 175ºC 60 I D - Amperes R DS(on) - Normalized 70 3.0 2.5 2.0 50 40 30 1.5 20 1.0 TJ = 25ºC 10 0 0.5 0 40 80 120 160 I D - Amperes © 2014 IXYS CORPORATION, All Rights Reserved 200 240 280 -50 -25 0 25 50 75 TC - Degrees Centigrade 100 125 IXTQ130N20T IXTH130N20T Fig. 7. Input Admittance Fig. 8. Transconductance 160 180 140 160 140 g f s - Siemens 120 I D - Amperes TJ = - 40ºC TJ = 150ºC 25ºC - 40ºC 100 80 60 25ºC 120 100 80 150ºC 60 40 40 20 20 0 0 3.4 3.8 4.2 4.6 5.0 5.4 5.8 6.2 0 6.6 20 40 60 VGS - Volts Fig. 9. Forward Voltage Drop of Intrinsic Diode 100 120 140 160 180 Fig. 10. Gate Charge 10 300 VDS = 100V 9 250 I D = 25A 8 I G = 10mA 7 200 VGS - Volts I S - Amperes 80 I D - Amperes 150 TJ = 150ºC 100 6 5 4 3 TJ = 25ºC 2 50 1 0 0 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 0 15 30 45 60 75 90 105 120 135 150 QG - NanoCoulombs VSD - Volts Fig. 11. Capacitance Fig. 12. Maximum Transient Thermal Impedance 10,000 1.E+00 Capacitance - PicoFarads Z (th)JC - ºC / W Ciss f = 1 MHz 1,000 Coss 1.E-01 1.E-02 Crss 100 0 5 10 15 20 25 30 35 40 VDS - Volts IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 1.E-03 1.E-06 1.E-05 1.E-04 1.E-03 1.E-02 Pulse Width - Seconds 1.E-01 1.E+00 1.E+01 IXTQ130N20T IXTH130N20T Fig. 13. Resistive Turn-on Rise Time vs. Junction Temperature Fig. 14. Resistive Turn-on Rise Time vs. Drain Current 20 20 19 VDS = 100V 18 17 16 15 14 I D = 130A 13 TJ = 25ºC 18 t r - Nanoseconds t r - Nanoseconds 19 RG = 2Ω VGS = 15V I D = 65A 17 16 15 VDS = 100V 13 12 12 11 11 10 RG = 2Ω VGS = 15V 14 TJ = 125ºC 10 25 35 45 55 65 75 85 95 105 115 125 30 40 50 60 70 TJ - Degrees Centigrade Fig. 15. Resistive Turn-on Switching Times vs. Gate Resistance 30 29 TJ = 125ºC, VGS = 15V t r - Nanoseconds I D = 130A, 65A 27 25 26 20 25 15 24 10 5 6 7 8 9 td(off) - - - - 21 19 65 I D = 65A 17 15 13 10 25 35 45 55 75 85 95 105 115 50 125 VDS = 100V 80 80 70 TJ = 25ºC 22 75 20 70 16 180 TJ = 125ºC, VGS = 15V VDS = 100V 160 60 140 I D = 65A, 130A 120 40 100 30 80 55 20 60 50 130 10 60 14 td(off) - - - - 50 65 TJ = 125ºC 200 tf t d ( o f f ) - Nanoseconds 85 t f - Nanoseconds RG = 2Ω, VGS = 15V 90 t d ( o f f ) - Nanoseconds t f - Nanoseconds 65 Fig. 18. Resistive Turn-off Switching Times vs. Gate Resistance 90 td(off) - - - - 18 55 TJ - Degrees Centigrade 28 24 60 I D = 130A Fig. 17. Resistive Turn-off Switching Times vs. Drain Current 26 70 I D = 130A RG - Ohms tf 75 VDS = 100V 23 4 130 t d ( o f f ) - Nanoseconds 28 3 120 RG = 2Ω, VGS = 15V 23 t d ( o n ) - Nanoseconds 35 2 110 80 tf VDS = 100V 30 100 25 td(on) - - - - t f - Nanoseconds 40 90 Fig. 16. Resistive Turn-off Switching Times vs. Junction Temperature 45 tr 80 I D - Amperes TJ = 25ºC 12 30 40 50 60 70 80 90 100 I D - Amperes © 2014 IXYS CORPORATION, All Rights Reserved 110 120 40 2 3 4 5 6 7 8 9 10 RG - Ohms IXYS REF: T_130N20T(8W) 10-07-14 Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics.