IXTH13N110

IXTH 13N110 VDSS MegaMOSTMFET ID25 RDS(on) = 1100 V = 13 A = 0.92 Ω N-Channel Enhancement Mode Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 1100 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 1100 V VGS Continuous ±20 V VGSM Transient ±30 V ID25 TC = 25°C 13 A IDM TC = 25°C, pulse width limited by TJM 52 A PD TC = 25°C 360 W -55 ... +150 °C 150 °C -55 ... +150 °C TJM T stg Md Mounting torque Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s Symbol Test Conditions VDSS VGS = 0 V, ID = 3 mA VGS(th) VDS = VGS, ID = 250 µA IGSS VGS = ±20 VDC, VDS = 0 IDSS VDS = 0.8 • VDSS VGS = 0 V R DS(on) 6 g 300 °C G = Gate, S = Source, D = Drain, TAB = Drain Features l l l l Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 1100 V 2 TJ = 25°C TJ = 125°C VGS = 10 V, ID = 0.5 • ID25 Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 % IXYS reserves the right to change limits, test conditions, and dimensions. © 2000 IXYS All rights reserved D (TAB) 1.13/10 Nm/lb.in. OB SO Weight LE TJ TO-247 AD TE Symbol 0.80 4.5 V ±100 nA 500 3 µA mA 0.92 Ω International standard package JEDEC TO-247 AD Low RDS (on) HDMOSTM process Rugged polysilicon gate cell structure Fast switching times Applications l l l l Switch-mode and resonant-mode power supplies Motor controls Uninterruptible Power Supplies (UPS) DC choppers Advantages l l l Easy to mount with 1 screw (isolated mounting screw hole) Space savings High power density 92781F (3/98) 1-2 IXTH 13N110 Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. gfs VDS = 10 V; ID = 6.5 A, pulse test C iss C oss VGS = 0 V, VDS = 25 V, f = 1 MHz C rss t d(on) 10 S 5650 pF 400 pF 150 pF 24 ns tr VGS = 10 V, VDS = 0.5 • VDSS, ID = 0.5 ID25 21 ns td(off) RG = 1 Ω, (External) 80 ns 36 ns 195 nC 28 nC 85 nC tf Q g(on) Q gs VGS = 10 V, VDS = 0.5 • VDSS, ID = 0.5 ID25 Q gd R thJC R thCK 0.25 Symbol Test Conditions IS VGS = 0 V ISM Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. A Repetitive; pulse width limited by TJM 52 A VSD IF = IS, VGS = 0 V, Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 % 1.5 V t rr IF = IS, -di/dt = 100 A/µs, VR = 100 V OB SO 13 © 2000 IXYS All rights reserved 850 2 Terminals: 1 - Gate 3 - Source K/W K/W LE Source-Drain Diode 1 TE 0.35 TO-247 AD Outline 3 2 - Drain Tab - Drain Dim. Millimeter Inches Min. Max. Min. Max. A 4.7 5.3 .185 .209 A1 2.2 2.54 .087 .102 A2 2.2 2.6 .059 .098 b 1.0 1.4 .040 .055 b1 1.65 2.13 .065 .084 b2 2.87 3.12 .113 .123 C .4 .8 .016 .031 D 20.80 21.46 .819 .845 E 15.75 16.26 .610 .640 e 5.20 5.72 0.205 0.225 L 19.81 20.32 .780 .800 L1 4.50 .177 ∅ P 3.55 3.65 .140 .144 Q 5.89 6.40 0.232 0.252 R 4.32 5.49 .170 .216 S 6.15 BSC 242 BSC ns IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 2-2 Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics.