IXTH13N80

VDSS IXTH / IXTM 11N80 800 V IXTH / IXTM 13N80 800 V MegaMOSTMFET I D25 RDS(on) 11 A 0.95 Ω 13 A 0.80 Ω N-Channel Enhancement Mode Obsolete: IXTM11N80 IXTM13N80 Symbol Test Conditions Maximum Ratings V DSS TJ = 25°C to 150°C 800 V V DGR TJ = 25°C to 150°C; RGS = 1 MΩ 800 V V GS Continuous ±20 V V GSM Transient ±30 V I D25 TC = 25°C I DM TC = 25°C, pulse width limited by TJM 11 13 44 52 A A A A PD TC = 25°C 300 W -55 ... +150 °C T JM 150 °C Tstg -55 ... +150 °C TJ Md 11N80 13N80 11N80 13N80 Mounting torque TO-247 AD (IXTH) D (TAB) TO-204 AA (IXTM) Package unavailable G G = Gate, S = Source, 1.13/10 Nm/lb.in. Weight TO-204 = 18 g, TO-247 = 6 g Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s °C 300 Features ● ● ● ● ● Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. VGS = 0 V, ID = 3 mA V GS(th) VDS = VGS, ID = 250 µA I GSS VGS = ±20 VDC, VDS = 0 I DSS VDS = 0.8 • VDSS VGS = 0 V R DS(on) VGS = 10 V, ID = 0.5 ID25 Pulse test, t ≤ 300 µs, 800 2 TJ = 25°C TJ = 125°C 11N80 13N80 IXYS reserves the right to change limits, test conditions, and dimensions. IXYS Corporation 3540 Bassett Street, Santa Clara,CA 95054 Tel: 408-982-0700 Fax: 408-496-0670 V 4.5 V ±100 nA 250 1 µA mA 0.95 0.80 Ω Ω International standard packages Low RDS (on) HDMOSTM process Rugged polysilicon gate cell structure Low package inductance (< 5 nH) - easy to drive and to protect Fast switching times Applications ● ● V DSS D = Drain, TAB = Drain ● ● Switch-mode and resonant-mode power supplies Motor controls Uninterruptible Power Supplies (UPS) DC choppers Advantages ● ● ● Easy to mount with 1 screw (TO-247) (isolated mounting screw hole) Space savings High power density 915380F (5/96) IXYS Semiconductor Edisonstr. 15, D-68623 Lampertheim, Germany Tel: +49-6206-5030 Fax: +49-6206-503629 IXTH 11N80 IXTH 13N80 IXTM 11N80 IXTM 13N80 Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. gfs V DS = 10 V; ID = 0.5 • ID25, pulse test 14 S 4500 pF 310 pF Crss 65 pF td(on) 20 Ciss Coss VGS = 0 V, VDS = 25 V, f = 1 MHz 8 50 VGS = 10 V, VDS = 0.5 • VDSS, ID = 0.5 ID25 33 50 ns td(off) RG = 2 Ω, (External) 63 100 ns 32 50 ns 145 170 nC 30 45 nC 55 80 nC Qg(on) Qgs VGS = 10 V, VDS = 0.5 • VDSS, ID = 0.5 ID25 Qgd RthJC 0.42 RthCK 0.25 Source-Drain Diode K/W K/W Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. Symbol Test Conditions IS VGS = 0 V 11N80 13N80 11 13 A A I SM Repetitive; pulse width limited by TJM 11N80 13N80 44 52 A A VSD IF = IS, VGS = 0 V, Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 % 1.5 V trr IF = IS, -di/dt = 100 A/µs, VR = 100 V 800 1 2 3 ns tr tf TO-247 AD (IXTH) Outline Terminals: 1 - Gate 3 - Source 2 - Drain Tab - Drain Dim. Millimeter Min. Max. A 4.7 5.3 A1 2.2 2.54 A2 2.2 2.6 b 1.0 1.4 1.65 2.13 b1 b2 2.87 3.12 C .4 .8 D 20.80 21.46 E 15.75 16.26 e 5.20 5.72 L 19.81 20.32 L1 4.50 ∅P 3.55 3.65 Q 5.89 6.40 R 4.32 5.49 S 6.15 BSC TO-204AA (IXTM) Outline ns Pins 1 - Gate 2 - Source Case - Drain Dim. IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 Inches Min. Max. .185 .209 .087 .102 .059 .098 .040 .055 .065 .084 .113 .123 .016 .031 .819 .845 .610 .640 0.205 0.225 .780 .800 .177 .140 .144 0.232 0.252 .170 .216 242 BSC Millimeter Min. Max. A 6.4 11.4 A1 3.42 ∅b .97 1.09 ∅D 22.22 e 10.67 11.17 e1 5.21 5.71 Inches Min. Max. .250 .450 .135 .038 .043 .875 .420 .440 .205 .225 L 7.93 ∅p 3.84 4.19 ∅p1 3.84 4.19 q 30.15 BSC R 13.33 R1 4.77 s 16.64 17.14 .312 .151 .165 .151 .165 1.187 BSC .525 .188 .655 .675 IXTH 11N80 IXTM 11N80 Fig. 2 Input Admittance 18 18 16 16 14 14 12 12 ID - Amperes ID - Amperes Fig. 1 Output Characteristics 10 8 6 TJ = 25°C VDS = 10V 10 8 6 4 4 2 2 0 0 0 2 4 6 8 10 12 0 1 2 3 VDS - Volts 1.40 6 7 8 9 10 2.50 2.25 RDS(on) - Normalized 1.30 RDS(on) - Ohms 5 Fig. 4 Temperature Dependence of Drain to Source Resistance TJ = 25°C 1.35 4 VGS - Volts Fig. 3 RDS(on) vs. Drain Current 1.25 1.20 VGS = 10V 1.15 1.10 1.05 1.00 2.00 1.75 1.50 1.25 1.00 0.75 0.95 0.90 0 2 4 6 0.50 -50 8 10 12 14 16 18 20 22 24 26 -25 0 Fig. 5 Drain Current vs. Case Temperature 50 75 100 125 150 Fig. 6 Temperature Dependence of Breakdown and Threshold Voltage 18 1.2 16 1.1 BV/VG(th) - Normalized V GS(th) 14 12 10 8 6 4 1.0 0.9 0.8 0.7 0.6 2 0 -50 25 TJ - Degrees C ID - Amperes ID - Amperes IXTH 13N80 IXTM 13N80 -25 0 25 50 75 100 125 150 TC - Degrees C 0.5 -50 -25 0 25 50 75 100 125 150 TJ - Degrees C IXYS reserves the right to change limits, test conditions, and dimensions. IXYS Corporation 3540 Bassett Street, Santa Clara,CA 95054 Tel: 408-982-0700 Fax: 408-496-0670 IXYS Semiconductor Edisonstr. 15, D-68623 Lampertheim, Germany Tel: +49-6206-5030 Fax: +49-6206-503629 IXTH 11N80 IXTM 11N80 Fig.7 Gate Charge Characteristic Curve IXTH 13N80 IXTM 13N80 Fig.8 Forward Bias Safe Operating Area 10 10µs 100µs ID - Amperes 8 VGE - Volts Limited by RDS(on) V DS = 400V ID = 13A IG = 10mA 6 4 10 1ms 10ms 1 100ms 2 0 0.1 0 25 50 75 100 125 150 1 10 Gate Charge - nCoulombs 1000 VDS - Volts Fig.9 Capacitance Curves Fig.10 Source Current vs. Source to Drain Voltage 4500 18 Ciss 4000 16 3500 14 3000 ID - Amperes Capacitance - pF 100 f = 1 MHz V DS = 25V 2500 2000 1500 1000 5 10 8 6 T J = 125°C TJ = 25°C 2 Crss 0 0 10 4 Coss 500 12 15 20 0 0.0 25 0.2 VCE - Volts 0.4 0.6 0.8 1.0 1.2 1.4 VSD - Volts Fig.11 Transient Thermal Impedance Thermal Response - K/W 1 D=0.5 0.1 D=0.2 D=0.1 D=0.05 0.01 D=0.02 D=0.01 Single Pulse 0.001 0.00001 0.0001 0.001 0.01 Pulse Width - Seconds IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 0.1 1 10