IXTH140N075L2

Preliminary Technical Information IXTT140N075L2HV IXTH140N075L2 LinearL2TM Power MOSFET w/Extended FBSOA VDSS ID25 = = < RDS(on) 75V 140A  11m N-Channel Enhancement Mode Avalanche Rated TO-268HV (IXTT) G S Symbol Test Conditions Maximum Ratings VDSS TJ = 25C to 150C 75 V VDGR TJ = 25C to 150C, RGS = 1M 75 V VGSS Continuous 20 V VGSM Transient 30 V ID25 IDM TC = 25C TC = 25C, Pulse Width Limited by TJM 140 500 A A IA EAS TC = 25C TC = 25C 140 1.5 A J PD TC = 25C 540 W -55...+150  C TJM 150  C Tstg -55...+150  C TJ TL TSOLD Maximum Lead Temperature for Soldering 1.6 mm (0.062in.) from Case for 10s Md Mounting Torque (TO-247) Weight TO-268HV TO-247 300 260 °C °C 1.13/10 Nm/lb.in 4 6 g g D (Tab) TO-247 (IXTH) G D G = Gate S = Source S D (Tab) D = Drain Tab = Drain Features     Designed for Linear Operation International Standard Packages AvalancheRated Guaranteed FBSOA at 75C Advantages  Easy to Mount  Space Savings  High Power Density Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max. BVDSS VGS = 0V, ID = 250μA 75 VGS(th) VDS = VGS, ID = 250μA 2.0 IGSS VGS = 20V, VDS = 0V IDSS VDS = VDSS, VGS = 0V RDS(on) VGS = 10V, ID = 0.5 • ID25, Note 1 TJ = 125C © 2017 IXYS CORPORATION, All rights reserved Applications V 4.5 V 100 nA      Solid State Circuit Breakers Soft Start Controls Linear Amplifiers Programmable Loads Current Regulators 5 A 25 A 11 m DS100774A(5/17) IXTT140N075L2HV IXTH140N075L2 Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max. gfs VDS = 10V, ID = 60A, Note 1 50 RGi Gate Input Resistance Ciss Coss VGS = 0V, VDS = 25V, f = 1MHz Crss td(on) tr td(off) tf VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 RG = 2 (External) 9300 pF 2190 pF 750 pF 26 ns 83 ns 100 ns 33 ns 275 nC 40 nC 108 nC 0.23 C/W RthJC RthCS S  VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 Qgd 80 1.24 Resistive Switching Times Qg(on) Qgs 65 TO-247 0.21      C/W Safe Operating Area Specification Symbol Test Conditions Characteristic Values Min. Typ. Max. SOA VDS = 75V, ID = 4.35A, TC = 75C, Tp = 5s 326 W Source-Drain Diode Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max. IS VGS = 0V 140 A ISM Repetitive, pulse width limited by TJM 560 A VSD IF = 100A, VGS = 0V, Note 1 1.4 V trr IRM QRM IF = 70A, -di/dt = 100A/s, VR = 37.5V, VGS = 0V Note: 200 14.0 1.4 ns A μC 1. Pulse test, t  300s; duty cycle, d  2%. PRELIMINARY TECHNICAL INFORMATION The product presented herein is under development. The Technical Specifications offered are derived from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a "considered reflection" of the anticipated result. IXYS reserves the right to change limits, test conditions, and dimensions without notice. IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,860,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 IXTT140N075L2HV IXTH140N075L2 o o Fig. 1. Output Characteristics @ TJ = 25 C Fig. 2. Extended Output Characteristics @ TJ = 25 C 140 700 VGS = 20V 12V 10V 9V 120 600 7V 80 6V 60 40 20 12V 500 I D - Amperes 100 I D - Amperes VGS = 20V 8V 5V 400 10V 300 9V 200 8V 100 7V 6V 0 5V 0 0.0 0.5 1.0 1.5 2.0 0 2 4 6 8 VDS - Volts 14 16 18 20 Fig. 4. RDS(on) Normalized to ID = 70A Value vs. Junction Temperature o 2.4 140 VGS = 20V 12V 10V 9V 2.0 RDS(on) - Normalized 7V 80 6V 60 VGS = 10V 2.2 8V 100 I D - Amperes 12 VDS - Volts Fig. 3. Output Characteristics @ TJ = 125 C 120 10 40 1.8 I D = 140A 1.6 1.4 I D = 70A 1.2 1.0 5V 20 0.8 4V 0 0.6 0.0 0.5 1.0 1.5 2.0 2.5 -50 3.0 -25 0 Fig. 5. RDS(on) Normalized to ID = 70A Value vs. Drain Current 4.0 VGS = 10V 20V 50 75 100 125 150 125 150 Fig. 6. Maximum Drain Current vs. Case Temperature 160 140 o TJ = 125 C 120 3.0 I D - Amperes RDS(on) - Normalized 3.5 25 TJ - Degrees Centigrade VDS - Volts 2.5 2.0 1.5 100 80 60 o TJ = 25 C 40 1.0 20 0.5 0 0 100 200 300 400 500 I D - Amperes © 2017 IXYS CORPORATION, All rights reserved 600 700 -50 -25 0 25 50 75 TC - Degrees Centigrade 100 IXTT140N075L2HV IXTH140N075L2 Fig. 7. Input Admittance Fig. 8. Transconductance 400 140 o 350 o TJ = - 40 C TJ = - 40 C 120 o 25 C o 125 C 100 250 g f s - Siemens I D - Amperes 300 200 150 o 25 C 80 o 125 C 60 40 100 20 50 0 0 3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5 8.0 8.5 9.0 0 9.5 50 100 150 VGS - Volts 200 250 300 350 400 450 I D - Amperes Fig. 9. Forward Voltage Drop of Intrinsic Diode Fig. 10. Gate Charge 10 600 VDS = 37.5V 9 I D = 70A 8 500 I G = 10mA 400 V GS - Volts I S - Amperes 7 300 200 6 5 4 3 o TJ = 125 C 2 100 o TJ = 25 C 1 0 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 0 2.0 VSD - Volts 40 80 120 160 200 240 Fig. 12. Maximum Transient Thermal Impedance Q - NanoCoulombs 280 G 1 Fig. 11. Capacitance Fig. 12. Maximum Transient Thermal Impedance 100,000 aaaaa 0.4 0.1 Ciss 10,000 Z (th)JC - K / W Capacitance - PicoFarads f = 1 MHz C oss 1,000 0.01 C rss 100 0 5 10 15 20 25 30 35 40 VDS - Volts IXYS reserves the right to change limits, test conditions, and dimensions. 0.001 0.00001 0.0001 0.001 0.01 0.1 Pulse Width - Seconds 1 10 IXTT140N075L2HV IXTH140N075L2 Fig. 13. Forward-Bias Safe Operating Area Fig. 14. Forward-Bias Safe Operating Area @ TC = 25oC 1,000 @ TC = 75oC 1,000 25μs RDS(on) Limit 25μs RDS(on) Limit 100μs 100μs I D - Amperes 1ms 10ms 100ms 10 I D - Amperes 100 100 1ms 10ms 10 DC 100ms TJ = 150oC o TJ = 150 C DC o TC = 75 C Single Pulse TC = 25oC Single Pulse 1 1 1 10 VDS - Volts © 2017 IXYS CORPORATION, All rights reserved 100 1 10 100 VDS - Volts IXYS REF: T_140N075L2(8R-T07)1-12-17 IXTT140N075L2HV IXTH140N075L2 TO-268HV Outline PINS: 1 - Gate 2 - Source 3 - Drain TO-247 Outline D A A2 A2 Q + R A 0P O + 0K M D B M B E S D2 + D1 D 0P1 1 2 3 4 ixys option L1 C E1 L A1 c b b2 b4 e + J M C AM O PINS: 1 - Gate 2, 4 - Drain 3 - Source IXYS reserves the right to change limits, test conditions, and dimensions. Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. 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