IXTH14N80

MegaMOSTMFET IXTH 14N80 VDSS = 800 V = 14 A ID25 RDS(on) = 0.70 Ω N-Channel Enhancement Mode Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 800 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 800 V VGS Continuous ±20 V VGSM Transient ±30 V ID25 TC = 25°C 14 A IDM TC = 25°C, pulse width limited by TJM 56 A PD TC = 25°C 300 W -55 ... +150 °C TJM 150 °C T stg -55 ... +150 °C TJ D (TAB) G = Gate, S = Source, Mounting torque 1.13/10 Nm/lb.in. Weight 6 g Features l l l l l Symbol Test Conditions VDSS VGS = 0 V, ID = 3 mA VGS(th) VDS = VGS, ID = 250 µA IGSS VGS = ±20 VDC, VDS = 0 IDSS VDS = 0.8 • VDSS VGS = 0 V R DS(on) Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 800 2 TJ = 25°C TJ = 125°C VGS = 10 V, ID = 0.5 ID25 Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 % IXYS reserves the right to change limits, test conditions, and dimensions.. © 2000 IXYS All rights reserved D = Drain, TAB = Drain °C Max. lead temperature for soldering 300 1.6 mm (0.063 in) from case for 10 s Md TO-247 AD V 4.5 V ±100 nA 250 1 µA mA 0.7 Ω International standard package Low RDS (on) HDMOSTM process Rugged polysilicon gate cell structure Low package inductance (< 5 nH) - easy to drive and to protect Fast switching times Applications l l l l Switch-mode and resonant-mode power supplies Motor control Uninterruptible Power Supplies (UPS) DC choppers Advantages l l l Easy to mount with 1 screw (isolated mounting screw hole) Space savings High power density 96518F(12/97) 1-4 IXTH 14N80 Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. gfs VDS = 10 V; ID = 0.5 • ID25, pulse test C iss C oss VGS = 0 V, VDS = 25 V, f = 1 MHz C rss t d(on) 8 14 S 4500 pF 310 pF 65 pF 20 50 ns tr VGS = 10 V, VDS = 0.5 • VDSS, ID = 0.5 ID25 33 50 ns td(off) RG = 2 Ω, (External) 63 100 ns 32 50 ns 145 170 nC 30 45 nC 55 80 nC tf Q g(on) Q gs VGS = 10 V, VDS = 0.5 • VDSS, ID = 0.5 ID25 Q gd R thJC 0.42 R thCK 0.25 Source-Drain Diode K/W K/W Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. Symbol Test Conditions IS VGS = 0 V 14 A ISM Repetitive; pulse width limited by TJM 56 A VSD IF = IS, VGS = 0 V, Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 % 1.5 V t rr IF = IS, -di/dt = 100 A/µs, VR = 100 V © 2000 IXYS All rights reserved 800 TO-247 AD Outline 1 2 Terminals: 1 - Gate 3 - Source 3 2 - Drain Tab - Drain Dim. Millimeter Inches Min. Max. Min. Max. A 4.7 5.3 .185 .209 A1 2.2 2.54 .087 .102 A2 2.2 2.6 .059 .098 b 1.0 1.4 .040 .055 b1 1.65 2.13 .065 .084 b2 2.87 3.12 .113 .123 C .4 .8 .016 .031 D 20.80 21.46 .819 .845 E 15.75 16.26 .610 .640 e 5.20 5.72 0.205 0.225 L 19.81 20.32 .780 .800 L1 4.50 .177 ∅ P 3.55 3.65 .140 .144 Q 5.89 6.40 0.232 0.252 R 4.32 5.49 .170 .216 S 6.15 BSC 242 BSC ns IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 2-4 IXTH 14N80 Figure 1. Output Characteristics at 25OC Figure 2. Output Characteristics at 125OC 20 20 16 ID - Amperes TJ = 125OC VGS = 9V 8V 7V 6V VGS = 9V 8V 7V 6V 16 5V ID - Amperes TJ = 25OC 12 8 5V 12 8 4V 4 4 4V 0 0 0 2 4 6 8 0 10 4 Figure 3. RDS(on) normalized to 0.5 ID25 value vs. ID 20 2.6 VGS = 10V VGS = 10V 2.4 O TJ = 125 C RDS(ON) - Normalized RDS(ON) - Normalized 16 Figure 4. RDS(on) normalized to 0.5 ID25 value vs. TJ 2.6 2.2 12 VDS - Volts VDS - Volts 2.4 8 2.0 1.8 1.6 1.4 TJ = 25OC 1.2 1.0 2.2 2.0 ID = 15A 1.8 1.6 ID = 7.5A 1.4 1.2 0.8 0 5 10 15 20 1.0 25 25 50 ID - Amperes 75 100 125 150 6 7 TJ - Degrees C Figure 5. Drain Current vs. Case Temperature Figure 6. Admittance Curves 20 16 14 16 ID - Amperes ID - Amperes 12 12 8 10 8 6 TJ = 125oC 4 4 TJ = 25oC 2 0 -50 -25 0 25 50 75 TC - Degrees C © 2000 IXYS All rights reserved 100 125 150 0 2 3 4 5 VGS - Volts 3-4 IXTH 14N80 Figure 7. Gate Charge Figure 8. Capacitance Curves 12 5000 2500 Capacitance - pF 10 VGS - Volts Ciss VDS = 400V ID = 15A IG = 1mA 8 6 4 2 f = 1MHz 1000 500 Coss 250 Crss 100 0 50 0 50 100 150 200 250 0 5 10 Gate Charge - nC 15 20 25 30 35 40 VDS - Volts Figure 9. Source Current vs. Source to Drain Voltage Figure10. Forward Bias Safe Operating Area 1 00 50 ID - Amperes ID - Amperes 40 30 TJ = 125OC 20 TJ = 25OC 10 0.1ms 1ms 1 TC = 25OC 10ms 100ms 10 DC 0 0.2 0. 1 0.4 0.6 0.8 1.0 1.2 1.4 10 1 00 1 000 VDS - Volts VSD - Volts Figure 11. Transient Thermal Resistance 1 R(th)JC - K/W D=0.5 0.1 D=0.2 D=0.1 D=0.05 0.01 D = Duty Cycle D=0.02 D=0.01 Single pulse 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 Pulse Width - Seconds © 2000 IXYS All rights reserved 4-4 Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. 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