IXTH160N15T

Preliminary Technical Information TrenchHVTM Power MOSFET IXTH160N15T VDSS ID25 RDS(on) = 150 V = 160 A Ω ≤ 9.6 mΩ N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 175°C TJ = 25°C to 175°C; RGS = 1MΩ 150 150 V V VGSM Transient ± 30 V ID25 ILRMS IDM TC = 25°C Lead Current Limit, RMS TC = 25°C, pulse width limited by TJM 160 75 430 A A A IA EAS TC = 25°C TC = 25°C 5 1.0 A J dv/dt IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 175°C 10 V/ns Pd TC = 25°C 830 W -55 ... +175 175 -55 ... +175 °C °C °C 300 260 °C °C TJ TJM Tstg TL TSOLD 1.6 mm (0.062 in.) from case for 10s Plastic body for 10 seconds Md Mounting torque G G = Gate S = Source D (TAB) S D = Drain TAB = Drain 1.13 / 10 Nm/lb.in. Weight 6 Symbol Test Conditions (TJ = 25°C unless otherwise specified) g Characteristic Values Min. Typ. Max. BVDSS VGS = 0 V, ID = 250 μA 150 VGS(th) VDS = VGS, ID = 1 mA 2.5 IGSS VGS = ± 20 V, VDS = 0 V IDSS VDS = VDSS VGS = 0 V RDS(on) TO-247 V TJ = 150°C VGS = 10 V, ID = 0.5 • ID25, Note 1 © 2007 IXYS CORPORATION, All rights reserved 8.0 5.0 V ± 200 nA 25 300 μA μA 9.6 mΩ Features z Unclamped Inductive Switching (UIS) rated z Low package inductance - easy to drive and to protect z 175 °C Operating Temperature Advantages Easy to mount z Space savings z High power density z DS99840 (06/07) IXTH160N15T Symbol Test Conditions Characteristic Values (TJ = 25°C unless otherwise specified) gfs VDS= 10V; ID = 0.5 • ID25, Note 1 Typ. 65 105 S 8800 pF 1170 pF 150 pF Ciss Coss TO-247AD Outline Min. VGS = 0V, VDS = 25V, f = 1 MHz Crss Max. td(on) Resistive Switching Times 21 ns tr VGS = 15V, VDS = 0.5 • VDSS, ID = 0.5 ID25 21 ns td(off) RG = 2.0Ω (External) 60 ns 31 ns 160 nC 43 nC 46 nC tf Qg(on) Qgs VGS= 10V, VDS = 0.5 • VDSS, ID = 25A Qgd RthJC 0.18 °C/W RthCS 0.21 °C/W Source-Drain Diode Symbol Test Conditions TJ = 25°C unless otherwise specified) Min. Characteristic Values Typ. Max. IS VGS = 0V 160 A ISM Pulse width limited by TJM 430 A VSD IF = 50A, VGS = 0V, Note 1 1.2 V trr IF = 80A, -di/dt = 200A/μs 115 1 2 3 Terminals: 1 - Gate 3 - Source Dim. Millimeter Min. Max. A 4.7 5.3 A1 2.2 2.54 A2 2.2 2.6 b 1.0 1.4 1.65 2.13 b1 b2 2.87 3.12 C .4 .8 D 20.80 21.46 E 15.75 16.26 e 5.20 5.72 L 19.81 20.32 L1 4.50 ÆP 3.55 3.65 Q 5.89 6.40 R 4.32 5.49 S 6.15 BSC 2 - Drain Tab - Drain Inches Min. Max. .185 .209 .087 .102 .059 .098 .040 .055 .065 .084 .113 .123 .016 .031 .819 .845 .610 .640 0.205 0.225 .780 .800 .177 .140 .144 0.232 0.252 .170 .216 242 BSC ns VR = 75V, VGS = 0V Notes: 1. Pulse test, t ≤ 300 ms, duty cycle, d ≤ 2 % PRELIMINARY TECHNICAL INFORMATION The product presented herein is under development. The Technical Specifications offered are derived from data gathered during objective characterizations of preliminary engineering lots; but also may yet contain some information supplied during a pre-production design evaluation. IXYS reserves the right to change limits, test conditions, and dimensions without notice. IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or moreof the following U.S. patents: 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 IXTH160N15T Fig. 1. Output Characteristics @ 25ºC Fig. 2. Extended Output Characteristics @ 25ºC 160 350 VGS = 10V 9V 8V 140 7V 120 250 6V 100 I D - Amperes I D - Amperes VGS = 10V 9V 8V 300 80 60 7V 200 150 6V 100 40 50 5V 20 5V 0 0 0 0.2 0.4 0.6 0.8 1 1.2 1.4 0 1.6 1 2 3 4 VDS - Volts 6 7 8 9 10 Fig. 4. RDS(on) Normalized to ID = 80A Value vs. Junction Temperature Fig. 3. Output Characteristics @ 150ºC 160 3.0 VGS = 10V 9V 8V 7V 140 2.8 VGS = 10V 2.6 2.4 RDS(on) - Normalized 120 6V ID - Amperes 5 VDS - Volts 100 80 60 5V 40 2.2 2.0 I D = 160A 1.8 I D = 80A 1.6 1.4 1.2 1.0 0.8 20 0.6 0 0.4 0 0.4 0.8 1.2 1.6 2 2.4 2.8 3.2 3.6 -50 -25 0 25 50 75 100 125 150 175 TJ - Degrees Centigrade VDS - Volts Fig. 5. RDS(on) Normalized to ID = 80A Value vs. Drain Current Fig. 6. Drain Current vs. Case Temperature 90 4.0 VGS = 10V 15V - - - - 3.5 External Lead Current Limit 80 I D - Amperes RDS(on) - Normalized 70 TJ = 175ºC 3.0 2.5 2.0 60 50 40 30 1.5 TJ = 25ºC 20 1.0 10 0 0.5 0 40 80 120 160 200 I D - Amperes © 2007 IXYS CORPORATION, All rights reserved 240 280 320 -50 -25 0 25 50 75 100 TC - Degrees Centigrade 125 150 175 IXTH160N15T Fig. 8. Transconductance Fig. 7. Input Admittance 200 180 180 160 160 140 g f s - Siemens 140 ID - Amperes TJ = - 40ºC 120 100 TJ = 150ºC 25ºC - 40ºC 80 120 25ºC 100 150ºC 80 60 60 40 40 20 20 0 0 3.5 4 4.5 5 5.5 6 0 6.5 20 40 60 80 VGS - Volts 100 120 140 160 180 200 I D - Amperes Fig. 9. Forward Voltage Drop of Intrinsic Diode Fig. 10. Gate Charge 300 10 VDS = 75V 9 250 I D = 25A 8 200 VGS - Volts IS - Amperes I G = 10mA 7 150 6 5 4 TJ = 150ºC 100 3 TJ = 25ºC 2 50 1 0 0 0.4 0.5 0.6 0.7 0.8 0.9 1 1.1 1.2 1.3 0 20 40 60 80 100 120 140 VSD - Volts QG - NanoCoulombs Fig. 11. Capacitance Fig. 12. Maximum Transient Thermal Impedance 100,000 160 1.00 Ciss 10,000 Z(th)JC - ºC / W Capacitance - PicoFarads f = 1 MHz C oss 1,000 0.10 0.01 C rss 100 0 5 10 15 20 25 30 35 40 VDS - Volts IXYS reserves the right to change limits, test conditions, and dimensions. 0.00 0.00001 0.0001 0.001 0.01 0.1 Pulse Width - Seconds 1 10 IXTH160N15T Fig. 13. Resistive Turn-on Rise Time vs. Junction Temperature Fig. 14. Resistive Turn-on Rise Time vs. Drain Current 24 24 RG = 2Ω 22 VGS = 15V TJ = 25ºC VDS = 75V 20 t r - Nanoseconds t r - Nanoseconds 22 18 16 I D = 40A 14 I D = 80A 12 RG = 2Ω 20 VGS = 15V VDS = 75V 18 16 14 12 10 TJ = 125ºC 10 25 35 45 55 65 75 85 95 105 115 125 40 45 50 55 42 27 td(on) - - - - tr 26 23 22 22 18 21 14 20 VDS = 75V t f - Nanoseconds 24 100 RG = 2Ω, VGS = 15V 32 90 I D = 40A 28 80 I D = 80A 24 70 20 10 19 3 4 5 6 7 8 9 60 16 10 25 35 45 55 RG - Ohms 110 td(off) - - - - t f - Nanoseconds TJ = 125ºC 80 24 70 TJ = 25ºC 20 60 TJ = 125ºC 50 55 60 115 50 125 100 240 90 220 80 65 70 I D - Amperes © 2007 IXYS CORPORATION, All rights reserved 75 80 200 I D = 40A 70 180 I D = 80A 60 160 50 140 40 td(off) - - - - 120 TJ = 125ºC, VGS = 15V 100 tf 30 VDS = 75V 20 16 50 105 t d ( o f f ) - Nanoseconds 90 t d ( o f f ) - Nanoseconds VDS = 75V 32 45 95 260 100 RG = 2Ω, VGS = 15V 40 85 110 t f - Nanoseconds tf 28 75 Fig. 18. Resistive Turn-off Switching Times vs. Gate Resistance 40 TJ = 25ºC 65 TJ - Degrees Centigrade Fig. 17. Resistive Turn-off Switching Times vs. Drain Current 36 t d ( o f f ) - Nanoseconds 25 I D = 80A, 40A 2 80 td(off) - - - - tf 36 t d ( o n ) - Nanoseconds t r - Nanoseconds 75 110 26 VDS = 75V 30 70 40 TJ = 125ºC, VGS = 15V 34 65 Fig. 16. Resistive Turn-off Switching Times vs. Junction Temperature Fig. 15. Resistive Turn-on Switching Times vs. Gate Resistance 38 60 I D - Amperes TJ - Degrees Centigrade 80 10 60 2 3 4 5 6 7 8 9 10 RG - Ohms IXYS REF: T_160N15T(8W) 06-07-07 Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications.Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics.