IXTT16N20D2
IXTH16N20D2
Depletion Mode
MOSFET
VDSX
ID(on)
RDS(on)
=
>
200V
16A
80m
D
N-Channel
TO-268 (IXTT)
G
G
S
S
D (Tab)
TO-247 (IXTH)
Symbol
Test Conditions
Maximum Ratings
VDSX
TJ = 25C to 150C
200
V
VDGX
TJ = 25C to 150C, RGS = 1M
200
V
VGSX
Continuous
20
V
VGSM
Transient
30
V
PD
TC = 25C
695
W
- 55 ... +150
150
- 55 ... +150
C
C
C
300
260
°C
°C
1.13 / 10
Nm/lb.in.
4
6
g
g
TJ
TJM
Tstg
TL
TSOLD
Maximum Lead Temperature for Soldering
1.6 mm (0.062in.) from Case for 10s
Md
Mounting Torque (TO-247)
Weight
TO-268
TO-247
Symbol
Test Conditions
(TJ = 25C, Unless Otherwise Specified)
Characteristic Values
Min.
Typ.
Max.
BVDSX
VGS = - 5V, ID = 250A
200
VGS(off)
VDS = 25V, ID = 4mA
IGSX
VGS = 20V, VDS = 0V
IDSX(off)
VDS = VDSX, VGS = - 5V
RDS(on)
VGS = 0V, ID = 8A, Note 1
ID(on)
VGS = 0V, VDS = 25V, Note 1
- 2.0
V
100 nA
5 A
100 A
TJ = 125C
© 2017 IXYS CORPORATION, All Rights Reserved
80 m
16
D
D (Tab)
S
G = Gate
S = Source
D
= Drain
Tab = Drain
Features
• Normally ON Mode
• International Standard Packages
• Molding Epoxies Meet UL 94 V-0
Flammability Classification
Advantages
V
- 4.5
G
A
• Easy to Mount
• Space Savings
• High Power Density
Applications
•
•
•
•
•
•
Audio Amplifiers
Start-up Circuits
Protection Circuits
Ramp Generators
Current Regulators
Active Loads
DS100260E(4/17)
IXTT16N20D2
IXTH16N20D2
Symbol
Test Conditions
(TJ = 25C, Unless Otherwise Specified)
gfs
Characteristic Values
Min.
Typ.
Max.
VDS = 20V, ID = 8A, Note 1
7
Ciss
Coss
VGS = -10V, VDS = 25V, f = 1MHz
Crss
td(on)
tr
td(off)
tf
Resistive Switching Times
VGS = + 5V, VDS = 100V, ID = 8A
RG = 3.3 (External)
Qg(on)
Qgs
RthJC
RthCS
12
S
5500
pF
1360
pF
607
pF
46
ns
130
ns
270
ns
135
ns
208
nC
28
nC
110
nC
0.21
0.18 C/W
C/W
VGS = + 5V, VDS = 100V, ID = 8A
Qgd
TO-247
TO-247 Outline
Safe-Operating-Area Specification
Characteristic Values
Min.
Typ.
Max.
Symbol
Test Conditions
SOA
VDS = 200V, ID = 2.1A, TC = 75C, tp = 5s
420
W
Source-Drain Diode
Symbol
Test Conditions
(TJ = 25C, Unless Otherwise Specified)
VSD
IF = 16A, VGS = -10V, Note 1
trr
IRM
QRM
IF = 8A, -di/dt = 100A/s
VR = 100V, VGS = -10V
265
14.3
1.9
1.3
2
P
3
e
Terminals: 1 - Gate
3 - Source
Dim.
Millimeter
Min. Max.
A
4.7
5.3
2.2
2.54
A1
A2
2.2
2.6
b
1.0
1.4
b1
1.65
2.13
b2
2.87
3.12
C
.4
.8
D
20.80 21.46
E
15.75 16.26
e
5.20
5.72
L
19.81 20.32
L1
4.50
P 3.55
3.65
Q
5.89
6.40
R
4.32
5.49
S
6.15 BSC
2 - Drain
Inches
Min. Max.
.185 .209
.087 .102
.059 .098
.040 .055
.065 .084
.113 .123
.016 .031
.819 .845
.610 .640
0.205 0.225
.780 .800
.177
.140 .144
0.232 0.252
.170 .216
242 BSC
TO-268 Outline
Characteristic Values
Min.
Typ.
Max.
0.8
1
V
ns
A
μC
Note 1. Pulse test, t 300s, duty cycle, d 2%.
Terminals: 1 - Gate
3 - Source
2 - Drain
4 - Drain
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS MOSFETs and IGBTs are covered
4,835,592
by one or more of the following U.S. patents: 4,860,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1
6,534,343
6,583,505
6,683,344
6,727,585
7,005,734 B2
6,710,405 B2 6,759,692
7,063,975 B2
6,710,463
6,771,478 B2 7,071,537
7,157,338B2
IXTT16N20D2
IXTH16N20D2
o
o
Fig. 1. Output Characteristics @ TJ = 25 C
16
VGS = 5V
4V
3V
2V
14
12
VGS = 5V
180
4V
160
140
1V
10
I D - Amperes
I D - Amperes
Fig. 2. Extended Output Characteristics @ TJ = 25 C
200
0V
8
6
3V
120
100
2V
80
60
1V
-1V
4
40
2
0
0
0.1
0.2
0.3
0.4
- 2V
20
- 3V
0
0.5
0.6
0V
-1V
- 2V
0
0.7
5
10
I D - Amperes
I D - Amperes
VGS = 0V
28
0V
-1V
- 0.4V
20
- 0.8V
16
12
4
- 1.2V
8
- 2V
2
- 1.6V
4
- 2.0V
- 2.4V
- 3V
0
0
0.0
0.2
0.4
0.6
0.8
1.0
1.2
0
10
20
VDS - Volts
o
50
Fig. 6. Dynamic Resistance vs. Gate Voltage
∆ VDS = 50V - 25V
1.E+09
32
1.E+08
28
- 0.4V
1.E+07
24
RO - Ohms
I D - Amperes
40
1.E+10
VGS = 0V
36
30
VDS - Volts
Fig. 5. Drain Current @ TJ = 100 C
40
35
32
24
6
30
Fig. 4. Drain Current @ TJ = 25 C
10
8
25
36
VGS = 5V
3V
2V
1V
12
20
o
o
Fig. 3. Output Characteristics @ TJ = 125 C
16
14
15
VDS - Volts
VDS - Volts
- 0.8V
20
16
- 1.2V
4
o
TJ = 25 C
1.E+05
o
TJ = 100 C
1.E+04
12
8
1.E+06
- 1.6V
1.E+03
- 2.0V
- 2.4V
1.E+02
0
1.E+01
0
10
20
30
VDS - Volts
© 2017 IXYS CORPORATION, All Rights Reserved
40
50
-5
-4
-3
-2
VGS - Volts
-1
0
IXTT16N20D2
IXTH16N20D2
Fig. 8. RDS(on) Normalized to ID = 8A Value
vs. Drain Current
Fig. 7. Normalized RDS(on) vs. Junction Temperature
1.6
2.6
VGS = 0V
1.5
I D = 8A
VGS = 0V
5V
2.2
RDS(on) - Normalized
RDS(on) - Normalized
1.4
1.3
1.2
1.1
1.8
1.4
o
TJ = 125 C
1.0
o
1.0
TJ = 25 C
0.6
0.9
0.8
0.2
-50
-25
0
25
50
75
100
125
150
0
5
10
15
Fig. 9. Input Admittance
25
30
35
40
Fig. 10. Transconductance
50
30
VDS = 20V
VDS = 20V
o
o
o
TJ = - 40 C, 25 C, 125 C
25
g f s - Siemens
40
I D - Amperes
20
I D - Amperes
TJ - Degrees Centigrade
30
20
o
TJ = 125 C
o
25 C
o
- 40 C
10
20
15
10
5
0
0
-4.0
-3.5
-3.0
-2.5
-2.0
-1.5
-1.0
-0.5
0.0
0.5
0
1.0
5
10
15
20
25
30
35
40
45
50
I D - Amperes
VGS - Volts
Fig. 11. Normalized Breakdown and Threshold
Voltages vs. Junction Temperature
Fig. 12. Forward Voltage Drop of Intrinsic Diode
30
1.3
VGS = -10V
25
1.2
20
I S - Amperes
BV / VGS(off)
VGS(off) @ VDS = 25V
1.1
BVDSX @ VGS = - 5V
1.0
15
10
o
TJ = 125 C
0.9
o
TJ = 25 C
5
0
0.8
-50
-25
0
25
50
75
100
125
150
TJ - Degrees Centigrade
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
0.3
0.4
0.5
0.6
VSD - Volts
0.7
0.8
0.9
IXTT16N20D2
IXTH16N20D2
Fig. 14. Gate Charge
Fig. 13. Capacitance
5
100,000
VDS = 100V
4
f = 1 MHz
I D = 8A
I G = 10mA
2
10,000
Ciss
VGS - Volts
Capacitance - PicoFarads
3
Coss
1,000
1
0
-1
-2
-3
-4
Crss
-5
100
0
5
10
15
20
25
30
35
0
40
20
40
60
80
100
120
140
160
180
200
220
QG - NanoCoulombs
VDS - Volts
Fig. 15. Forward-Bias Safe Operating Area
Fig. 16. Forward-Bias Safe Operating Area
o
o
@ TC = 25 C
@ TC = 75 C
1,000
1,000
o
o
TJ = 150 C
TJ = 150 C
o
o
TC = 25 C
Single Pulse
RDS(on) Limit
100
100μs
1ms
I D - Amperes
25μs
I D - Amperes
100
TC = 75 C
Single Pulse
10
RDS(on) Limit
25μs
100μs
10
1ms
10ms
100ms
DC
DC
1
1
1.000
10ms
100ms
1
10
100
VDS - Volts
1,000
1
Fig. 17. Maximum
Transient Thermal
Impedance
10
100
1,000
VDS - Volts
Fig. 17. Maximum Transient Thermal Impedance
hvjv
0.300
Z(th)JC - K / W
0.100
0.010
0.001
0.00001
0.0001
0.001
0.01
0.1
1
10
Pulse Width - Seconds
© 2017 IXYS CORPORATION, All Rights Reserved
IXYS REF: T_16N20D2(8C)4-08-10
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evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for,
and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics.