IXTH16N50D2

IXTH16N50D2 IXTT16N50D2 Depletion Mode MOSFET VDSX ID(on) RDS(on) D = >  500V 16A 300m  N-Channel TO-247 (IXTH) G S G Symbol Test Conditions Maximum Ratings VDSX TJ = 25C to 150C 500 V VDGX TJ = 25C to 150C, RGS = 1M 500 V VGSX Continuous 20 V VGSM Transient 30 V PD TC = 25C 695 W - 55 ... +150 150 - 55 ... +150 C C C 300 260 °C °C 1.13 / 10 Nm/lb.in. 6 4 g g TJ TJM Tstg TL TSOLD Maximum Lead Temperature for Soldering 1.6 mm (0.062in.) from Case for 10s Md Mounting Torque (TO-247) Weight TO-247 TO-268 D D (Tab) S TO-268 (IXTT) G S D (Tab) G = Gate S = Source D = Drain Tab = Drain Features • Normally ON Mode • International Standard Packages • Molding Epoxies Meet UL 94 V-0 Flammability Classification Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max. BVDSX VGS = - 5V, ID = 250A 500 VGS(off) VDS = 25V, ID = 4mA IGSX VGS = 20V, VDS = 0V IDSX(off) VDS = VDSX, VGS = - 5V RDS(on) VGS = 0V, ID = 8A, Note 1 ID(on) VGS = 0V, VDS = 25V, Note 1 - 2.0 Advantages V - 4.0 V 100 nA 10 A 150 A TJ = 125C © 2017 IXYS CORPORATION, All Rights Reserved 300 m 16 A • Easy to Mount • Space Savings • High Power Density Applications • • • • • • Audio Amplifiers Start-up Circuits Protection Circuits Ramp Generators Current Regulators Active Loads DS100261C(4/17) IXTH16N50D2 IXTT16N50D2 Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) gfs Characteristic Values Min. Typ. Max. VDS = 30V, ID = 8A, Note 1 7 Ciss Coss 12 S 5250 pF 515 pF 130 pF VGS = -10V, VDS = 25V, f = 1MHz Crss td(on) tr td(off) tf Resistive Switching Times VGS = + 5V, VDS = 250V, ID = 8A RG = 3.3 (External) Qg(on) Qgs VGS = + 5V, VDS = 250V, ID = 8A Qgd RthJC RthCS TO-247 Outline TO-247 50 ns 173 ns 203 ns 220 ns 199 nC 18 nC 100 nC 0.21 0.18 C/W C/W Safe-Operating-Area Specification Characteristic Values Min. Typ. Max. Symbol Test Conditions SOA VDS = 500V, ID = 0.5A, TC = 75C, tp = 5s 250 W Source-Drain Diode 1 2 P 3 e Terminals: 1 - Gate 3 - Source Dim. Millimeter Min. Max. A 4.7 5.3 2.2 2.54 A1 A2 2.2 2.6 b 1.0 1.4 b1 1.65 2.13 b2 2.87 3.12 C .4 .8 D 20.80 21.46 E 15.75 16.26 e 5.20 5.72 L 19.81 20.32 L1 4.50 P 3.55 3.65 Q 5.89 6.40 R 4.32 5.49 S 6.15 BSC 2 - Drain Inches Min. Max. .185 .209 .087 .102 .059 .098 .040 .055 .065 .084 .113 .123 .016 .031 .819 .845 .610 .640 0.205 0.225 .780 .800 .177 .140 .144 0.232 0.252 .170 .216 242 BSC TO-268 Outline Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) VSD IF = 16A, VGS = -10V, Note 1 trr IRM QRM IF = 8A, -di/dt = 100A/s VR = 100V, VGS = -10V Characteristic Values Min. Typ. Max. 0.8 695 20 7 1.3 V ns A μC Terminals: 1 - Gate 3 - Source 2 - Drain Tab - Drain Note 1. Pulse test, t  300s, duty cycle, d  2%. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,860,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 IXTH16N50D2 IXTT16N50D2 o Fig. 2. Extended Output Characteristics @ TJ = 25 C 80 VGS = 5V 2V 1V 14 VGS = 5V 3V 70 12 10 - 0.5V 8 -1.0V 6 4 1.5V 50 1V 40 0.5V 30 0V 20 -1.5V 2 - 0.5V -1V 10 - 2.0V - 2.5V 0 0.0 0.5 1.0 1.5 2.0 - 2V 0 2.5 3.0 3.5 0 5 10 24 I D - Amperes -1.0V 8 -1.5V 6 - 0.4V 20 16 - 0.8V 12 - 1.2V 8 4 - 2.0V 2 - 1.6V 4 - 2.5V - 3.0V 0 2 3 4 5 - 2.0V - 2.4V 0 6 7 0 10 20 VDS - Volts 30 40 50 VDS - Volts o Fig. 6. Dynamic Resistance vs. Gate Voltage Fig. 5. Drain Current @ TJ = 100 C 32 35 VGS = 0V 28 10 1 30 Fig. 4. Drain Current @ TJ = 25 C - 0.5V 0 25 32 VGS = 5.0V 1.0V 0.5V 0V 12 20 o o Fig. 3. Output Characteristics @ TJ = 125 C 16 14 15 VDS - Volts VDS - Volts I D - Amperes 2V 60 - 0V I D - Amperes I D - Amperes o Fig. 1. Output Characteristics @ TJ = 25 C 16 1.E+10 VGS = 0V ∆ VDS = 50V - 25V 1.E+09 28 1.E+08 - 0.4V 1.E+07 20 RO - Ohms I D - Amperes 24 - 0.8V 16 12 1.E+06 o TJ = 25 C 1.E+05 o TJ = 100 C 1.E+04 - 1.2V 1.E+03 8 4 0 0 10 - 1.6V 1.E+02 - 2.0V - 2.4V 1.E+01 20 1.E+00 30 VDS - Volts © 2017 IXYS CORPORATION, All Rights Reserved 40 50 -5 -4 -3 -2 VGS - Volts -1 0 IXTH16N50D2 IXTT16N50D2 Fig. 8. RDS(on) Normalized to ID = 8A Value vs. Drain Current Fig. 7. Normalized RDS(on) vs. Junction Temperature 2.5 4 VGS = 0V 2.0 3 RDS(on) - Normalized RDS(on) - Normalized VGS = 0V 5V 3.5 I D = 8A 1.5 1.0 2.5 o TJ = 125 C 2 1.5 1 o TJ = 25 C 0.5 0.5 0 -50 -25 0 25 50 75 100 125 150 0 5 10 15 Fig. 9. Input Admittance 25 30 35 40 45 50 40 45 50 Fig. 10. Transconductance 50 30 VDS = 30V o VDS = 30V o o TJ = - 40 C, 25 C, 125 C 25 g f s - Siemens 40 I D - Amperes 20 I D - Amperes TJ - Degrees Centigrade 30 o TJ = 125 C o 25 C o - 40 C 20 10 20 15 10 5 0 0 -3.5 -3.0 -2.5 -2.0 -1.5 -1.0 -0.5 0.0 0.5 0 1.0 5 10 15 Fig. 11. Breakdown and Threshold Voltages vs. Junction Temperature 1.3 20 25 30 35 I D - Amperes VGS - Volts Fig. 12. Forward Voltage Drop of Intrinsic Diode 30 VGS = -10V 25 VGS(off) @ VDS = 25V 20 I S - Amperes BV / VGS(off) - Normalized 1.2 1.1 BVDSX @ VGS = - 5V 1.0 15 o TJ = 125 C 10 o TJ = 25 C 0.9 5 0 0.8 -50 -25 0 25 50 75 100 125 150 TJ - Degrees Centigrade IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 0.3 0.4 0.5 0.6 VSD - Volts 0.7 0.8 0.9 IXTH16N50D2 IXTT16N50D2 Fig. 13. Capacitance Fig. 14. Gate Charge 100,000 5 VDS = 250V 4 I D = 8A 3 10,000 Ciss 1,000 I G = 10mA 2 VGS - Volts Capacitance - PicoFarads f = 1 MHz Coss 1 0 -1 -2 100 -3 Crss -4 -5 10 0 5 10 15 20 25 30 35 0 40 20 40 60 100 120 140 160 180 200 Fig. 16. Forward-Bias Safe Operating Area Fig. 15. Forward-Bias Safe Operating Area @ TC = 75oC o @ TC = 25 C 100 80 QG - NanoCoulombs VDS - Volts 100 RDS(on) Limit RDS(on) Limit 25μs 25μs 100μs 10 1ms 10ms 1 10.000 Fig. 100μs I D - Amperes I D - Amperes 10 100ms DCMaximum 17. 1ms 10ms 1 Transient Thermal Impedance DC o TC = 75 C Single Pulse o TC = 25 C Single Pulse 0.1 10 1.000 100ms o TJ = 150 C o TJ = 150 C 0.1 100 1,000 10 100 VDS - Volts 1,000 VDS - Volts Fig. 17. Maximum Transient Thermal Impedance hvjv 0.300 Z (th)JC - K / W 0.100 0.010 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 Pulse Width - Seconds © 2017 IXYS CORPORATION, All Rights Reserved IXYS REF: T_16N50D2(8C)4-08-10 Disclaimer Notice - Information furnished is believed to be accurate and reliable. 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