IXTH16P20

Standard Power MOSFET IXTH 16P20 P-Channel Enhancement Mode Avalanche Rated VDSS ID25 RDS(on) = -200 V = -16 A = 0.16 Ω Preliminary Data Sheet Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C -200 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ -200 V VGS Continuous ±20 V VGSM Transient ±30 V A ID25 TC = 25°C -16 IDM TC = 25°C, pulse width limited by TJ -64 A IAR TC = 25°C -16 A EAR TC = 25°C 30 mJ PD TC = 25°C 300 W -55 ... +150 °C TJM 150 °C Tstg -55 ... +150 °C 300 °C TJ TL Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s Md Mounting torque 1.13/10 Nm/lb.in. Weight 6 g TO-247 AD D (TAB) G = Gate, S = Source, Features • International standard package JEDEC TO-247 AD • Low RDS (on) HDMOSTM process • • • Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. VDSS V GS = 0 V, ID = -250 µA -200 VGS(th) V DS = VGS, ID = -250 µA -3.0 IGSS V GS = ±20 VDC, VDS = 0 IDSS V DS = 0.8 • VDSS V GS = 0 V RDS(on) VGS = -10 V, ID = 0.5 • ID25 © 2004 IXYS All rights reserved TJ = 25°C TJ = 125°C V -5.0 V ±100 nA -25 -1 µA mA 0.16 Ω D = Drain, TAB = Drain Rugged polysilicon gate cell structure Unclamped Inductive Switching (UIS) rated Low package inductance (