IXTH1N200P3HV

IXTA1N200P3HV IXTH1N200P3HV IXTH1N200P3 High Voltage Power MOSFET VDSS ID25 = 2000V = 1.0A   40 RDS(on) N-Channel Enhancement Mode TO-263HV (IXTA) G S D (Tab) Symbol Test Conditions Maximum Ratings VDSS TJ = 25C to 150C 2000 V VDGR TJ = 25C to 150C, RGS = 1M 2000 V VGSS Continuous 20 V VGSM Transient 30 V ID25 TC = 25C 1.0 A ID110 TC = 110C 0.6 A IDM TC = 25C, Pulse Width Limited by TJM 3.0 A PD TC = 25C 125 W - 55 ... +150 150 - 55 ... +150 C C C 300 260 °C °C 10..65 / 22..14.6 N/lb 1.13/10 Nm/lb.in 2.5 6.0 g g TJ TJM Tstg TL TSOLD Maximum Lead Temperature for Soldering 1.6 mm (0.062in.) from Case for 10s FC Mounting Force (TO-263HV) Md Mounting Torque (TO-247/HV) Weight TO-263HV TO-247/HV TO-247HV (IXTH) G S D TO-247 (IXTH) G BVDSS VGS = 0V, ID = 250A 2000 VGS(th) VDS = VGS, ID = 250A 2.0 IGSS VGS = 20V, VDS = 0V IDSS VDS = VDSS, VGS = 0V RDS(on) VGS = 10V, ID = 0.5A, Note 1 V    100 nA TJ = 125C 5 A 100  A 40 D = Drain Tab = Drain High Blocking Voltage High Voltage Packages  Easy to Mount Space Savings High Power Density Applications     © 2017 IXYS CORPORATION, All Rights Reserved. D (Tab) Advantages V 4.0 S Features  Characteristic Values Min. Typ. Max. D G = Gate S = Source  Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) D (Tab) High Voltage Power Supplies Capacitor Discharge Applications Pulse Circuits Laser and X-Ray Generation Systems DS100563B(2/17) IXTH1N200P3 Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max. gfs 0.4 VDS = 50V, ID = 0.5A, Note 1 Ciss VGS = 0V, VDS = 25V, f = 1MHz Coss Crss td(on) Qg(on) Qgd RthJC RthCS S 646 pF 50 pF 17 pF ns 37 ns 80 ns 23.5 nC VGS = 10V, VDS = 1kV, ID = 0.5 • ID25 Qgs 0.7 ns RG = 5 (External) tf D A A2 26 VGS = 10V, VDS = 1kV, ID = 0.5 • ID25 td(off) TO-247 Outline 16 Resistive Switching Times tr 3.1 nC 13.3 nC 0.21 1.0 C/W C/W TO-247 IXTA1N200P3HV IXTH1N200P3HV A B E Q S R D2 D1 D P1 1 2 4 3 L1 C E1 L A1 b b2 C 1 - Gate 2,4 - Drain 3 - Source b4 e Source-Drain Diode Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max. IS VGS = 0V 1 A ISM Repetitive, Pulse Width Limited by TJM 4 A VSD IF = IS, VGS = 0V, Note 1 1.5 V trr IF = 1A, -di/dt = 100A/μs, VR = 100V 2.3 TO-247HV Outline E R 0P μs A2 A E1 0P1 Q S D1 D 4 D2 1 2 1. Pulse test, t  300s, duty cycle, d  2%. Note: 3 L1 D3 L e L1 C2 E2 E3 A1 4X b c 3X 3X PINS: 1 - Gate 2 - Source 3, 4 - Drain TO-263HV Outline E e1 A3 2X A D1 D 1 H 2 3 E1 A1 L4 L3 GAUGE PLANE b b2 e1 L e2 C 08 PIN: 1 - Gate 2 - Source 3 - Drain A2 IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or moreof the following U.S. patents: 4,860,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 b1 IXTH1N200P3 o o Fig. 1. Output Characteristics @ TJ = 25 C Fig. 2. Output Characteristics @ TJ = 125 C 1.0 2.0 1.8 VGS = 10V 0.9 VGS = 10V 1.6 0.8 7V 6V 0.7 I D - Amperes 1.4 I D - Amperes IXTA1N200P3HV IXTH1N200P3HV 1.2 1.0 0.8 6V 0.6 0.5 5V 0.4 0.6 0.3 0.4 0.2 0.2 0.1 4V 5V 0.0 0.0 0 3.0 10 20 30 40 50 60 0 70 20 30 40 50 60 70 VDS - Volts Fig. 3. RDS(on) Normalized to ID = 0.5A Value vs. Junction Temperature Fig. 4. RDS(on) Normalized to ID = 0.5A Value vs. Drain Current 2.8 VGS = 10V 2.6 VGS = 10V 2.6 10 VDS - Volts 2.4 RDS(on) - Normalized RDS(on) - Normalized o 2.2 I D = 1A 1.8 I D = 0.5A 1.4 1.0 TJ = 125 C 2.2 2.0 1.8 1.6 1.4 o TJ = 25 C 1.2 0.6 1.0 0.8 0.2 -50 -25 0 25 50 75 100 125 0 150 0.2 0.4 0.6 Fig. 5. Maximum Drain Current vs. Case Temperature 1.2 0.8 1 1.2 1.4 1.6 1.8 2 I D - Amperes TJ - Degrees Centigrade Fig. 6. Input Admittance 1.6 1.4 1.0 1.2 I D - Amperes I D - Amperes 0.8 0.6 0.4 1.0 o TJ = 125 C o 25 C 0.8 o - 40 C 0.6 0.4 0.2 0.2 0.0 0.0 -50 -25 0 25 50 75 TC - Degrees Centigrade © 2017 IXYS CORPORATION, All Rights Reserved. 100 125 150 2.5 3.0 3.5 4.0 4.5 5.0 VGS - Volts 5.5 6.0 6.5 7.0 IXTH1N200P3 Fig. 7. Transconductance IXTA1N200P3HV IXTH1N200P3HV Fig. 8. Forward Voltage Drop of Intrinsic Diode 2.0 3.0 1.8 2.5 o TJ = - 40 C 1.6 2.0 I S - Amperes g f s - Siemens 1.4 o 1.2 25 C 1.0 o 125 C 0.8 1.5 o TJ = 125 C o TJ = 25 C 1.0 0.6 0.4 0.5 0.2 0.0 0.0 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 0.3 0.4 0.5 0.6 0.8 0.9 1.0 Fig. 10. Capacitance Fig. 9. Gate Charge 10,000 10 f = 1 MHz VDS = 1000V 9 Capacitance - PicoFarads I D = 0.5A 8 I G = 10mA 7 VGS - Volts 0.7 VSD - Volts I D - Amperes 6 5 4 3 C iss 1,000 100 C oss 10 Crss 2 1 0 1 0 10 5 10 15 20 25 0 5 10 Fig. 11. Maximum Transient Thermal Impedance QG - NanoCoulombs 15 20 25 30 35 40 VDS - Volts Fig. 11. Maximum Transient Thermal Impedance aaaaa 3 Z (th)JC - K / W 1 0.1 0.01 0.00001 0.0001 0.001 0.01 Pulse Width - Seconds IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 0.1 1 10 IXTH1N200P3 Fig. 12. Forward-Bias Safe Operating Area Fig. 13. Forward-Bias Safe Operating Area o o @ TC = 25 C 10 IXTA1N200P3HV IXTH1N200P3HV @ TC = 75 C 10 o TJ = 150 C RDS(on) Limit o o 25μs 1 25μs I D - Amperes I D - Amperes o TC = 75 C Single Pulse 1 100μs 1ms 10ms 0.1 TJ = 150 C RDS(on) Limit TC = 25 C Single Pulse 100μs 1ms 0.1 10ms 100ms DC 100ms DC 0.01 0.01 100 1,000 VDS - Volts © 2017 IXYS CORPORATION, All Rights Reserved. 10,000 100 1,000 10,000 VDS - Volts IXYS REF: T_1N200P3(H3) 9-27-13 Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. 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