IXTH20N60

MegaMOSTMFET IXTH 20N60 IXTM 20N60 Obsolete: IXTM20N60 VDSS = 600 V = 20 A ID25 RDS(on) = 0.35 Ω N-Channel Enhancement Mode Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 600 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 600 V VGS Continuous ±20 V VGSM Transient ±30 V ID25 TC = 25°C 15 20 A A 15N60 20N60 IDM TC = 25°C, pulse width limited by TJM PD TC = 25°C 15N60 20N60 60 80 A A 300 W -55 ... +150 °C TJM 150 °C T stg -55 ... +150 °C Md . TJ Mounting torque TO-247 AD (IXTH) D (TAB) TO-204 AE (IXTM) Package unavailable D G = Gate, S = Source, TO-204 = 18 g, TO-247 = 6 g Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s °C 300 Features l l l l l Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. VDSS VGS = 0 V, ID = 250 µA 600 VGS(th) VDS = VGS, ID = 250 µA 2 IGSS VGS = ±20 VDC, VDS = 0 IDSS VDS = 0.8 • VDSS VGS = 0 V R DS(on) D = Drain, TAB = Drain 1.13/10 Nm/lb.in. Weight Symbol G TJ = 25°C TJ = 125°C VGS = 10 V, ID = 0.5 ID25 Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 % IXYS reserves the right to change limits, test conditions, and dimensions. © 2000 IXYS All rights reserved V 4.5 V ±100 nA 200 1 µA mA 0.35 Ω International standard packages Low RDS (on) HDMOSTM process Rugged polysilicon gate cell structure Low package inductance (< 5 nH) - easy to drive and to protect Fast switching times Applications l l l l Switch-mode and resonant-mode power supplies Motor control Uninterruptible Power Supplies (UPS) DC choppers Advantages l l l Easy to mount with 1 screw (TO-247) (isolated mounting screw hole) Space savings High power density 91537E(5/96) 1-4 IXTH 20N60 IXTM 20N60 Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. gfs VDS = 10 V; ID = 0.5 • ID25, pulse test 11 C iss C oss VGS = 0 V, VDS = 25 V, f = 1 MHz C rss t d(on) 18 S 4500 pF 420 pF 140 pF 20 40 ns tr VGS = 10 V, VDS = 0.5 • VDSS, ID = 0.5 ID25 43 60 ns td(off) RG = 2 Ω, (External) 70 90 ns 40 60 ns 150 170 nC 29 40 nC 60 85 nC tf Q g(on) Q gs VGS = 10 V, VDS = 0.5 • VDSS, ID = 0.5 ID25 Q gd R thJC 0.42 R thCK 0.25 Source-Drain Diode Symbol Test Conditions IS VGS = 0 V ISM K/W K/W Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. A Repetitive; 80 A VSD IF = IS, VGS = 0 V, Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 % 1.5 V t rr IF = IS, -di/dt = 100 A/µs, VR = 100 V 1 2 Terminals: 1 - Gate 3 - Source 3 2 - Drain Tab - Drain Dim. Millimeter Inches Min. Max. Min. Max. A 4.7 5.3 .185 .209 A1 2.2 2.54 .087 .102 A2 2.2 2.6 .059 .098 b 1.0 1.4 .040 .055 b1 1.65 2.13 .065 .084 b2 2.87 3.12 .113 .123 C .4 .8 .016 .031 D 20.80 21.46 .819 .845 E 15.75 16.26 .610 .640 e 5.20 5.72 0.205 0.225 L 19.81 20.32 .780 .800 L1 4.50 .177 ∅ P 3.55 3.65 .140 .144 Q 5.89 6.40 0.232 0.252 R 4.32 5.49 .170 .216 S 6.15 BSC 242 BSC . 20 TO-247 AD (IXTH) Outline TO-204AE (IXTM) Outline 600 ns Pins Dim. A A1 ∅b ∅D e e1 1 - Gate 2 - Source Case - Drain Millimeter Min. Max. 6.4 11.4 1.53 3.42 1.45 1.60 22.22 10.67 11.17 5.21 5.71 L 11.18 12.19 ∅ p 3.84 4.19 ∅p 1 3.84 4.19 q 30.15 BSC R 12.58 13.33 R1 3.33 4.77 s 16.64 17.14 © 2000 IXYS All rights reserved IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 Inches Min. Max. .250 .450 .060 .135 .057 .063 .875 .420 .440 .205 .225 .440 .151 .151 1.187 .495 .131 .655 .480 .165 .165 BSC .525 .188 .675 2-4 IXTH 20N60 IXTM 20N60 Fig. 1 Output Characteristics 40 VGS = 10V TJ = 25°C 40 Fig. 2 Input Admittance 30 20 ID - Amperes ID - Amperes 6V 30 5V TJ = 25°C 20 10 10 0 0 0 5 10 15 20 0 1 2 3 VDS - Volts 8 9 10 1.25 1.20 VGS = 10V 1.15 1.10 1.05 VGS = 15V 1.00 RDS(on) - Normalized 2.25 1.30 2.00 1.75 1.50 ID = 10A 1.25 1.00 0.75 0.95 0.90 0 5 10 15 20 25 30 35 0.50 -50 40 -25 0 ID - Amperes 25 50 75 Fig. 6 Temperature Dependence of Breakdown and Threshold Voltage 35 1.2 30 1.1 BV/VG(th) - Normalized VGS(th) 25 20 15 20N60 15N60 10 BVDSS 1.0 0.9 0.8 0.7 0.6 5 0 -50 100 125 150 TJ - Degrees C Fig. 5 Drain Current vs. Case Temperature ID - Amperes 7 2.50 . RDS(on) - Normalized 6 Fig. 4 Temperature Dependence of Drain to Source Resistance TJ = 25°C 1.35 5 VGS - Volts Fig. 3 RDS(on) vs. Drain Current 1.40 4 -25 0 25 50 75 TC - Degrees C © 2000 IXYS All rights reserved 100 125 150 0.5 -50 -25 0 25 50 75 100 125 150 TJ - Degrees C 3-4 IXTH 20N60 IXTM 20N60 Fig.7 Gate Charge Characteristic Curve Fig.8 Forward Bias Safe Operating Area 100 10 VDS = 300V ID = 20A IG = 10mA 9 8 100µs Limited by RDS(on) ID - Amperes 7 VGE - Volts 10µs 6 5 4 3 10 1ms 10ms 1 100ms 2 1 0 0.1 0 20 40 60 80 100 120 140 1 10 Gate Charge - nCoulombs VDS - Volts Fig.9 Capacitance Curves 4500 Fig.10 Source Current vs. Source to Drain Voltage 80 Ciss 4000 70 3500 60 ID - Amperes f = 1 MHz VDS = 25V 3000 2500 . Capacitance - pF 600 100 2000 1500 50 40 TJ = 125°C 30 TJ = 25°C 20 1000 Coss 500 10 Crss 0 0 5 10 15 20 0 0.00 25 0.25 VCE - Volts 0.50 0.75 1.00 1.25 1.50 VSD - Volts Fig.11 Transient Thermal Impedance Thermal Response - K/W 1 D=0.5 0.1 D=0.2 D=0.1 D=0.05 0.01 D=0.02 D=0.01 Single Pulse 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 Pulse Width - Seconds © 2000 IXYS All rights reserved 4-4 Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics.