IXTH20N65X2

IXTA20N65X2 IXTP20N65X2 IXTH20N65X2 X3-Class Power MOSFETTM N-Channel Enhancement Mode Avalanche Rated VDSS ID25 = 650V = 20A  185m RDS(on) TO-263 (IXTA) D G G S D (Tab) S TO-220 (IXTP) Symbol Test Conditions Maximum Ratings VDSS TJ = 25C to 150C 650 V VDGR TJ = 25C to 150C, RGS = 1M 650 V VGSS Continuous 30 V VGSM Transient 40 V ID25 TC = 25C 20 A IDM TC = 25C, Pulse Width Limited by TJM 22 A IA TC = 25C 5 A EAS TC = 25C 400 mJ dv/dt IS  IDM, VDD  VDSS, TJ  150°C 50 V/ns PD TC = 25C 290 W -55 ... +150 C TJM 150 C Tstg -55 ... +150 C 300 260 °C °C 10..65 / 2.2..14.6 1.13 / 10 N/lb Nm/lb.in 2.5 3.0 6.0 g g g TJ TL TSOLD Maximum Lead Temperature for Soldering 1.6 mm (0.062in.) from Case for 10s FC Md Mounting Force (TO-263) Mounting Torque (TO-220 & TO-247) Weight TO-263 TO-220 TO-247 G D S TO-247 (IXTH) G Characteristic Values Min. Typ. Max. BVDSS VGS = 0V, ID = 250µA 650 VGS(th) VDS = VGS, ID = 250µA 2.5 IGSS VGS = 30V, VDS = 0V IDSS VDS = VDSS, VGS = 0V 4.5     100 nA 5 50 TJ = 125C A A VGS = 10V, ID = 0.5 • ID25, Note 1 © 2020 IXYS CORPORATION, All Rights Reserved 155 185 m D = Drain Tab = Drain International Standard Packages Low RDS(ON) and QG Avalanche Rated Low Package Inductance High Power Density Easy to Mount Space Savings Applications      RDS(on) D (Tab) Advantages  V S Features  V D G = Gate S = Source  Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) D (Tab) Switch-Mode and Resonant-Mode Power Supplies DC-DC Converters PFC Circuits AC and DC Motor Drives Robotics and Servo Controls DS100868C(1/20) IXTA20N65X2 Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) gfs VDS = 10V, ID = 0.5 • ID25, Note 1 RGi Gate Input Resistance Characteristic Values Min. Typ. Max 11 Ciss Coss VGS = 0V, VDS = 25V, f = 1MHz td(on) tr td(off) tf S 3.7  1450 pF pF 1.4 pF 64 250 pF pF 19 ns 27 ns 47 ns 20 ns 27 nC 8 nC 11 nC Effective Output Capacitance Energy related Time related VGS = 0V VDS = 0.8 • VDSS Resistive Switching Times VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 RG = 10 (External) Qg(on) Qgs 18 1060 Crss Co(er) Co(tr) VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 Qgd 0.43 C/W RthJC RthCS IXTP20N65X2 IXTH20N65X2 TO-220 TO-247 0.50 0.21 C/W C/W Source-Drain Diode Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max IS VGS = 0V 20 A ISM Repetitive, Pulse Width Limited by TJM 80 A VSD IF = IS, VGS = 0V, Note 1 1.4 V trr QRM IRM IF = 10A, -di/dt = 100A/µs 350 4.3 24.6 VR = 100V ns C A Note 1. Pulse test, t  300s, duty cycle, d 2%. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,860,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123B1 6,306,728B1 6,404,065B1 6,534,343 6,583,505 6,683,344 6,710,405B2 6,710,463 6,727,585 7,005,734B2 6,759,692 7,063,975B2 6,771,478B2 7,071,537 7,157,338B2 IXTA20N65X2 Fig. 2. Extended Output Characteristics @ TJ = 25oC Fig. 1. Output Characteristics @ TJ = 25oC 20 45 VGS = 10V 8V 18 7V 35 14 8V 30 I D - Amperes I D - Amperes V GS = 10V 40 16 12 10 8 6V 7V 25 20 15 6 4 10 2 5 6V 5V 5V 0 0 0 0.5 1 1.5 2 2.5 3 3.5 4 0 5 10 VDS - Volts VGS = 10V 8V 3.8 7V 25 14 12 V GS = 10V 3.4 R DS(on) - Normalized 16 I D - Amperes 20 Fig. 4. RDS(on) Normalized to ID = 10A Value vs. Junction Temperature 4.2 20 18 15 VDS - Volts Fig. 3. Output Characteristics @ TJ = 125oC 6V 10 8 6 3.0 2.6 I D = 20A 2.2 1.8 I D = 10A 1.4 1.0 4 5V 2 0.6 0.2 0 0 4.5 1 2 3 4 5 6 7 8 9 10 -50 11 -25 0 25 50 75 100 125 VDS - Volts TJ - Degrees Centigrade Fig. 5. RDS(on) Normalized to ID = 10A Value vs. Drain Current Fig. 6. Normalized Breakdown & Threshold Voltages vs. Junction Temperature 1.3 VGS = 10V 150 1.2 BVDSS / VGS(th) - Normalized 4.0 3.5 RDS(on) - Normalized IXTP20N65X2 IXTH20N65X2 o TJ = 125 C 3.0 2.5 2.0 o 1.5 TJ = 25 C BVDSS 1.1 1.0 0.9 0.8 VGS(th) 0.7 1.0 0.6 0.5 0 5 10 15 20 25 I D - Amperes © 2020 IXYS CORPORATION, All Rights Reserved 30 35 40 -60 -40 -20 0 20 40 60 80 T J - Degrees Centigrade 100 120 140 160 IXTA20N65X2 Fig. 7. Maximum Drain Current vs. Case Temperature IXTP20N65X2 IXTH20N65X2 Fig. 8. Input Admittance 30 22 20 V DS = 10V 25 18 20 14 I D - Amperes I D - Amperes 16 12 10 8 15 o TJ = 125 C 10 o 25 C 6 o - 40 C 4 5 2 0 0 -50 -25 0 25 50 75 100 125 3.5 150 4.0 4.5 5.0 TC - Degrees Centigrade 5.5 6.0 6.5 7.0 7.5 VGS - Volts Fig. 9. Transconductance Fig. 10. Forward Voltage Drop of Intrinsic Diode 35 100 o 90 TJ = - 40 C VDS = 10V 30 80 70 o 25 C I S - Amperes g f s - Siemens 25 20 15 o 125 C 60 50 40 o TJ = 125 C 30 10 o TJ = 25 C 20 5 10 0 0 0 5 10 15 20 25 30 0.4 0.5 0.6 0.7 0.9 1.0 1.1 1.2 Fig. 12. Capacitance Fig. 11. Gate Charge 10,000 9 VDS = 325V 8 I D = 10A Capacitance - PicoFarads 10 I G = 10mA 7 V GS - Volts 0.8 VSD - Volts I D - Amperes 6 5 4 3 2 1,000 C iss 100 Coss 10 1 C rss f = 1 MHz 1 0 0 0 4 8 12 16 20 24 28 QG - NanoCoulombs IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 1 10 100 VDS - Volts 1,000 IXTA20N65X2 Fig. 14. Forward-Bias Safe Operating Area Fig. 13. Output Capacitance Stored Energy 100 14 RDS(on) Limit 12 100µs 10 10 I D - Amperes EOSS - MicroJoules IXTP20N65X2 IXTH20N65X2 8 6 1 1ms 4 o 0.1 TJ = 150 C o DC TC = 25 C Single Pulse 2 0 10ms 0.01 0 100 200 300 400 500 600 1 10 100 1,000 VDS - Volts V DS - Volts Fig. 15. Maximum Transient Thermal Impedance 1 Z(th)JC - K / W 0.1 0.01 0.001 0.00001 0.0001 0.001 0.01 Pulse Width - Second © 2020 IXYS CORPORATION, All Rights Reserved 0.1 1 IXTA20N65X2 IXTP20N65X2 IXTH20N65X2 TO-263 Outline 1 - Gate 2,4 - Drain 3 - Source TO-220 Outline 1 - Gate 2,4 - Drain 3 - Source TO-247 Outline 1 - Gate 2,4 - Drain 3 - Source IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS REF: T_20N65X2(Y4-S602) 12-12-17 IXTA20N65X2 IXTP20N65X2 IXTH20N65X2 Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics. © 2020 IXYS CORPORATION, All Rights Reserved