IXTH21N50

MegaMOSTMFET VDSS IXTH / IXTM 21N50 IXTH / IXTM 24N50 500 V 500 V ID25 RDS(on) 21 A 0.25 Ω 24 A 0.23 Ω N-Channel Enhancement Mode Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C VDGR TJ = 25°C to 150°C; RGS = 1 MΩ VGS Continuous VGSM Transient ID25 TC = 25°C IDM TC = 25°C, pulse width limited by TJM PD TC = 25°C TJM 21N50 24N50 V 500 V ±20 V ±30 V 21 24 A A 84 96 A A 300 W -55 ... +150 °C 150 °C -55 ... +150 °C O T stg Mounting torque Weight 500 D G = Gate, S = Source, G D = Drain, TAB = Drain 1.13/10 Nm/lb.in. TO-204 = 18 g, TO-247 = 6 g °C 300 BS Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s Test Conditions O Symbol D (TAB) TO-204 AE (IXTM) LE 21N50 24N50 TJ Md TO-247 AD (IXTH) TE Symbol l l l l l Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. VDSS VGS = 0 V, ID = 250 µA 500 VGS(th) VDS = VGS, ID = 250 µA 2 IGSS VGS = ±20 VDC, VDS = 0 IDSS VDS = 0.8 • VDSS VGS = 0 V R DS(on) VGS = 10 V, ID = 0.5 ID25 TJ = 25°C TJ = 125°C 21N50 24N50 Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 % IXYS reserves the right to change limits, test conditions, and dimensions. © 2000 IXYS All rights reserved Features V 4 V ±100 nA 200 1 µA mA 0.25 0.23 Ω Ω International standard packages Low RDS (on) HDMOSTM process Rugged polysilicon gate cell structure Low package inductance (< 5 nH) - easy to drive and to protect Fast switching times Applications l l l l Switch-mode and resonant-mode power supplies Motor controls Uninterruptible Power Supplies (UPS) DC choppers Advantages l l l Easy to mount with 1 screw (TO-247) (isolated mounting screw hole) Space savings High power density 91536F(5/97) 1-4 IXTH 21N50 IXTM 21N50 Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. gfs VDS = 10 V; ID = 0.5 • ID25, pulse test 11 C iss C oss VGS = 0 V, VDS = 25 V, f = 1 MHz C rss S 4200 pF 450 pF 135 pF 24 30 ns tr VGS = 10 V, VDS = 0.5 • VDSS, ID = 0.5 ID25 33 45 ns td(off) RG = 2 Ω, (External) 65 80 ns 30 40 ns 160 190 nC 28 40 nC 75 85 nC tf Q g(on) Q gs VGS = 10 V, VDS = 0.5 • VDSS, ID = 0.5 ID25 Q gd R thJC 0.42 R thCK Test Conditions IS VGS = 0 ISM Repetitive; pulse width limited by TJM VSD IF = IS, VGS = 0 V, Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 % A A 21N50 24N50 84 96 A A 1.5 V O 21 24 BS O 3 2 - Drain Tab - Drain Dim. K/W 21N50 24N50 IF = IS, -di/dt = 100 A/µs, VR = 100 V 2 Terminals: 1 - Gate 3 - Source K/W Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. Symbol t rr 1 LE 0.25 Source-Drain Diode TO-247 AD (IXTH) Outline TE t d(on) 21 IXTH 24N50 IXTM 24N50 600 Millimeter Inches Min. Max. Min. Max. A 4.7 5.3 .185 .209 A1 2.2 2.54 .087 .102 A2 2.2 2.6 .059 .098 b 1.0 1.4 .040 .055 b1 1.65 2.13 .065 .084 b2 2.87 3.12 .113 .123 C .4 .8 .016 .031 D 20.80 21.46 .819 .845 E 15.75 16.26 .610 .640 e 5.20 5.72 0.205 0.225 L 19.81 20.32 .780 .800 L1 4.50 .177 ∅ P 3.55 3.65 .140 .144 Q 5.89 6.40 0.232 0.252 R 4.32 5.49 .170 .216 S 6.15 BSC 242 BSC TO-204 AE(IXTM) Outline ns Pins Dim. A A1 ∅b ∅D e e1 1 - Gate 2 - Source Case - Drain Millimeter Min. Max. 6.4 11.4 1.53 3.42 1.45 1.60 22.22 10.67 11.17 5.21 5.71 L 11.18 12.19 ∅ p 3.84 4.19 ∅p 1 3.84 4.19 q 30.15 BSC R 12.58 13.33 R1 3.33 4.77 s 16.64 17.14 © 2000 IXYS All rights reserved IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 Inches Min. Max. .250 .450 .060 .135 .057 .063 .875 .420 .440 .205 .225 .440 .151 .151 1.187 .495 .131 .655 .480 .165 .165 BSC .525 .188 .675 2-4 IXTH 21N50 IXTM 21N50 Fig. 1 Output Characteristics 50 7V 45 6V TJ = 25°C 40 40 ID - Amperes 35 30 25 20 5V 15 30 25 TJ = 25°C 20 15 TE 5 5 0 0 0 5 10 15 20 25 30 35 VDS - Volts 0 1 2 3 6 7 8 9 10 2.50 TJ = 25°C 2.25 1.5 1.4 1.3 VGS = 10V O 1.2 VGS = 15V 1.1 1.0 0 5 2.00 1.75 1.50 1.00 0.50 -50 10 15 20 25 30 35 40 45 50 -25 0 ID - Amperes O 25 50 75 100 125 150 TJ - Degrees C Fig. 5 Drain Current vs. Case Temperature Fig. 6 Temperature Dependence of Breakdown and Threshold Voltage 1.2 VGS(th) BVCES 1.1 BV/VG(th) - Normalized 30 24N50 20 ID = 12A 1.25 0.75 BS 0.9 ID - Amperes 5 Fig. 4 Temperature Dependence of Drain to Source Resistance LE 1.6 4 VGS - Volts Fig. 3 RDS(on) vs. Drain Current RDS(on) - Normalized 35 10 10 RDS(on) - Normalized ID - Amperes Fig. 2 Input Admittance 50 VGS = 10V 45 IXTH 24N50 IXTM 24N50 21N50 10 1.0 0.9 0.8 0.7 0.6 0 -50 -25 0 25 50 75 TC - Degrees C © 2000 IXYS All rights reserved 100 125 150 0.5 -50 -25 0 25 50 75 100 125 150 TJ - Degrees C 3-4 IXTH 21N50 IXTM 21N50 Fig.7 Gate Charge Characteristic Curve Fig.8 Forward Bias Safe Operating Area 10 100 VDS = 250V 9 IG = 10mA 100µs ID - Amperes 6 5 4 3 10 1ms 10ms 1 100ms TE 2 1 0 0.1 0 25 50 75 100 125 150 175 200 1 Gate Charge - nCoulombs 10 100 500 VDS - Volts Fig.10 Source Current vs. Source to Drain Voltage LE Fig.9 Capacitance Curves 50 4500 45 Ciss 4000 40 3500 3000 f = 1 Mhz VDS = 25V 2500 O 2000 1500 1000 ID - Amperes VGE - Volts 7 Capacitance - pF 10µs Limited by RDS(on) ID = 12.5A 8 IXTH 24N50 IXTM 24N50 Coss 500 Crss BS 0 0 5 10 15 20 25 35 30 25 20 TJ = 125°C 15 TJ = 25°C 10 5 0 0.00 0.25 VDS - Volts 0.50 0.75 1.00 1.25 1.50 VSD - Volt Fig.11 Transient Thermal Impedance Thermal Response - K/W O 1 D=0.5 0.1 D=0.2 D=0.1 D=0.05 0.01 D=0.02 D=0.01 Single pulse 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 Time - Seconds © 2000 IXYS All rights reserved 4-4 Disclaimer Notice - Information furnished is believed to be accurate and reliable. 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