IXTH24N65X2

IXTA24N65X2 IXTP24N65X2 IXTH24N65X2 X2-Class Power MOSFET VDSS ID25 = 650V = 24A  145m  RDS(on) N-Channel Enhancement Mode Avalanche Rated TO-263 (IXTA) G S D (Tab) Symbol Test Conditions VDSS TJ = 25C to 150C Maximum Ratings 650 V VDGR TJ = 25C to 150C, RGS = 1M 650 V VGSS Continuous 30 V VGSM Transient 40 V ID25 TC = 25C 24 A IDM TC = 25C, Pulse Width Limited by TJM 48 A IA TC = 25C 12 A EAS TC = 25C 600 mJ dv/dt IS  IDM, VDD  VDSS, TJ  150°C 15 V/ns PD TC = 25C 390 W -55 ... +150 C TJ TJM 150 C Tstg -55 ... +150 C 300 260 °C °C 10..65 / 2.2..14.6 1.13 / 10 N/lb Nm/lb.in 2.5 3.0 6.0 g g g TL TSOLD Maximum Lead Temperature for Soldering 1.6 mm (0.062in.) from Case for 10s FC Md Mounting Force (TO-263) Mounting Torque (TO-220 & TO-247) Weight TO-263 TO-220 TO-247 TO-220 (IXTP) G D S D (Tab) TO-247 (IXTH) G D S G = Gate S = Source D (Tab) D = Drain Tab = Drain Features     International Standard Packages Low RDS(ON) and QG Avalanche Rated Low Package Inductance Advantages Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max. BVDSS VGS = 0V, ID = 250μA 650 VGS(th) VDS = VGS, ID = 250μA 3.0 IGSS VGS = 30V, VDS = 0V IDSS VDS = VDSS, VGS = 0V RDS(on) VGS = 10V, ID = 0.5 • ID25, Note 1   V 5.0 V 100 nA TJ = 125C 5 100  A μA Applications   145 m    ©2019 IXYS CORPORATION, All Rights Reserved High Power Density Easy to Mount Space Savings Switch-Mode and Resonant-Mode Power Supplies DC-DC Converters PFC Circuits AC and DC Motor Drives Robotics and Servo Controls DS100689D(6/19) IXTA24N65X2 Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) gfs VDS = 10V, ID = 0.5 • ID25, Note 1 RGi Gate Input Resistance Characteristic Values Min. Typ. Max 13 Ciss Coss VGS = 0V, VDS = 25V, f = 1MHz 22 S 1.1  2060 pF 1470 pF 1.2 pF 83 336 pF pF 20 ns 25 ns 50 ns 19 ns 36 nC 9 nC 13 nC Crss Co(er) Co(tr) Effective Output Capacitance VGS = 0V Energy related VDS = 0.8 • VDSS Time related td(on) Resistive Switching Times tr td(off) tf VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 RG = 10 (External) Qg(on) Qgs VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 Qgd 0.32 C/W RthJC RthCS IXTP24N65X2 IXTH24N65X2 TO-220 TO-247 C/W C/W 0.50 0.21 Source-Drain Diode Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max IS VGS = 0V 24 A ISM Repetitive, pulse Width Limited by TJM 96 A VSD IF = IS, VGS = 0V, Note 1 1.4 V trr QRM IRM IF = 12A, -di/dt = 100A/μs 390 3.3 17 ns μC A 6,162,665 6,259,123B1 6,306,728B1 6,404,065B1 6,534,343 6,583,505 VR = 100V Note 1. Pulse test, t  300s, duty cycle, d 2%. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,860,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,683,344 6,710,405B2 6,710,463 6,727,585 7,005,734B2 6,759,692 7,063,975B2 6,771,478B2 7,071,537 7,157,338B2 IXTA24N65X2 IXTP24N65X2 IXTH24N65X2 o o Fig. 2. Extended Output Characteristics @ TJ = 25 C Fig. 1. Output Characteristics @ TJ = 25 C 24 VGS = 10V 8V VGS = 10V 50 20 8V 7V 40 I D - Amperes I D - Amperes 16 12 6V 8 7V 30 20 6V 10 4 5V 5V 0 0 0 0.5 1 1.5 2 2.5 3 0 3.5 5 10 15 VDS - Volts 25 30 Fig. 4. RDS(on) Normalized to ID = 12A Value vs. Junction Temperature o Fig. 3. Output Characteristics @ TJ = 125 C 24 3.8 VGS = 10V VGS = 10V 3.4 20 7V RDS(on) - Normalized 3.0 16 I D - Amperes 20 VDS - Volts 6V 12 8 2.6 I D = 24A 2.2 1.8 I D = 12A 1.4 1.0 4 5V 0.6 4V 0.2 0 0 4.6 1 2 3 4 5 6 8 -50 9 -25 0 25 50 75 100 125 VDS - Volts TJ - Degrees Centigrade Fig. 5. RDS(on) Normalized to ID = 12A Value vs. Drain Current Fig. 6. Normalized Breakdown & Threshold Voltages vs. Junction Temperature 1.2 150 VGS = 10V 4.2 BVDSS BVDSS / VGS(th) - Normalized 1.1 3.8 RDS(on) - Normalized 7 o TJ = 125 C 3.4 3.0 2.6 2.2 o 1.8 TJ = 25 C 1.4 1.0 0.9 VGS(th) 0.8 0.7 1.0 0.6 0.6 0 5 10 15 20 25 30 35 I D - Amperes ©2019 IXYS CORPORATION, All Rights Reserved 40 45 50 55 -60 -40 -20 0 20 40 60 80 TJ - Degrees Centigrade 100 120 140 160 IXTA24N65X2 IXTP24N65X2 IXTH24N65X2 Fig. 8. Input Admittance Fig. 7. Maximum Drain Current vs. Case Temperature 36 28 32 24 28 20 I D - Amperes I D - Amperes 24 16 12 o TJ = 125 C 20 o 25 C o - 40 C 16 12 8 8 4 4 0 0 -50 -25 0 25 50 75 100 125 150 3.5 4.0 4.5 5.0 TC - Degrees Centigrade 6.5 7.0 7.5 80 40 o TJ = - 40 C 70 35 60 30 o 25 C I S - Amperes g f s - Siemens 6.0 Fig. 10. Forward Voltage Drop of Intrinsic Diode Fig. 9. Transconductance 45 25 o 125 C 20 15 50 40 o TJ = 125 C 30 10 20 5 10 0 o TJ = 25 C 0 0 5 10 15 20 25 30 35 40 0.4 0.5 0.6 0.7 I D - Amperes 0.8 0.9 1.0 1.1 VSD - Volts Fig. 11. Gate Charge Fig. 12. Capacitance 10 100000 f = 1 MHz VDS = 325V I D = 12A 8 10000 I G = 10mA Capacitance - PicoFarads VGS - Volts 5.5 VGS - Volts 6 4 2 1000 C iss 100 C oss 10 1 C rss 0 0.1 0 4 8 12 16 20 24 28 32 36 QG - NanoCoulombs IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 1 10 100 VDS - Volts 1000 IXTA24N65X2 Fig. 14. Forward-Bias Safe Operating Area Fig. 13. Output Capacitance Stored Energy 100 18 RDS(on) Limit 16 14 25μs 10 100μs 12 I D - Amperes EOSS - MicroJoules IXTP24N65X2 IXTH24N65X2 10 8 1 1ms 6 0.1 4 10ms o TJ = 150 C o TC = 25 C Single Pulse 2 0.01 0 0 100 200 300 400 500 10 600 100 1,000 VDS - Volts VDS - Volts Fig. 15. Maximum Transient Thermal Impedance 1 D = 0.5 0.1 Z(th)JC - K / W D = 0.2 D = 0.1 D = 0.05 0.01 D = tp / T D = 0.02 tp D = 0.01 T Single Pulse 0.001 1.E-06 1.E-05 1.E-04 1.E-03 1.E-02 1.E-01 1.E+00 Pulse Width - Second ©2019 IXYS CORPORATION, All Rights Reserved IXYS REF: T_24N65X2(X4-S602) 6-25-19-A IXTA24N65X2 TO-263 Outline 1 - Gate 2,4 - Drain 3 - Source TO-220 Outline 1 - Gate 2,4 - Drain 3 - Source TO-247 Outline 1 - Gate 2,4 - Drain 3 - Source IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXTP24N65X2 IXTH24N65X2 IXTA24N65X2 IXTP24N65X2 IXTH24N65X2 Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. 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