IXTH24P20

Standard Power MOSFET IXTH 24P20 IXTT 24P20 P-Channel Enhancement Mode Avalanche Rated Test Conditions VDSS TJ = 25°C to 150°C -200 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ -200 V VGS Continuous ±20 V VGSM Transient ±30 V Maximum Ratings A ID25 TC = 25°C -24 IDM TC = 25°C, pulse width limited by TJ -96 A IAR TC = 25°C -24 A EAR TC = 25°C 30 mJ PD TC = 25°C 300 W -55 ... +150 °C TJM 150 °C Tstg -55 ... +150 °C 400 °C 250 °C Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s Plastic Body for 10s Md Mounting torque (TO-247) Weight TO-247 TO-268 1.13/10 Nm/lb.in. 6 5 Symbol Test Conditions VDSS V GS = 0 V, ID = -250 µA -200 VGS(th) V DS = VGS, ID = -250 µA -3.0 IGSS V GS = ±20 VDC, VDS = 0 IDSS V DS = 0.8 • VDSS V GS = 0 V RDS(on) VGS = -10 V, ID = 0.5 • ID25 g g Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. TJ = 25°C TJ = 125°C V -5.0 V ±100 nA -25 -1 µA mA 0.15 Ω TO-247 (IXTH) D (TAB) TO-268 (IXTT) G S G = Gate, S = Source, D (TAB) D = Drain, TAB = Drain Features • International standard packages • • • • Low RDS (on) HDMOSTM process Rugged polysilicon gate cell structure Unclamped Inductive Switching (UIS) rated Low package inductance (