IXTH270N04T4

Preliminary Technical Information IXTP270N04T4 IXTH270N04T4 TrenchT4TM Power MOSFET VDSS ID25 = 40V = 270A   2.4m RDS(on) N-Channel Enhancement Mode Avalanche Rated TO-220AB (IXTP) G Symbol Test Conditions Maximum Ratings VDSS TJ = 25C to 175C 40 V VDGR TJ = 25C to 175C, RGS = 1M 40 V VGSM Transient 15 V ID25 TC = 25C 270 A ILRMS Lead Current Limit, RMS 160 A IDM TC = 25C, Pulse Width Limited by TJM 800 A IA TC = 25C 135 A EAS TC = 25C 750 mJ IA TC = 25C 270 A EAS TC = 25C 350 mJ PD TC = 25C 375 W G  TJM 175  C  Tstg -55 ... +175  C  Md Mounting Torque Weight TO-220 TO-247 300 260 °C °C 1.13 / 10 Nm/lb.in 3 6 g g     Characteristic Values Min. Typ. Max. BVDSS VGS = 0V, ID = 250A 40 VGS(th) VDS = VGS, ID = 250A 2.0 IGSS VGS = 15V, VDS = 0V IDSS VDS = VDSS, VGS = 0V 4.0 V             200 nA 5 TJ = 150C RDS(on) V VGS = 10V, ID = 50A, Note 1 © 2016 IXYS CORPORATION, All Rights Reserved A 750  A 2.4 m D (Tab) D = Drain Tab = Drain International Standard Packages 175°C Operating Temperature High Current Handling Capability Avalanche Rated Low RDS(on) Advantages  Symbol Test Conditions (TJ = 25C Unless Otherwise Specified) S Features C Maximum Lead Temperature for Soldering 1.6 mm (0.062in.) from Case for 10s D G = Gate S = Source  TL TSOLD D (Tab) TO-247 (IXTH) -55 ... +175 TJ DS Easy to Mount Space Savings High Power Density Applications • Synchronous Buck Converters • High Current Switching Power Supplies • Battery Powered Electric Motors • Resonant-Mode Power Supplies • Electronics Ballast Application • Class D Audio Amplifiers DS100671B(03/16) IXTP270N04T4 IXTH270N04T4 Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max. gfs VDS = 10V, ID = 60A, Note 1 90 RGi Gate Input Resistance Ciss Coss VGS = 0V, VDS = 25V, f = 1MHz 150 S 1.4  9140 pF 1450 pF 980 pF 18 ns 28 ns 72 ns 23 ns 182 nC 45 nC 67 nC 0.50 0.21 0.40 C/W C/W C/W Crss td(on) tr td(off) tf Resistive Switching Times VGS = 10V, VDS = 0.5 • VDSS, ID = 135A RG = 2 (External) Qg(on) Qgs VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 Qgd RthJC RthCS TO-220 TO-247 Source-Drain Diode Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max. IS VGS = 0V ISM Repetitive, Pulse width limited by TJM VSD IF = 100A, VGS = 0V, Note 1 trr IF = 150A, VGS = 0V IRM QRM -di/dt = 100A/s VR = 30V 270 A 1080 A 1.4 V 48 ns 1.8 A 43 nC Notes: 1. Pulse test, t  300s, duty cycle, d  2%. 2. On through-hole packages, RDS(on) Kelvin test contact location must be 5mm or less from the package body. PRELIMINARY TECHNICAL INFORMATION The product presented herein is under development. The Technical Specifications offered are derived from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a "considered reflection" of the anticipated result. IXYS reserves the right to change limits, test conditions, and dimensions without notice. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,860,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 IXTP270N04T4 IXTH270N04T4 Fig. 1. Output Characteristics @ TJ = 25ºC Fig. 2. Extended Output Characteristics @ TJ = 25ºC 350 350 VGS = 15V 10V 300 VGS = 10V 250 250 I D - Amperes I D - Amperes 8V 300 9V 8V 200 150 200 7V 150 7V 100 100 50 50 6V 6V 0 0 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 0 1 1 2 3 4 5 6 8 9 VDS - Volts Fig. 3. Output Characteristics @ TJ = 150ºC Fig. 4. Normalized RDS(on) to ID = 135A Value vs. Junction Temperature 1.8 300 VGS = 15V 10V 9V 250 10 VGS = 10V 1.6 R DS(on) - Normalized 8V I D - Amperes 7 VDS - Volts 200 7V 150 100 6V ID = 270A 1.4 ID = 135A 1.2 1.0 0.8 50 5V 0 0.6 0 0.2 0.4 0.6 0.8 1 1.2 -50 -25 0 VDS - Volts 75 100 125 150 175 Fig. 6. Drain Current vs. Case Temperature 180 VGS = 10V 15V 1.8 50 TJ - Degrees Centigrade Fig. 5. Normalized RDS(on) to ID = 135A vs. Drain Current 2.0 25 160 External Lead Current Limit TJ = 175ºC 120 1.6 I D - Amperes RDS(on) - Normalized 140 1.4 1.2 TJ = 25ºC 100 80 60 40 1.0 20 0 0.8 0 50 100 150 200 I D - Amperes © 2016 IXYS CORPORATION, All Rights Reserved 250 300 350 -50 -25 0 25 50 75 100 TC - Degrees Centigrade 125 150 175 IXTP270N04T4 IXTH270N04T4 Fig. 7. Input Admittance Fig. 8. Transconductance 240 500 VDS = 10V TJ = - 40ºC 400 350 g f s - Siemens 160 I D - Amperes VDS = 10V 450 200 120 TJ = 150ºC 25ºC 80 25ºC 300 250 150ºC 200 150 - 40ºC 100 40 50 0 0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5 0 20 40 60 80 100 VGS - Volts Fig. 9. Forward Voltage Drop of Intrinsic Diode 140 160 180 200 220 240 Fig. 10. Gate Charge 300 10 VDS = 20V 9 250 I D = 135A 8 I G = 10mA 7 V GS - Volts 200 I S - Amperes 120 I D - Amperes 150 TJ = 150ºC 100 6 5 4 3 TJ = 25ºC 2 50 1 0 0 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4 0 20 40 60 80 100 120 140 160 Fig. 12. Forward-Bias Safe Operating Area Fig. 11. Capacitance 1,000 100,000 25µs f = 1 MHz RDS(on) Limit C iss 100µs 100 10,000 I D - Amperes Capacitance - PicoFarads 180 QG - NanoCoulombs VSD - Volts Coss External Lead Current Limit 10 1,000 Crss TJ = 175ºC TC = 25ºC Single Pulse DC 1ms 10ms 1 100 0 5 10 15 20 25 30 35 40 VDS - Volts IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 0 1 10 VDS - Volts 100 IXTP270N04T4 IXTH270N04T4 Fig. 13. Resistive Turn-on Rise Time vs. Junction Temperature 34 33 RG = 2Ω , VGS = 10V 33 RG = 2Ω , VGS = 10V 32 VDS = 20V VDS = 20V TJ = 150ºC I D = 270A 32 31 t r - Nanoseconds t r - Nanoseconds Fig. 14. Resistive Turn-on Rise Time vs. Drain Current 31 30 I D = 135A 29 30 29 TJ = 25ºC 28 28 27 27 26 26 25 50 75 100 125 150 120 140 160 180 TJ - Degrees Centigrade Fig. 15. Resistive Turn-on Switching Times vs. Gate Resistance 300 tr 250 70 30 50 20 0 7 9 11 13 VDS = 20V 75 28 70 I D = 135A, 270A 26 65 24 60 22 55 25 15 50 75 100 50 150 125 TJ - Degrees Centigrade Fig. 17. Resistive Turn-off Switching Times vs. Drain Current Fig. 18. Resistive Turn-off Switching Times vs. Gate Resistance tf td(off) RG = 2Ω, VGS = 10V 28 70 26 65 24 60 TJ = 25ºC 22 300 td(off) TJ = 150ºC, VGS = 10V 160 75 TJ = 150ºC tf 80 240 VDS = 20V t d(off) - Nanoseconds 30 200 I D = 135A 120 180 I D = 270A 80 120 40 60 55 20 120 140 160 180 200 220 240 I D - Amperes © 2016 IXYS CORPORATION, All Rights Reserved 260 50 280 0 0 1 3 5 7 9 RG - Ohms 11 13 15 t d(off) - Nanoseconds VDS = 20V 85 85 80 RG - Ohms 32 280 td(off) 20 10 34 t f - Nanoseconds t f - Nanoseconds 100 5 260 RG = 2Ω, VGS = 10V 30 t f - Nanoseconds t r - Nanoseconds 40 I D = 270A, 135A 3 240 t d(off) - Nanoseconds 50 t d(on) - Nanoseconds 200 tf 32 60 VDS = 20V 1 220 Fig. 16. Resistive Turn-off Switching Times vs. Junction Temperature 34 td(on) TJ = 150ºC, VGS = 10V 150 200 I D - Amperes IXTP270N04T4 IXTH270N04T4 Fig. 19. Maximum Transient Thermal Impedance 1 Z(th)JC - K / W 0.1 0.01 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 Pulse Width - Seconds TO-220 (IXTH) Outline TO-220 (IXTP) Outline A E E A A1 0P A2 E2/2 Q R 0P U H1 Q S E2 D T (D2) D 4 D1 1 2 1 4 3 3 L1 A2 EJECTOR PIN 2 (E1) L L1 L b2 e c e1 3X b 3X b2 1 = Gate 2,4 = Drain 3 = Source b4 b e c A1 W 1 = Gate 2,4 = Drain 3 = Source BOTTOM FLATNESS IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS REF: T_270N04T4(T5-M03) 1-28-16 Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. 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