IXTH2N150L

Advance Technical Information LinearTM Power MOSFET w/Extended FBSOA IXTH2N150L VDSS ID25 = 1500V = 2A  15  RDS(on) N-Channel Enhancement Mode Guaranteed FBSOA Avalanche Rated TO-247 G Symbol Test Conditions Maximum Ratings VDSS TJ = 25C to 150C 1500 V VDGR TJ = 25C to 150C, RGS = 1M 1500 V VGSS Continuous 30 V VGSM Transient 40 V ID25 TC = 25C 2 A IDM TC = 25C, Pulse Width Limited by TJM 6 A PD TC = 25C 290 W -55 to +150 C TJ +150 C  -55 to +150 C  300 260 °C °C  1.13 / 10 Nm/lb.in 6 g Md Mounting Torque (TO-247) Weight D = Drain Tab = Drain Features TJM Maximum Lead Temperature for Soldering Plastic Body for 10s (Tab) S G = Gate S = Source Tstg TL TSOLD D  Designed for Linear Operation International Standard Package Avalanche Rated Guaranteed FBSOA at 75C Advantages    Easy to Mount Space Savings High Power Density Applications   Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) BVDSS VGS = 0V, ID = 250A 1500 VGS(th) VDS = VGS, ID = 250A 6.0 IGSS VGS = 30V, VDS = 0V IDSS VDS = VDSS, VGS = 0V TJ = 125C RDS(on)  Characteristic Values Min. Typ. Max. VGS = 20V, ID = 0.5 • ID25, Note 1 © 2013 IXYS CORPORATION, All Rights Reserved  V 8.5 V 100 nA 15 A   DC Choppers DC-DC Converters Battery Chagers Programmable Loads Current Regulators Temperature and Lighting Controls 150 A 15  DS100584(12/13) IXTH2N150L Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max. gfs 0.4 VDS = 20V, ID = 0.5 • ID25, Note 1 Ciss Coss VGS = 0V, VDS = 25V, f = 1MHz Crss td(on) tr td(off) tf Resistive Switching Times VGS = 15V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 RG =10 (External) Qg(on) Qgs VGS = 20V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 Qgd TO-247 Outline 0.7 S 1470 pF 92 pF 30 pF 33 ns 55 ns 85 ns 84 ns 72 nC 15 nC 30 nC 0.43 C/W RthJC RthCS C/W 0.21 Safe Operating Area Specification Characteristic Values Min. Typ. Max. Symbol Test Conditions SOA VDS = 1200V, ID = 0.10A, TC = 75°C, Tp = 5s 120 W 1 2 P 3 e Terminals: 1 - Gate 3 - Source Dim. Millimeter Min. Max. A 4.7 5.3 2.2 2.54 A1 A2 2.2 2.6 b 1.0 1.4 b1 1.65 2.13 b2 2.87 3.12 C .4 .8 D 20.80 21.46 E 15.75 16.26 e 5.20 5.72 L 19.81 20.32 L1 4.50 P 3.55 3.65 Q 5.89 6.40 R 4.32 5.49 S 6.15 BSC 2 - Drain Inches Min. Max. .185 .209 .087 .102 .059 .098 .040 .055 .065 .084 .113 .123 .016 .031 .819 .845 .610 .640 0.205 0.225 .780 .800 .177 .140 .144 0.232 0.252 .170 .216 242 BSC Source-Drain Diode Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max. IS VGS = 0V 2 A ISM Repetitive, Pulse Width Limited by TJM 8 A VSD IF = IS, VGS = 0V, Note 1 1.5 V trr IRM QRM IF = 2A, -di/dt = 100A/s, VR = 100V, VGS = 0V 1.86 24 22 μs A μC Note 1. Pulse test, t  300s, duty cycle, d 2%. ADVANCE TECHNICAL INFORMATION The product presented herein is under development. The Technical Specifications offered are derived from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a "considered reflection" of the anticipated result. IXYS reserves the right to change limits, test conditions, and dimensions without notice. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,860,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 IXTH2N150L Fig. 2. Output Characteristics @ TJ = 125ºC Fig. 1. Output Characteristics @ TJ = 25ºC 3 2 VGS = 20V 1.8 VGS = 20V 2.5 1.6 13V 1.4 1.5 I D - Amperes I D - Amperes 2 12V 1 11V 10V 1.2 1 0.8 9V 0.6 0.4 0.5 8V 10V 0.2 9V 0 7V 0 0 10 20 30 40 50 60 70 80 0 10 20 30 40 50 60 70 VDS - Volts VDS - Volts Fig. 3. RDS(on) Normalized to ID = 1A Value vs. Junction Temperature Fig. 4. RDS(on) Normalized to ID = 1A Value vs. Drain Current 3.8 3.0 80 VGS = 20V 3.4 VGS = 20V 2.6 TJ = 125ºC 2.6 RDS(on) - Normalized RDS(on) - Normalized 3.0 I D = 2A 2.2 I D = 1A 1.8 1.4 2.2 1.8 1.4 TJ = 25ºC 1.0 1.0 0.6 0.6 0.2 -50 -25 0 25 50 75 100 125 0 150 0.5 1 1.5 2 2.5 3 I D - Amperes TJ - Degrees Centigrade Fig. 5. Maximum Drain Current vs. Case Temperature Fig. 6. Input Admittance 3 2 2.5 1.6 I D - Amperes I D - Amperes 2 1.2 0.8 TJ = 125ºC 25ºC - 40ºC 1.5 1 0.4 0.5 0 0 -50 -25 0 25 50 75 TC - Degrees Centigrade © 2013 IXYS CORPORATION, All Rights Reserved 100 125 150 6 7 8 9 10 VGS - Volts 11 12 13 14 IXTH2N150L Fig. 8. Forward Voltage Drop of Intrinsic Diode Fig. 7. Transconductance 1.6 6 TJ = - 40ºC 1.4 5 4 25ºC 1.0 I S - Amperes g f s - Siemens 1.2 125ºC 0.8 0.6 3 TJ = 125ºC TJ = 25ºC 2 0.4 1 0.2 0 0.0 0 0.5 1 1.5 2 2.5 0.3 3 0.4 0.5 0.6 0.7 0.9 1.0 1.1 1.2 Fig. 10. Capacitance Fig. 9. Gate Charge 20 10,000 18 f = 1 MHz VDS = 750V Capacitance - PicoFarads I D = 1A 16 I G = 10mA 14 VGS - Volts 0.8 VSD - Volts I D - Amperes 12 10 8 6 C iss 1,000 C oss 100 4 2 Crss 10 0 0 10 20 30 40 50 60 70 0 5 10 15 20 25 30 35 40 VDS - Volts QG - NanoCoulombs Fig. 11. Maximum Transient Thermal Impedance Z (th)JC - ºC / W 1 0.1 0.01 0.001 0.00001 0.0001 0.001 0.01 Pulse Width - Second IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 0.1 1 IXTH2N150L Fig. 12. Forward-Bias Safe Operating Area Fig. 13. Forward-Bias Safe Operating Area @ TC = 25ºC 10 @ TC = 75ºC 10 RDS(on) Limit RDS(on) Limit 100µs 100µs 1 1 I D - Amperes I D - Amperes 1ms 10ms 100ms 0.1 1ms 10ms 0.1 DC 100ms DC TJ = 150ºC TJ = 150ºC TC = 25ºC Single Pulse TC = 75ºC Single Pulse 0.01 0.01 100 1,000 VDS - Volts © 2013 IXYS CORPORATION, All Rights Reserved 10,000 100 1,000 10,000 VDS - Volts IXYS REF: T_2N150L(4M) 12-10-13 Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics.