IXTH300N04T2

Preliminary Technical Information IXTH300N04T2 TrenchT2TM Power MOSFET VDSS ID25 = 40V = 300A Ω ≤ 2.5mΩ RDS(on) N-Channel Enhancement Mode Avalanche Rated TO-247 Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 175°C 40 V VDGR TJ = 25°C to 175°C, RGS = 1MΩ 40 V G VGSM Transient ± 20 V ID25 TC = 25°C 300 A ILRMS Lead Current Limit, RMS 160 A IDM TC = 25°C, pulse width limited by TJM 900 A IA TC = 25°C 100 A EAS TC = 25°C 600 mJ PD TC = 25°C 480 W z z -55 ... +175 °C TJM 175 °C Tstg -55 ... +175 °C 300 260 °C °C 1.13 / 10 Nm/lb.in. 6 g TJ TL Tsold 1.6mm (0.062in.) from case for 10s Plastic body for 10 seconds Md Mounting torque Weight D (TAB) S G = Gate S = Source D = Drain TAB = Drain Features z z z International standard package 175°C Operating Temperature High current handling capability Avalanche Rated Low RDS(on) Advantages z z z Easy to mount Space savings High power density Applications Symbol Test Conditions (TJ = 25°C unless otherwise specified) Characteristic Values Min. Typ. Max. BVDSS VGS = 0V, ID = 250μA 40 VGS(th) VDS = VGS, ID = 250μA 2.0 IGSS VGS = ± 20V, VDS = 0V IDSS VDS = VDSS VGS = 0V RDS(on) V 4.0 V ±200 nA 5 TJ = 150°C VGS = 10V, ID = 50A, Notes 1, 2 © 2008 IXYS CORPORATION, All rights reserved μA 150 μA • Synchronous Buck Converters • High Current Switching Power Supplies • Battery Powered Electric Motors • Resonant-mode power supplies • Electronics Ballast Application • Class D Audio Amplifiers 2.5 mΩ DS100079(11/08) IXTH300N04T2 Symbol Test Conditions (TJ = 25°C, unless otherwise specified) gfs Characteristic Values Min. Typ. Max. VDS = 10V, ID = 60A, Note 1 55 Ciss Coss VGS = 0V, VDS = 25V, f = 1MHz Crss td(on) tr td(off) tf Resistive Switching Times VGS = 10V, VDS = 0.5 • VDSS, ID = 100A RG = 2Ω (External) Qg(on) Qgs VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 Qgd TO-247 (IXTH) Outline 94 S 10.7 nF 1630 pF 263 pF 22 ns 17 ns 32 ns 13 ns 145 nC 44 nC 36 nC 0.31 °C/W RthJC RthCH °C/W 0.21 Source-Drain Diode Symbol Test Conditions (TJ = 25°C, unless otherwise specified) Characteristic Values Min. Typ. Max. IS VGS = 0V ISM Repetitive, Pulse width limited by TJM VSD IF = 100A, VGS = 0V, Note 1 trr IF = 150A, VGS = 0V IRM -di/dt = 100A/μs VR = 20V QRM 300 A 1000 A 1.3 V 53 ns 1.8 A 47.7 nC 1 2 ∅P 3 e Terminals: 1 - Gate Dim. Millimeter Min. Max. A 4.7 5.3 2.2 2.54 A1 A2 2.2 2.6 b 1.0 1.4 b1 1.65 2.13 b2 2.87 3.12 C .4 .8 D 20.80 21.46 E 15.75 16.26 e 5.20 5.72 L 19.81 20.32 L1 4.50 ∅P 3.55 3.65 Q 5.89 6.40 R 4.32 5.49 2 - Drain Inches Min. Max. .185 .209 .087 .102 .059 .098 .040 .055 .065 .084 .113 .123 .016 .031 .819 .845 .610 .640 0.205 0.225 .780 .800 .177 .140 .144 0.232 0.252 .170 .216 Note 1: Pulse test, t ≤ 300μs; duty cycle, d ≤ 2%. PRELIMINARY TECHNICAL INFORMATION The product presented herein is under development. The Technical Specifications offered are derived from data gathered during objective characterizations of preliminary engineering lots; but also may yet contain some information supplied during a pre-production design evaluation. IXYS reserves the right to change limits, test conditions, and dimensions without notice. IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 IXTH300N04T2 Fig. 1. Output Characteristics @ 25ºC Fig. 2. Extended Output Characteristics @ 25ºC 350 300 VGS = 15V 10V 9V 8V 275 250 225 VGS = 15V 10V 9V 8V 300 250 ID - Amperes ID - Amperes 200 175 150 7V 125 100 6V 7V 200 150 6V 100 75 50 50 5V 25 5V 0 0 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.0 0.7 0.4 0.8 Fig. 3. Output Characteristics @ 150ºC 1.9 ID - Amperes VGS = 10V 1.7 200 7V 175 150 6V 125 100 75 1.6 I D = 300A 1.5 I D = 150A 1.4 1.3 1.2 1.1 1.0 0.9 50 5V 0.8 25 0.7 0 0.6 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 -50 -25 0 VDS - Volts 25 50 75 100 125 150 175 TJ - Degrees Centigrade Fig. 5. RDS(on) Normalized to ID = 150A Value vs. Drain Current Fig. 6. Drain Current vs. Case Temperature 180 2.2 2.1 160 VGS = 10V 2.0 External Lead Current Limit 15V - - - - 140 1.9 TJ = 175ºC 1.8 120 1.7 ID - Amperes RDS(on) - Normalized 2.4 1.8 RDS(on) - Normalized 225 2.0 2.0 VGS = 15V 10V 9V 8V 250 1.6 Fig. 4. RDS(on) Normalized to ID = 150A Value vs. Junction Temperature 300 275 1.2 VDS - Volts VDS - Volts 1.6 1.5 1.4 1.3 100 80 60 1.2 TJ = 25ºC 1.1 40 1.0 20 0.9 0 0.8 0 50 100 150 200 ID - Amperes © 2008 IXYS CORPORATION, All rights reserved 250 300 350 -50 -25 0 25 50 75 100 TC - Degrees Centigrade 125 150 175 200 IXTH300N04T2 Fig. 7. Input Admittance Fig. 8. Transconductance 180 160 160 140 120 120 g f s - Siemens ID - Amperes 140 TJ = - 40ºC 100 TJ = 150ºC 25ºC - 40ºC 80 60 25ºC 100 150ºC 80 60 40 40 20 20 0 0 3.0 3.5 4.0 4.5 5.0 5.5 6.0 0 20 40 60 VGS - Volts 80 100 120 140 160 180 ID - Amperes Fig. 9. Forward Voltage Drop of Intrinsic Diode Fig. 10. Gate Charge 10 320 VDS = 20V 9 280 I D = 150A 8 I G = 10mA 240 200 VGS - Volts IS - Amperes 7 160 120 TJ = 150ºC 6 5 4 3 80 2 TJ = 25ºC 40 1 0 0 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 0 1.3 40 60 80 100 120 140 QG - NanoCoulombs Fig. 11. Capacitance Fig. 12. Forward-Bias Safe Operating Area 100,000 1,000 RDS(on) Limit f = 1 MHz 25µs Ciss 100µs 10,000 I D - Amperes Capacitance - PicoFarads 20 VSD - Volts Coss 1,000 100 External Lead Current Limit 1ms 10 10ms 100ms TJ = 175ºC Crss DC TC = 25ºC Single Pulse 100 1 0 5 10 15 20 25 30 35 40 VDS - Volts 1 10 100 VDS - Volts IXYS reserves the right to change limits, test conditions, and dimensions. IXYS REF: T_300N04T2(V6)12-15-08-B IXTH300N04T2 Fig. 14. Resistive Turn-on Rise Time vs. Drain Current Fig. 13. Resistive Turn-on Rise Time vs. Junction Temperature 40 30 35 VGS = 10V t r - Nanoseconds 24 I D = 200A 22 20 I 18 D 30 25 20 15 14 TJ = 25ºC 10 25 35 45 55 65 75 85 95 105 115 125 40 60 80 TJ - Degrees Centigrade td(on) - - - - TJ = 125ºC, VGS = 10V 45 40 35 20 25 0 t f - Nanoseconds I D = 200A, 100A 6 8 40 tf 10 12 14 td(off) - - - - 35 VDS = 20V I D = 100A 35 20 15 25 10 20 25 16 35 45 55 95 105 115 15 125 TJ = 125ºC 24 20 40 35 12 8 140 160 ID - Amperes © 2008 IXYS CORPORATION, All rights reserved 180 200 180 VDS = 20V 175 160 I D = 100A, 200A 150 140 125 120 100 100 75 80 50 60 25 25 40 20 200 0 30 TJ = 25ºC td(off) - - - - 20 2 4 6 8 10 RG - Ohms 12 14 16 t d(off) - Nanoseconds 45 120 85 TJ = 125ºC, VGS = 10V 200 50 28 100 75 220 tf 225 t d(off) - Nanoseconds VDS = 20V 80 65 250 t f - Nanoseconds td(off) - - - - RG = 2Ω, VGS = 10V 60 55 Fig. 18. Resistive Turn-off Switching Times vs. Gate Resistance 60 tf 40 30 I D = 200A TJ - Degrees Centigrade 40 16 40 25 Fig. 17. Resistive Turn-off Switching Times vs. Drain Current 32 45 30 RG - Ohms 36 200 50 RG = 2Ω, VGS = 10V 5 15 4 180 t d(off) - Nanoseconds 55 t d(on) - Nanoseconds 80 2 160 55 65 VDS = 20V 60 140 45 75 tr 120 Fig. 16. Resistive Turn-off Switching Times vs. Junction Temperature 120 100 100 ID - Amperes Fig. 15. Resistive Turn-on Switching Times vs. Gate Resistance t r - Nanoseconds VDS = 20V = 100A 16 t f - Nanoseconds VGS = 10V TJ = 125ºC VDS = 20V 26 t r - Nanoseconds RG = 2Ω RG = 2Ω 28 IXTH300N04T2 Fig. 19. Maximum Transient Thermal Impedance 1.000 Z (th)JC - ºC / W 0.100 0.010 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 Pulse Width - Seconds IXYS reserves the right to change limits, test conditions, and dimensions. IXYS REF: T_300N04T2(V6)12-15-08-B Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. 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