IXTH34N65X2

IXTP34N65X2 IXTH34N65X2 X2-Class Power MOSFET VDSS ID25 RDS(on) = 650V = 34A  96m  N-Channel Enhancement Mode Avalanche Rated TO-220 (IXTP) Symbol Test Conditions VDSS TJ = 25C to 150C Maximum Ratings 650 V VDGR TJ = 25C to 150C, RGS = 1M 650 V VGSS Continuous 30 V VGSM Transient 40 V ID25 TC = 25C 34 A IDM TC = 25C, Pulse Width Limited by TJM 68 A IA TC = 25C 17 A EAS TC = 25C 1 J dv/dt IS  IDM, VDD  VDSS, TJ  150°C 15 V/ns PD TC = 25C 540 W -55 ... +150 C TJ TJM 150 C Tstg -55 ... +150 C 300 260 °C °C TL TSOLD Maximum Lead Temperature for Soldering 1.6 mm (0.062in.) from Case for 10s Md Mounting Torque Weight TO-220 TO-247 1.13 / 10 Nm/lb.in 3 6 g g G D S D (Tab) TO-247 (IXTH) G D S G = Gate S = Source D (Tab) D = Drain Tab = Drain Features     International Standard Packages Low RDS(ON) and QG Avalanche Rated Low Package Inductance Advantages   Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max. BVDSS VGS = 0V, ID = 1mA 650 VGS(th) VDS = VGS, ID = 250μA 3.0 IGSS VGS = 30V, VDS = 0V IDSS VDS = VDSS, VGS = 0V  V 5.0 Applications V  RDS(on) 100 nA TJ = 125C VGS = 10V, ID = 0.5 • ID25, Note 1 © 2018 IXYS CORPORATION, All Rights Reserved 10 150 High Power Density Easy to Mount Space Savings A μA 96 m     Switch-Mode and Resonant-Mode Power Supplies DC-DC Converters PFC Circuits AC and DC Motor Drives Robotics and Servo Controls DS100675D(6/18) IXTP34N65X2 IXTH34N65X2 Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max gfs VDS = 10V, ID = 0.5 • ID25, Note 1 20 RGi Gate Input Resistance Ciss Coss VGS = 0V, VDS = 25V, f = 1MHz 33 S 0.90  3000 pF 2180 pF 1.7 pF 125 490 pF pF 30 ns 48 ns 68 ns 30 ns 54 nC 15 nC 20 nC Crss Effective Output Capacitance Co(er) Co(tr) Energy related td(on) Resistive Switching Times tr td(off) tf Time related VGS = 0V VDS = 0.8 • VDSS VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 RG = 10 (External) Qg(on) Qgs VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 Qgd 0.23 C/W RthJC RthCS TO-220 TO-247 C/W C/W 0.50 0.21 Source-Drain Diode Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) IS VGS = 0V ISM Characteristic Values Min. Typ. Max 34 A Repetitive, pulse Width Limited by TJM 136 A VSD IF = IS, VGS = 0V, Note 1 1.4 V trr QRM IRM IF = 17A, -di/dt = 100A/μs 390 4.2 21.8 VR = 100V ns μC A Note 1. Pulse test, t  300s, duty cycle, d 2%. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,860,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123B1 6,306,728B1 6,404,065B1 6,534,343 6,583,505 6,683,344 6,710,405B2 6,710,463 6,727,585 7,005,734B2 6,759,692 7,063,975B2 6,771,478B2 7,071,537 7,157,338B2 IXTP34N65X2 IXTH34N65X2 o o Fig. 2. Extended Output Characteristics @ TJ = 25 C Fig. 1. Output Characteristics @ TJ = 25 C 35 90 VGS = 10V 8V 30 VGS = 10V 9V 80 70 7V 8V 25 I D - Amperes I D - Amperes 60 20 15 6V 7V 50 40 30 10 6V 20 5 10 5V 5V 0 0 0 0.5 1 1.5 2 2.5 3 0 3.5 5 10 15 VDS - Volts 25 30 Fig. 4. RDS(on) Normalized to ID = 17A Value vs. Junction Temperature o Fig. 3. Output Characteristics @ TJ = 125 C 35 3.8 VGS = 10V 8V 7V 30 20 VDS - Volts VGS = 10V 3.4 I D - Amperes RDS(on) - Normalized 3.0 25 6V 20 15 10 2.6 I D = 34A 2.2 1.8 I D = 17A 1.4 1.0 5V 5 0.6 4V 0.2 0 0 3.8 1 2 3 4 5 7 8 -50 9 -25 0 25 50 75 100 125 VDS - Volts TJ - Degrees Centigrade Fig. 5. RDS(on) Normalized to ID = 17A Value vs. Drain Current Fig. 6. Normalized Breakdown & Threshold Voltages vs. Junction Temperature 1.3 150 VGS = 10V 3.4 BVDSS / VGS(th) - Normalized 1.2 o TJ = 125 C 3.0 RDS(on) - Normalized 6 2.6 2.2 1.8 o TJ = 25 C 1.4 BVDSS 1.1 1.0 0.9 0.8 VGS(th) 0.7 1.0 0.6 0.6 0 10 20 30 40 50 I D - Amperes © 2018 IXYS CORPORATION, All Rights Reserved 60 70 80 -60 -40 -20 0 20 40 60 80 TJ - Degrees Centigrade 100 120 140 160 IXTP34N65X2 IXTH34N65X2 Fig. 8. Input Admittance Fig. 7. Maximum Drain Current vs. Case Temperature 40 60 35 30 50 25 40 I D - Amperes I D - Amperes o 20 15 TJ = 125 C o 25 C o - 40 C 30 20 10 10 5 0 0 -50 -25 0 25 50 75 100 125 150 3.5 4.0 4.5 5.0 TC - Degrees Centigrade Fig. 9. Transconductance 60 5.5 6.0 6.5 7.0 7.5 VGS - Volts Fig. 10. Forward Voltage Drop of Intrinsic Diode 100 o TJ = - 40 C 50 80 25 C 40 I S - Amperes g f s - Siemens o o 125 C 30 60 40 o TJ = 125 C 20 o TJ = 25 C 20 10 0 0 0 10 20 30 40 50 0.4 60 0.5 0.6 0.7 I D - Amperes 0.8 0.9 1.0 1.1 VSD - Volts Fig. 12. Capacitance Fig. 11. Gate Charge 10 100,000 VDS = 325V I D = 17A I G = 10mA Capacitance - PicoFarads VGS - Volts 8 6 4 2 10,000 Ciss 1,000 Coss 100 10 f = 1 MHz 0 Crss 1 0 5 10 15 20 25 30 35 40 45 50 55 QG - NanoCoulombs IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 1 10 100 VDS - Volts 1000 IXTP34N65X2 IXTH34N65X2 Fig. 13. Output Capacitance Stored Energy Fig. 14. Forward-Bias Safe Operating Area 100 30 25μs 25 100μs I D - Amperes EOSS - MicroJoules RDS(on) Limit 10 20 15 1 10 o TJ = 150 C 5 1ms o TC = 25 C Single Pulse 0.1 0 0 100 200 300 400 500 10 600 100 1,000 VDS - Volts VDS - Volts Fig. 15. Maximum Transient Thermal Impedance 1 Z(th)JC - K / W 0.1 0.01 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 Pulse Width - Seconds © 2018 IXYS CORPORATION, All Rights Reserved IXYS REF: T_34N65X2 (X5-S602) 1-06-16 IXTP34N65X2 IXTH34N65X2 TO-220 Outline 1 - Gate 2,4 - Drain 3 - Source TO-247 Outline 1 - Gate 2,4 - Drain 3 - Source IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. 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