IXTH360N055T2

Preliminary Technical Information IXTH360N055T2 IXTT360N055T2 TrenchT2TM Power MOSFET VDSS ID25 RDS(on) = 55V = 360A Ω ≤ 2.4mΩ N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode TO-247 (IXTH) Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 175°C 55 V VDGR TJ = 25°C to 175°C, RGS = 1MΩ 55 V VGSM Transient ± 20 V ID25 TC = 25°C (Chip Capability) 360 A G ILRMS Lead Current Limit, RMS 160 A IDM TC = 25°C, Pulse Width Limited by TJM 900 A IA TC = 25°C 180 A EAS TC = 25°C 960 mJ PD TC = 25°C 935 W -55 ... +175 °C TJM 175 °C Tstg -55 ... +175 °C 300 260 °C °C 1.13 / 10 Nm/lb.in. 6 4 g g TJ TL Tsold 1.6mm (0.062in.) from Case for 10s Plastic Body for 10 seconds Md Mounting Torque (TO-247) Weight TO-247 TO-268 Symbol Test Conditions (TJ = 25°C Unless Otherwise Specified) BVDSS Characteristic Values Min. Typ. Max. VGS = 0V, ID = 250μA VGS(th) VDS = VGS, ID = 250μA IGSS VGS = ± 20V, VDS = 0V IDSS VDS = VDSS, VGS= 0V 55 2.0 RDS(on) VGS = 10V, ID = 100A, Note 1 TO-268 (IXTT) G S D (TAB) G = Gate S = Source D = Drain TAB = Drain Features z International Standard Package 175°C Operating Temperature z High Current Handling Capability z Avalanche Rated z Fast Intrinsic Diode z Low RDS(on) z V 4.0 V ±200 nA 300 μA 2.4 mΩ z z z Easy to Mount Space Savings High Power Density Applications z z z © 2009 IXYS CORPORATION, All Rights Reserved (TAB) S Advantages 10 μA TJ = 150°C D DC/DC Converters and Off-line UPS Primary- Side Switch High Current Switching Applications DS100169A(8/09) IXTH360N055T2 IXTT360N055T2 Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) gfs Characteristic Values Min. Typ. Max. VDS = 10V, ID = 60A, Note 1 65 110 S 20 nF 2650 pF 480 pF 1.6 Ω 30 ns 23 ns 62 ns 56 ns 330 nC 76 nC 87 nC Ciss Coss VGS = 0V, VDS = 25V, f = 1MHz Crss RGi Gate Input Resistance td(on) Resistive Switching Times tr VGS = 10V, VDS = 0.5 • VDSS, ID = 100A td(off) RG = 2Ω (External) tf Qg(on) Qgs VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 Qgd 0.16 °C/W RthJC RthCH TO-247 (IXTH) Outline TO-247 °C/W 0.21 Source-Drain Diode Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max. IS VGS = 0V ISM Repetitive, Pulse Width Limited by TJM VSD IF = 100A, VGS = 0V, Note 1 trr IF = 150A, VGS = 0V IRM QRM 360 A 1440 A 1.3 V 78 -di/dt = 100A/μs VR = 27V 1 2 ∅P 3 e Terminals: 1 - Gate 3 - Source Dim. Millimeter Min. Max. A 4.7 5.3 2.2 2.54 A1 A2 2.2 2.6 b 1.0 1.4 b1 1.65 2.13 b2 2.87 3.12 C .4 .8 D 20.80 21.46 E 15.75 16.26 e 5.20 5.72 L 19.81 20.32 L1 4.50 ∅P 3.55 3.65 Q 5.89 6.40 R 4.32 5.49 S 6.15 BSC 2 - Drain Tab - Drain Inches Min. Max. .185 .209 .087 .102 .059 .098 .040 .055 .065 .084 .113 .123 .016 .031 .819 .845 .610 .640 0.205 0.225 .780 .800 .177 .140 .144 0.232 0.252 .170 .216 242 BSC TO-268 Outline ns 4.2 A 164 nC Note 1. Pulse test, t ≤ 300μs; duty cycle, d ≤ 2%. PRELIMINARY TECHNICAL INFORMATION The product presented herein is under development. The Technical Specifications offered are derived from data gathered during objective characterizations of preliminary engineering lots; but also may yet contain some information supplied during a pre-production design evaluation. IXYS reserves the right to change limits, test conditions, and dimensions without notice. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 IXTH360N055T2 IXTT360N055T2 Fig. 2. Extended Output Characteristics @ 25ºC Fig. 1. Output Characteristics @ 25ºC 350 350 VGS = 15V 10V 9V 300 8V 250 250 7V ID - Amperes ID - Amperes VGS = 10V 8V 7V 300 200 150 6V 100 6V 200 150 5V 100 5V 50 50 4V 4V 0 0 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.0 1.0 2.0 3.0 VDS - Volts Fig. 3. Output Characteristics @ 150ºC 7.0 8.0 VGS = 10V 8V 1.8 7V R DS(on) - Normalized ID - Amperes 6.0 2.0 VGS = 15V 10V 9V 250 200 6V 150 5V 100 50 I D = 300A 1.6 I D = 180A 1.4 1.2 1.0 0.8 4V 0 0.6 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 -50 1.8 -25 0 25 VDS - Volts 50 75 100 125 150 175 TJ - Degrees Centigrade Fig. 5. RDS(on) Normalized to ID = 180A Value vs. Drain Current Fig. 6. Drain Current vs. Case Temperature 180 2.2 External Lead Current Limit 160 2.0 TJ = 175ºC 1.8 140 120 1.6 ID - Amperes R DS(on) - Normalized 5.0 Fig. 4. RDS(on) Normalized to ID = 180A Value vs. Junction Temperature 350 300 4.0 VDS - Volts VGS = 10V 1.4 15V - - - - - 1.2 100 80 60 1.0 40 TJ = 25ºC 0.8 20 0.6 0 0 50 100 150 200 ID - Amperes © 2009 IXYS CORPORATION, All Rights Reserved 250 300 350 -50 -25 0 25 50 75 100 TC - Degrees Centigrade 125 150 175 IXTH360N055T2 IXTT360N055T2 Fig. 7. Input Admittance Fig. 8. Transconductance 240 200 TJ = - 40ºC 180 200 160 25ºC g f s - Siemens ID - Amperes 140 120 100 80 TJ = 150ºC 25ºC - 40ºC 60 40 160 150ºC 120 80 40 20 0 0 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 0 20 40 60 80 VGS - Volts Fig. 9. Forward Voltage Drop of Intrinsic Diode 120 140 160 180 200 220 Fig. 10. Gate Charge 10 300 VDS = 27.5V 9 250 I D = 180A 8 I G = 10mA 7 200 VGS - Volts IS - Amperes 100 ID - Amperes 150 TJ = 150ºC 100 6 5 4 3 TJ = 25ºC 50 2 1 0 0 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 0 50 100 VSD - Volts 150 200 250 300 350 QG - NanoCoulombs Fig. 11. Capacitance Fig. 12. Forward-Bias Safe Operating Area 1,000 100,000 RDS(on) Limit f = 1 MHz 10,000 100µs External Lead Current Limit 100 ID - Amperes Capacitance - PicoFarads 25µs Ciss Coss 1ms 10ms 10 1,000 100ms DC TJ = 175ºC Crss TC = 25ºC Single Pulse 100 1 0 5 10 15 20 25 30 35 40 VDS - Volts 1 10 100 VDS - Volts IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS REF: T_360N055T2(V8)7-14-09 IXTH360N055T2 IXTT360N055T2 Fig. 13. Resistive Turn-on Rise Time vs. Junction Temperature Fig. 14. Resistive Turn-on Rise Time vs. Drain Current 70 70 RG = 2Ω , VGS = 10V RG = 2Ω , VGS = 10V VDS = 27.5V 60 50 t r - Nanoseconds t r - Nanoseconds 60 40 30 20 I D = 100A I D VDS = 27.5V 50 TJ = 125ºC 40 30 = 200A 20 10 TJ = 25ºC 10 0 25 35 45 55 65 75 85 95 105 115 40 125 60 80 100 TJ - Degrees Centigrade Fig. 15. Resistive Turn-on Switching Times vs. Gate Resistance td(on) - - - - VDS = 27.5V 90 I D = 200A 300 80 250 70 I D = 100A 200 60 150 50 100 40 50 30 0 80 3 4 5 6 7 8 9 10 11 12 13 14 td(off) - - - - VDS = 27.5V 90 I D = 100A 60 80 50 70 I D = 200A 40 50 20 15 25 35 45 55 RG = 2Ω, VGS = 10V 95 105 115 40 125 110 55 80 TJ = 25ºC, 125ºC 50 70 45 60 40 50 35 ID - Amperes © 2009 IXYS CORPORATION, All Rights Reserved 180 40 200 t d(off) - Nanoseconds 90 160 tf 400 TJ = 125ºC, VGS = 10V 100 60 140 500 450 450 td(off) - - - - 400 VDS = 27.5V 350 I D = 100A, 200A 350 300 300 250 250 200 200 150 150 100 100 50 50 0 0 2 3 4 5 6 7 8 9 RG - Ohms 10 11 12 13 14 15 t d(off) - Nanoseconds VDS = 27.5V 65 t f - Nanoseconds td(off) - - - - t f - Nanoseconds 70 120 85 500 120 tf 100 75 Fig. 18. Resistive Turn-off Switching Times vs. Gate Resistance 75 80 65 TJ - Degrees Centigrade Fig. 17. Resistive Turn-off Switching Times vs. Drain Current 60 60 30 RG - Ohms 40 100 RG = 2Ω, VGS = 10V 70 20 2 200 t d(off) - Nanoseconds 350 180 110 tf 100 t f - Nanoseconds tr TJ = 125ºC, VGS = 10V 160 90 110 t d(on) - Nanoseconds t r - Nanoseconds 120 400 140 Fig. 16. Resistive Turn-off Switching Times vs. Junction Temperature 500 450 120 ID - Amperes IXTH360N055T2 IXTT360N055T2 Fig. 19. Maximum Transient Thermal Impedance 1.00 Fig. 19. Maximum Transient Thermal Impedance 0.20 Z (th)JC - ºC / W 0.10 0.01 0.0001 0.001 0.01 0.1 1 10 Pulse Width - Seconds IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS REF: T_360N055T2(V8)7-14-09 Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. 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