IXTH36P10

Advance Technical Information Standard Power MOSFET IXTH 36P10 P-Channel Enhancement Mode Avalanche Rated RDS(on) Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C -100 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ -100 V VGS Continuous ±20 V VGSM Transient ±30 V ID25 TC = 25°C IDM TC = 25°C, pulse width limited by TJ IAR -36 A -144 A TC = 25°C -36 A EAR TC = 25°C 30 mJ PD TC = 25°C 180 W -55 ... +150 °C TJ TJM 150 °C Tstg -55 ... +150 °C 300 °C TL Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s Md Mounting torque VDSS ID25 1.13/10 Nm/lb.in. 6 Weight g TO-247 AD D (TAB) G = Gate, S = Source, Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. VDSS V GS = 0 V, ID = -250 µA -100 VGS(th) V DS = VGS, ID = -250 µA -3.0 IGSS V GS = ±20 VDC, VDS = 0 IDSS V DS = 0.8 VDSS V GS = 0 V RDS(on) V GS = -10 V, ID = 0.5 ID25 © 2002 IXYS All rights reserved TJ = 25°C TJ = 125°C V -5.0 V ±100 nA -25 -1 µA mA 75 mΩ D = Drain, TAB = Drain Features • International standard package JEDEC TO-247 AD • Low RDS (on) HDMOSTM process • • • Symbol = -100 V = -36 A Ω = 75 mΩ Rugged polysilicon gate cell structure Unclamped Inductive Switching (UIS) rated Low package inductance (