IXTH36P15P

PolarPTM Power MOSFETs IXTA36P15P IXTP36P15P IXTQ36P15P IXTH36P15P P-Channel Enhancement Mode Avalanche Rated TO-263 AA (IXTA) VDSS = = ID25 RDS(on) ≤ TO-220AB (IXTP) TO-3P (IXTQ) G S G D (Tab) G D DS D (Tab) Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C - 150 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ - 150 V VGSS Continuous ±20 V VGSM Transient ±30 V ID25 TC = 25°C - 36 A IDM TC = 25°C, Pulse Width Limited by TJM - 90 A IA EAS TC = 25°C TC = 25°C - 36 1.5 A J dv/dt IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C 10 V/ns PD TC = 25°C 300 W -55 ... +150 150 -55 ... +150 °C °C °C 300 260 °C °C 1.13/10 Nm/lb.in. 10..65/2.2..14.6 N/lb. 2.5 3.0 5.5 6.0 g g g g TL TSOLD 1.6mm (0.062 in.) from Case for 10s Plastic Body for 10s Md Mounting Torque (TO-3P,TO-220 & TO-247) FC Mounting Force (TO-263) Weight TO-263 TO-220 TO-3P TO-247 G Characteristic Values Min. Typ. Max. VGS = 0V, ID = - 250 μA - 150 VGS(th) VDS = VGS, ID = - 250μA - 2.5 IGSS VGS = ±20V, VDS = 0V ±100 nA IDSS VDS = VDSS, VGS = 0V -10 μA - 250 μA RDS(on) VGS = -10V, ID = 0.5 • ID25, Note 1 © 2013 IXYS CORPORATION, All Rights Reserved V - 4.5 V D S D (Tab) D = Drain Tab = Drain Features z International Standard Packages Rugged PolarPTM Process z Avalanche Rated z Low Package Inductance z Fast Intrinsic Diode z Dynamic dv/dt Rated z Low RDS(ON) and QG z z Low Drain-to-Tab Capacitance Advantages z z BVDSS TJ = 125°C D (Tab) G = Gate S = Source z Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) S TO-247 (IXTH) Symbol TJ TJM Tstg - 150V - 36A Ω 110mΩ Easy to Mount Space Savings High Power Density Applications z z z z z High-Side Switching Push Pull Amplifiers DC Choppers Automatic Test Equipment Current Regulators 110 mΩ DS99791D(01/13) IXTA36P15P IXTP36P15P IXTQ36P15P IXTH36P15P Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max. gfs 11 VDS = -10V, ID = 0.5 • ID25, Note 1 Ciss Coss 19 S 3100 pF 610 pF 100 pF VGS = 0V, VDS = - 25V, f = 1MHz Crss td(on) tr td(off) tf Resistive Switching Times VGS = -10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 RG = 3.3Ω (External) Qg(on) Qgs VGS = -10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 Qgd 21 ns 31 ns 36 ns 15 ns 55 nC 20 nC 18 nC 0.42 °C/W RthJC RthCS (TO-3P, TO-247) (TO-220) 0.21 0.50 °C/W °C/W Source-Drain Diode Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max. IS VGS = 0V - 36 A ISM Repetitive, Pulse Width Limited by TJM -140 A VSD IF = -18A, VGS = 0V, Note 1 - 3.3 V trr QRM IRM IF = -18A, -di/dt = -100A/μs VR = - 75V, VGS = 0V Note 1: Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%. 228 2.0 -17.6 ns μC A IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,860,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 IXTA36P15P IXTH36P15P TO-263 Outline IXTP36P15P IXTQ36P15P TO-220 Outline 1 - Gate 2,4 - Drain 3 - Source Pins: 1 - Gate 2 - Drain 3 - Source TO-247 Outline TO-3P Outline 1 2 ∅P 3 e Pins: Dim. Pins: 1 - Gate 3 - Source 2,4 - Drain © 2013 IXYS CORPORATION, All Rights Reserved 1 - Gate 3 - Source 2 - Drain Millimeter Min. Max. A 4.7 5.3 2.2 2.54 A1 A2 2.2 2.6 b 1.0 1.4 b1 1.65 2.13 b2 2.87 3.12 C .4 .8 D 20.80 21.46 E 15.75 16.26 e 5.20 5.72 L 19.81 20.32 L1 4.50 ∅P 3.55 3.65 Q 5.89 6.40 R 4.32 5.49 Inches Min. Max. .185 .209 .087 .102 .059 .098 .040 .055 .065 .084 .113 .123 .016 .031 .819 .845 .610 .640 0.205 0.225 .780 .800 .177 .140 .144 0.232 0.252 .170 .216 IXTA36P15P IXTP36P15P IXTQ36P15P IXTH36P15P Fig. 2. Extended Output Characteristics @ T J = 25ºC Fig. 1. Output Characteristics @ T J = 25ºC -100 -40 VGS = -10V - 9V -35 VGS = -10V -90 -80 -30 - 9V - 8V ID - Amperes ID - Amperes -70 -25 -7V -20 -15 - 8V -50 -40 - 7V -30 - 6V -10 -60 -20 - 6V -5 -10 - 5V 0 0 0.0 -0.5 -1.0 -1.5 -2.0 -2.5 -3.0 -3.5 -4.0 -4.5 -5.0 0 -5 -10 -15 -20 -25 -30 VDS - Volts VDS - Volts Fig. 3. Output Characteristics @ T J = 125ºC Fig. 4. RDS(on) Normalized to ID = -18A Value vs. Junction Temperature -40 2.4 VGS = -10V - 9V -35 VGS = -10V ID - Amperes -30 R DS(on) - Normalized 2.0 - 8V -25 - 7V -20 -15 - 6V I D = - 36A 1.6 I D = -18A 1.2 -10 0.8 -5 - 5V 0.4 0 0 -1 -2 -3 -4 -5 -6 -7 -8 -50 -9 -25 0 VDS - Volts 25 50 75 100 125 150 125 150 TJ - Degrees Centigrade Fig. 5. RDS(on) Normalized to ID = -18A Value vs. Drain Current Fig. 6. Maximum Drain Current vs. Case Temperature -40 3.0 VGS = -10V -35 2.6 TJ = 125ºC ID - Amperes R DS(on) - Normalized -30 2.2 1.8 1.4 -25 -20 -15 TJ = 25ºC -10 1.0 -5 0 0.6 0 -10 -20 -30 -40 -50 -60 -70 -80 -90 ID - Amperes IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. -50 -25 0 25 50 75 TC - Degrees Centigrade 100 IXTA36P15P IXTH36P15P Fig. 7. Input Admittance IXTP36P15P IXTQ36P15P Fig. 8. Transconductance -65 35 -55 30 TJ = - 40ºC TJ = - 40ºC 25ºC 125ºC 25 25ºC g f s - Siemens ID - Amperes -45 -35 -25 20 125ºC 15 10 -15 5 -5 0 -3.5 -4.0 -4.5 -5.0 -5.5 -6.0 -6.5 -7.0 -7.5 -8.0 0 -8.5 -10 -20 -30 VGS - Volts Fig. 9. Forward Voltage Drop of Intrinsic Diode -9 -80 -8 -70 -7 VGS - Volts -90 IS - Amperes -10 -60 -50 TJ = 125ºC -70 -80 VDS = - 75V I D = -18A I G = -1mA -6 -5 -4 -20 -2 -10 -1 0 -1.0 -1.5 -2.0 -2.5 -3.0 -3.5 -4.0 0 -4.5 5 10 15 20 25 30 35 40 45 50 55 QG - NanoCoulombs VSD - Volts Fig. 12. Forward-Bias Safe Operating Area Fig. 11. Capacitance - 100 10,000 RDS(on) Limit Ciss 25µs TJ = 150ºC 100µs TC = 25ºC Single Pulse 1,000 ID - Amperes Capacitance - PicoFarads -60 -3 TJ = 25ºC -30 0 -0.5 -50 Fig. 10. Gate Charge -100 -40 -40 ID - Amperes Coss 1ms - 10 100 10ms Crss f = 1 MHz DC 10 0 -5 -10 -15 -20 -25 VDS - Volts © 2013 IXYS CORPORATION, All Rights Reserved -30 -35 -40 -1 - 10 - 100 VDS - Volts 100ms - 1000 IXTA36P15P IXTP36P15P IXTQ36P15P IXTH36P15P Fig. 13. Maximum Transient Thermal Impedance Z (th)JC - ºC / W 1 0.1 0.01 0.0001 0.001 0.01 0.1 1 10 Pulse Width - Seconds IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS REF: T_36P15P(B5)3-26-08-B Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics.